SIMULATION OF THE GROWTH OF A HETEROEPITAXIAL FILM ON A (111) ORIENTED SUBSTRATE

Film →Ge 0.5 Si 0.5 Material properties→ Isotropic E = GPa ν = Lattice parameter, a 0 = 5.54 Å Slip system → {111} Substrate → Si Material properties→ Isotropic E = GPa ν = Lattice parameter, a 0 = 5.43 Å Slip system → {111} Edge of the domain Film Substrate 2 1 Mesh size b  b Boundary Condition Imposing Symmetry U2 = 0 U1 = 0 Region where thermal strains are imposed to simulate an epitaxial film with a lattice mismatch Compressive region Tensile region SYSTEM AND BOUNDARY CONDITIONS b = 3.84 Å [110] [111]

σ XX CONTOURS OF HETEROEPITAXIAL FILM ON SUBSTRATE Film Substrate Mesh size b  b Edge of the domain Tensile Stresses Compressive stresses  0.6  1.2  1.8  2.4  2.7 Interfacial plane (111) 100b = 384 Å 70b = Å Film thickness Stress contour values in GPa

1 b

2 b

3 b

4 b

5 b

6 b

7 b

8 b

9 b

Substrate energy goes upto 30% of total energy on growth film to 10b thickness 10 b