Magnetic Nanofluidics ME342 Design Project Update 2 Abhishek Dhanda Kwan-Kyu Park Michael Pihulic Katherine Tsai July 13, 2006.

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Magnetic Nanofluidics ME342 Design Project Update 2 Abhishek Dhanda Kwan-Kyu Park Michael Pihulic Katherine Tsai July 13, 2006

Progress: Equipment Training Completed  Kwan-Kyu: Thermco1,2,poly, P-5000  Katherine: Tylan1-6, EValign, EVbond*  Mike: Wafer Saw, EValign, EVbond* Pending  SEM, E-beam, PMMA station, Metalica, wbgeneral

Progress: Masks Set 1: Microchannels (Etch1, Metal1, Back, Pyrex) H = 10 um, 5 um W = 30 um, 10 um, 5 um, zigzag L = 475 um um Set 2: Nanochannels (Ebeam, Etch2, Metal2, Back, Pyrex) H = 500 nm, 100 nm W = 1 um, 500 nm, 100 nm L = 30 um

Mask Set 1: Microchannels Revisions since 6/10/06: Reduced die size by bending microchannels Increased number of devices per wafer Rearranged layout to facilitate wafer dicing Added labels to each die Added trenches around metal labels

Mask Set 1: Microchannels

ProcessTargetRecipe Estimated SettingTool 1Diffusion Cleaning Std. Clean30-40minWbdiff 2Oxide Growth500nmWet mintylan 1,2 3Diffusion Cleaning Std. Clean30-40minWbdiff 4Polysilicon deposition100nm,500nm Thermcopoly 5E-beam Lithography100nm 2% PMAA 45minPMMA spinning tool 6Si Etch100nm,500nmSMOODEEP5-25 secSTS Etch 7Resist Strip strip/clean20-30minwbnonmetal 8Lithography1um SPR3612#1 Front Etch45minsvgcoat/karl-suss/svgdevel 9Si Etch100nm,500nmSMOODEEP5-25 secSTS Etch 10Resist Strip strip/clean20-30minwbnonmetal 11Diffusion Cleaning Std. Clean30-40minWbdiff 12Oxide Growth10nmWet 11001mintylan 1,2 13Lithography7um SPR220#2 Backside2-3hoursvgcoat/karl-suss/svgdevel 14Si Etch400umDEEP100minSTS Etch 15Oxide Etch500nm 3minP Resist Strip strip/clean20-30minDrytek2 17Lithography1.6um SPR3612#3 Metal45minsvgcoat/karl-suss/svgdevel 18Au(Cr) Deposition100nm,500nmSputtering3hourMetallica 19Lift off 10minWbgeneral 21Anodic Bonding 10minevalign/evbond 22Lithography7um SPR220#4 Pyrex Etch 23Pyrex Etch300um 24Resist Strip Std. Clean wbgeneral 25Wafer Saw wafersaw

Progress Processing: Steps 1 (wbdiff) & 2 (tylan)  Purpose: Etch stop for nanochannel definition  Time = 38 min 23 sec; Temp = 1100 C  t ox (target) = 0.5 µm  1st batch, 4 wafers Tylan1: t ox (measured) =~0.46 +/ µm (3  )  2nd batch, 4 wafers Tylan2: t ox (measured) =~0.5 +/ µm (3  )

Progress Materials purchased  Particles ( 6 µm fluorescent, magnetic particles 250 nm magnetic particles 15 nm fluorescent particles  Si wafers for nanochannels (SNF stockroom) 4 for 500 nm channels 4 for 100 nm channels  SOI wafers for microchannels (Pruitt inventory) 1 for 5 um channels 1 for 10 um channels

Emergent Problems Progress delay  SNF mask writer down for repairs (Back-up plan: mask UC Berkeley)  Coral shut down on 7/11/06  ThermcoPoly shut down as of 7/12/06 Resource  Metal tweezers out of stock until August Process undefined  Litho on pyrex wafer - Alignment issues?  Selective etch for pyrex? Etc.  Need to buy more SOIs? (budget?)  Testing setup

Future Work Current week  Revise mask set 1 (microchannels) if necessary. Submit to Berkeley  Finish mask set 2 (nanochannels)  Poly-Si deposition (nanochannels) Next week  Masks arrive  E-beam (nanochannels)  Litho (microchannels)