MOS capacitor before joining The metallic gate may be replaced with a heavily doped p+ polysilicon gate. The Fermi energy levels are approximately at.

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Presentation transcript:

MOS capacitor before joining The metallic gate may be replaced with a heavily doped p+ polysilicon gate. The Fermi energy levels are approximately at the same level.

Positive electron energy

MOS capacitor after joining Assume that there is no charge in the oxide layer

MOS capacitor energy levels

MOS capacitor p type semiconductor voltage bias effects E G V

MOS capacitor p type semiconductor voltage bias effects –battery switched G V E

MOS capacitor n type semiconductor voltage bias effects G V E

MOS capacitor n type semiconductor voltage bias effects –battery switched E G V

MOS capacitor after joining Assume that there is charge in the oxide layer

G V MOS capacitor p type semiconductor gate voltage V G = V Flatband

MOS capacitor p type semiconductor gate voltage V G = V T “threshold” G V

MOS capacitor –charge distribution..

Problem 6.1 Charge distributions are depicted in an MOS capacitor. 1) Is the semiconductor n or p type? 2) Does the bias make it an accumulation mode, depletion mode or an inversion mode?

Problem 6.1 Charge distributions are depicted in an MOS capacitor. 1) Is the semiconductor n or p type? 2) Does the bias make it an accumulation mode, depletion mode or an inversion mode?

Electric field due to charges

. MOS capacitor – changing charge distribution with changing voltage accumulation mode.

. MOS capacitor – changing charge distribution with changing voltage depletion mode.

MOS capacitor – changing charge distribution with changing voltage

definition Approximate proportion of charge located at x

Problem 6.22 Using superposition, find the dependence of the “flat bad voltage” as the charge density changes. Nonuniform charge x Change of flat band voltage Superimposition applies

Problem 6.23 Using superposition, find the dependence of the “flat bad voltage” for a particular charge density profiles.. Charges located just at the interface

Charge density is nonuniform

Problem 6.28 Consider the high-frequency capacitance- voltage relationship. Locate the inversion; threshold; depletion; flat band, and accumulation points.