Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs S. F. Yu, Ray-Ming Lin, S. J. Chang, Senior Member, IEEE, J. R. Chen, J. Y. Chu, C. T. Kuo, and Z. Y. Jiao Jeff Yang

Outline Introduction Experiment Result and Discussion Conclusion Introduction Experiment Result and Discussion Conclusion

Introduction The use of conventional MQWs results in the carriers accumulating in the last few pairs of MQWs against the p- side layer (i.e., not all MQWs would participate in carrier recombinatio n, due to the relatively low concentration and mobility of the holes) In this study, we investigated the external quantum efficiency (EQE) of blue InGaN/GaN MQWs LEDs featuring quantum barriers of various thicknesses. Furthermore, we performed a novel experiment to verify the enhanced carrier distribution in MQWs that also adopt narrow quantum barriers (NQBs). The use of conventional MQWs results in the carriers accumulating in the last few pairs of MQWs against the p- side layer (i.e., not all MQWs would participate in carrier recombinatio n, due to the relatively low concentration and mobility of the holes) In this study, we investigated the external quantum efficiency (EQE) of blue InGaN/GaN MQWs LEDs featuring quantum barriers of various thicknesses. Furthermore, we performed a novel experiment to verify the enhanced carrier distribution in MQWs that also adopt narrow quantum barriers (NQBs). 1