Carrier generation and recombination A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation.

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Presentation transcript:

Carrier generation and recombination

A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation rate. This will continue until a new equilibrium state is attained.

Heat or photons

Carrier generation and recombination

Carrier generation and recombination thermal equilibrium conditions

n type extrinsic semiconductor

Inhomogeneous doping profile creates an electric field

Time rate of change of densities thermal equilibrium conditions

Time rate of change of densities thermal equilibrium conditions “low-level injection”

Defects in the crystal Electron falls down attracting a hole The hole jumps up attracting the electron Electron falls down to defect and then falls down to the valence band. Defect energy level

Carrier generation and recombination

Hall effect + -

Hall effect – model rocket engine + -

Hall effect

Example 4.8 Consider an n- type GaAs Hall effect device with the geometry shown in the figure. Find the majority carrier concentration in the carrier mobility. The relevant numbers are:

Simple three-dimensional unit cell