日 期： 指導老師：林克默 博士 學 生：陳冠廷

Outline 1.Introduction 2.Experimental 3. Results and discussion 4. Conclusions

1.Introduction Sol–gel method is widely used to obtain various kinds of functional oxide films, including ZnO and doped ZnO thin films Generally, two principal routes to obtain oxide thin films are used: the alkoxide route, using organo-metallic precursors often expensive and dangerous and the nonalkoxideroute, using water or alcohol solutions of metal salts such as acetates, nitrates or chlorides The main factors affecting the sol–gel film micro structure and properties are: solution chemical equilibrium,substrate-film interaction during film deposition and thermal processing of the as- deposited gel film

2.Experimental Using a sol prepared with Zn(CH3COO)2O2H2O (purity–99.5%), AlCl3O6H2O (purity–98%), 2-methoxyethanol and monoethanolamine (MEA). The concentration of metal ions in the solution was 0.75 mol/l and the molar ratio of MEA to metal salts was 1.0. Two values of dopant concentration (1 and 2 wt.%) and three post- heat-treatments (PT1, PT2, PT3) were used. The post-heat-treatments are specified in Table 1. After each post- heat-treatment and prior measurements, all the samples have been heated for final annealing at 450 C for 20 min in forming gas.

3.Results and discussion Fig. 1. XRD patterns of Al (1 wt.%)-doped ZnO thin film after PT1 (sample B) and PT2 (sample A). Fig. 2. XRD patterns of Al (2 wt.%)-doped ZnO thin films after PT1 (sample C), PT2 (sample D) and PT3 (sample E).

Fig. 3. SEM micrographs of the surface of the Al (1 wt.%)-doped ZnO thin films after PT1 (sample B) and PT2 (sample A).

Fig. 4. SEM micrographs of the surface of the Al (2 wt.%)-doped ZnO thin films after PT1 (sample C), PT3 with cooling in N2 (Sample E) and PT3 with cooling in forming gas (sample F).

Fig. 5. The optical transmittance of Al-doped ZnO thin film after annealing.

4.Conclusions 薄膜導電率介於 1.3 到 7.2 X10 -3 Ωcm 且在可見光範圍有非 常好的穿透率 (80~90%) 。 鋁的含量增加 1 至 2 ％會使高導電性，但效果並不十分明 顯。第一次熱處理在這些大氣（氧化，惰性或還原）下冷 卻會明顯影響薄膜的導電性。

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