Development of Ge JFETs for Deep-Cryogenic Preamplifiers SPIE - Astronomical Telescopes and Instrumentation Hawai’i, August 2002.

Slides:

Advertisements

Similar presentations

The Thermostat How it works and why.. The thermostat uses many instruments to measurer settings and parameters. One thing that makes a thermostat operate.

Advertisements

J-FET (Junction Field Effect Transistor) Introduction The field-effect transistor (FET) controls the current between two points but does so differently.

NAME OF FACULTY : MR. Harekrushna Avaiya DEPARTMENT: E.C. (PPI-1ST) BASIC ELECTRONICS.

1 Chapter 6 Low-Noise Design Methodology. 2 Low-noise design from the system designer’s viewpoint is concerned with the following problem: Given a sensor.

1 Chapter 5 Sensors and Detectors A detector is typically the first stage of a communication system. Noise in this stage may have significant effects on.

The metal-oxide field-effect transistor (MOSFET)

Power Diodes for Cryogenic Operation PESC 2003 Acapulco, Mexico, June 2003.

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Microelectronics Circuit Analysis and Design Donald A. Neamen

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

POWER TRANSISTOR – MOSFET Parameter 2N6757 2N6792 VDS(max) (V)

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -21 Field Effect Transistor.

Introduction to FET’s Current Controlled vs Voltage Controlled Devices.

Power FETs are an integral power device, it’s ability to switch from on-state to off-state is crucial in quick switching devices. All the while also having.

Kit Building Class Lesson 7Page 1 The JFET The Junction Field Effect Transistor is another type of transistor, which can be used in the same kinds of circuits.

Field-Effect Transistor

Junction Field Effect Transistor

Field-Effect Transistors

FET ( Field Effect Transistor)

Chapter 5: Field–Effect Transistors

CHAPTER 7 Junction Field-Effect Transistors. OBJECTIVES Describe and Analyze: JFET theory JFETS vs. Bipolars JFET Characteristics JFET Biasing JFET Circuits.

Power Semiconductor Devices for Low-Temperature Environments Space Power Workshop April 2004, Manhattan Beach, California.

المملكة العربية السعودية وزارة التعليم العالي - جامعة أم القرى كلية الهندسة و العمارة الإسلامية قسم الهندسة الكهربائية ELECTRONIC DEVICES K INGDOM.

EZ-COURSEWARE State-of-the-Art Teaching Tools From AMS Teaching Tomorrow’s Technology Today.

Field Effect Transistors Next to the bipolar device that has been studied thus far the Field Effect Transistor is very common in electronic circuitry,

Power Semiconductor Devices for Low-Temperature Environments - II Space Power Workshop April 2005, Manhattan Beach, California.

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

Silicon Sensor with Readout ASICs for EXAFS Spectroscopy Gianluigi De Geronimo, Paul O’Connor Microelectronics Group, Instrumentation Division, Brookhaven.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Chapter 4 Logic Families.

DMT121 – ELECTRONIC DEVICES

المملكة العربية السعودية وزارة التعليم العالي - جامعة أم القرى كلية الهندسة و العمارة الإسلامية قسم الهندسة الكهربائية ELECTRONIC DEVICES K INGDOM.

Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado.

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

SiGe Semiconductor Devices for Cryogenic Power Electronics

National Aeronautics and Space Administration 1 The Effects of Extreme Ambient Temperature on Operation of Commercial-Off-the-Shelf Silicon-Germanium,

EXAMPLE 11.1 OBJECTIVE Solution Comment

Field Effect Transistors

NEPP - April/May 2002 Semiconductor Device Options for Low-Temperature Electronics R. K. Kirschman, R. R. Ward and W. J. Dawson GPD Optoelectronics Corp.,

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

CHAP3: MOS Field-Effect Transistors (MOSFETs)

© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 7-1 Electronics Principles & Applications Eighth Edition Chapter 7 More About Small-Signal.

Junction Field Effect Transistor

Schottky Barrier Diode One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky.

Impedance Matching Units. Maximum Power Transfer Theorem As we have seen previously the output of a power amplifier must transfer as much power as possible.

Ge Semiconductor Devices for Cryogenic Power Electronics - V

Electronics Principles & Applications Fifth Edition Chapter 7 More About Small-Signal Amplifiers ©1999 Glencoe/McGraw-Hill Charles A. Schuler.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

EE415 VLSI Design THE INVERTER [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Abstract The purpose of this project is to design a high-performance FPGA-controlled amplifier for Teradyne Corporation. This will constitute Phase IV.

SMALL SIGNAL FET (Field– Effect Transistors) AMPLIFIER 1.Introduction/Basic 2.FET Small-Signal Model 3.Fixed-Bias Configuration 4.Self-Bias Configuration.

Farzana R. ZakiCSE 177/ EEE 1771 Lecture – 19. Farzana R. ZakiCSE 177/ EEE 1772 MOSFET Construction & operation of Depletion type MOSFET Plotting transfer.

EMT 112 / 4 ANALOGUE ELECTRONICS Self-Reading Power Transistor – BJT & MOSFET.

CHAPTER 5 FIELD EFFECT TRANSISTORS(part a) (FETs).

ECE 333 Linear Electronics

Field Effect Transistors

Barrel EM Calorimeter Preamp / Shaper Update Mitch Newcomer, Andrew Townley Prepared for Munich Liquid Argon Week 2011.

Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH

MOSFET V-I Characteristics Vijaylakshmi.B Lecturer, Dept of Instrumentation Tech Basaveswar Engg. College Bagalkot, Karnataka IUCEE-VLSI Design, Infosys,

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 9.

SILVER OAK COLLEGE OF ENGG. & TECHNOLOGY  SUB – Electronics devices & Circuits  Topic- JFET  Student name – Kirmani Sehrish  Enroll. No

BJT transistors FET ( Field Effect Transistor) 1. Unipolar device i. e. operation depends on only one type of charge carriers (h or e) 2. Voltage controlled.

CHAPTER 4 :JFET Junction Field Effect Transistor.

Transistors Different types and sizes BJT (PNP) Electrical Diagram First Transistor Modern Electronics FET and BJT Transistor.

Power MOSFET Pranjal Barman.

POWER TRANSISTOR – MOSFET Parameter 2N6757 2N6792 VDS(max) (V)

Instrumentation & Power Electronic Systems

Goddard Space Flight Center

Electric Current.

Presentation transcript:

Development of Ge JFETs for Deep-Cryogenic Preamplifiers SPIE - Astronomical Telescopes and Instrumentation Hawai’i, August 2002

R. R. Ward and R. K. Kirschman GPD Optoelectronics Corp., Salem, New Hampshire, U.S.A. M. D. Jhabvala NASA Goddard Space Flight Center, Greenbelt, Maryland, U.S.A. R. S. Babu Ball Aerospace & Technologies Corp., Boulder, Colorado, U.S.A. D. V. Camin and V. Grassi Physics Department of the University and INFN, Milan, Italy

ASTRO-E Preamp Assembly ~1.2 K ~120 K ~18 K

The Problem Sensor at ~1 K, Preamplifier at ~100 K Long Wires –Parasitic capacitance and resistance –Microphonics –EMI pickup Heat Transfer to Sensor Extra Power Mechanical Complexity

A Solution A Transistor That Can Operate at ~1 K

A Solution A Transistor That Can Operate at ~1 K We Proposed the Ge JFET (Junction Field-Effect Transistor)

Technical Goals for Ge JFETs Operate at Any Temperature, ~1 – 300 K Very Low Low-Frequency Noise –Equal to best Si JFETs at optimum temp (~120 K) High Input Resistance/Low Input Current Tailorable Input Capacitance Low Power Integrable Available, Standard and Custom

Why Ge? Ge JFETs Operate Well to Lowest Temperatures (~1 K) Both n-Channel and p-Channel JFETs Texas Instruments Ge JFET Ge Is an Elemental Semiconductor Ge Technology Is Sufficiently Developed

Ge JFET Cross-Section (n-channel)

~1 mm Ge JFETs

Conduction vs Temperature

DC Characteristics

DC Characteristics - 4 K

DC Characteristics

Noise Characteristics

Noise Voltage - 77 K

Noise Voltage vs Power - 77 K

Noise Voltage vs Temperature

Noise Voltage - 4 K

Summary Successfully Fabricated Ge JFETs, n- and p-Channel Provided Evaluation Ge JFETs to Potential Users DC Characteristics Good at All Temperatures down to 4 K Turn-On Threshold at 4 K (T<~20 K) Achieved Low Noise down to ~30 K Noise Higher than Desired at 4 K

Plans Adjust Parameters to Extend Low Noise to ~1 K Reduce Noise at All Cryogenic Temperatures –Match that of Si JFETs at higher temperature For Both n- and p-Channel