5-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Five The Field-Effect Transistor.

Slides:



Advertisements
Similar presentations
Introduction to MOSFETs
Advertisements

Transistors (MOSFETs)
The Bipolar Junction Transistor
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Project Analysis and Evaluation Chapter Eleven.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Credit and Inventory Management Chapter Twenty-One.
Module 2: Part 2 Basic BJT Amplifiers. Learning Objectives After studying this module, the reader should have the ability to: n Explain graphically the.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Raising Capital Chapter Sixteen.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Introduction to Valuation: The Time Value of Money Chapter Five.
The metal-oxide field-effect transistor (MOSFET)
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Net Present Value and Other Investment Criteria Chapter Nine.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Short-Term Finance and Planning Chapter Nineteen.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Determining the Target Cash Balance Chapter Twenty A.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Long-Term Financial Planning and Growth Chapter Four.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Interest Rates and Bond Valuation Chapter Seven.
Module 3: Part 1 The Field-Effect Transistor (FET)
© Electronics Recall Last Lecture The MOSFET has only one current, I D Operation of MOSFET – NMOS and PMOS – For NMOS, V GS > V TN V DS sat = V GS – V.
Microelectronics Circuit Analysis and Design Donald A. Neamen
MOS Field-Effect Transistors (MOSFETs)
Chapter Five The Field-Effect Transistor. Figure 6—2 A three-terminal nonlinear device that can be controlled by the voltage at the third terminal v.
© 2003 The McGraw-Hill Companies, Inc. All rights reserved. Option Valuation Chapter Twenty- Four.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc. C H A P T E R 5 MOS Field-Effect Transistors (MOSFETs)
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Electronic Circuit Analysis and Design Second Edition
Microelectronics Circuit Analysis and Design
BJT DC Circuits I. In this Lecture, we will:  Discuss further the dc analysis and design techniques of bipolar transistor circuits.  Examine some basic.
McGraw-Hill © 2008 The McGraw-Hill Companies Inc. All rights reserved. Electronics Principles & Applications Seventh Edition Chapter 7 More About Small-Signal.
7-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Seven Frequency Response.
4-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Four Basic BJT Amplifiers.
MOS Field-Effect Transistors (MOSFETs)
Chapter 11 Field effect Transistors: Operation, Circuit, Models, and Applications Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction.
3-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Three The Bipolar Junction Transistor.
16-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Sixteen MOSFET Digital Circuits.
10-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Ten Integrated Circuit Biasing and Active Loads.
Field Effect Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 11.
2-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter 2 Diode Circuits.
ELECTRICA L ENGINEERING Principles and Applications SECOND EDITION ALLAN R. HAMBLEY ©2002 Prentice-Hall, Inc. Chapter 12 Field-Effect Transistors Chapter.
Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.
13-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Thirteen Operational Amplifier Circuits.
Output Stages and Power Amplifiers Chapter Eight McGraw-Hill
Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent.
© 2000 Prentice Hall Inc. Figure 5.1 n-Channel enhancement MOSFET showing channel length L and channel width W.
14-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Fourteen Nonideal Effects in Operational Amplifier Circuits.
Basic FET Amplifiers Chapter Six McGraw-Hill
7-1 McGraw-Hill © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 7 More About Small-Signal.
© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 7-1 Electronics Principles & Applications Eighth Edition Chapter 7 More About Small-Signal.
Microelectronic Circuit Design McGraw-Hill Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock.
MOSFET DC circuit analysis Common-Source Circuit
1 Tai-Cheng Lee Spring 2006 MOS Field-Effect Transistors (MOS) Tai-Cheng Lee Electrical Engineering/GIEE, NTU.
Chapter 6 Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved. High-Speed CMOS Logic Design.
9-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Nine The Ideal Operational Amplifier.
Recall Lecture 17 MOSFET DC Analysis 1.Using GS (SG) Loop to calculate V GS Remember that there is NO gate current! 2.Assume in saturation Calculate I.
17-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Seventeen Bipolar Digital Circuits.
Transistors (MOSFETs)
The Bipolar Junction Transistor
Copyright © 2012, Elsevier Inc. All rights Reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Copyright © 2013 Elsevier Inc. All rights reserved.
Copyright © 2012, Elsevier Inc. All rights Reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Copyright © 2012, Elsevier Inc. All rights Reserved.
Copyright © 2013 Elsevier Inc. All rights reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Modeling Functionality with Use Cases
Copyright © 2012, Elsevier Inc. All rights Reserved.
Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.
Copyright © 2012, Elsevier Inc. All rights Reserved.
Copyright © 2013 Elsevier Inc. All rights reserved.
Copyright © 2012, Elsevier Inc. All rights Reserved.
Presentation transcript:

5-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Five The Field-Effect Transistor

5-2 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved.

5-3 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.24 (a) An NMOS common-source circuit and (b) the NMOS circuit for Example 5.3

5-4 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.25 (a) A PMOS common-source circuit, (b) results when saturation-region bias assumption is incorrect, and (c) results when nonsaturation-region bias assumption is correct

5-5 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.28 Transistor characteristics, v DS (sat) curve, load line, and Q-point for the NMOS common-course circuit in Figure 5.24 (b)

5-6 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved.

5-7 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.29 NMOS common-source circuit with source resistor

5-8 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.35 Circuit with enhancement load devices and NMOS driver

5-9 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.36 Voltage transfer characteristics of NMOS inverter with enhancement load device

5-10 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.37 (a) Depletion-mode NMOS device with the gate connected to the source and (b) current-voltage characteristics

5-11 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.39 Circuit with depletion load device and NMOS driver

5-12 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.40 Voltage transfer characteristics of NMOS inverter with depletion load device

5-13 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Figure 5.47 (a) An NMOS common-source circuit with a time-varying signal coupled to the gate and (b) transistor characteristics, load line, and superimposed sinusoidal signals