ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed Gang Cheng, Xinghui Wu, Bing Liu, Bing Li, Xingtang.

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Presentation transcript:

ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed Gang Cheng, Xinghui Wu, Bing Liu, Bing Li, Xingtang Zhang, and Zuliang Du APPLIED PHYSICS LETTERS 99, (2011) 報告者 : B.J.Hu

Outline  Introduction  Experiment  Model  Conclusion

Introduction   ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications.   In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4105, A/W, and , respectively.   The recovery time is 0.28 s when Photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms.   The physical mechanisms of the fast recovery properties have also been discussed.

Experiment  I-V curve 結果 (a) The log-scale I-V curves of a single ZnO NW in dark and under UV light. (b) The linear-scale plot of the I-V curve under UV light; inset: the SEM image of the ZnO NW with scale bar of 5lm.

Experiment  Time response 實驗結果 (a) The time resolved photocurrent curve at t5V with multiple on/off cycles. (b) The magnification of a single on/off cycle.

Model  Structure The barrier structure model of NW SB in dark (a) and under UV light (b), respectively.

Conclusion   The UV photodetector of ZnO NW SB with high sensitivity and fast recovery speed has been fabricated.   The on/off ratio, sensitivity, and photocurrent gain are 4105, A/W, and , respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding recovery time constant si is as short as 46 ms.   The exponential-type dependence of photocurrent on N SBinterf and the faster relaxation speed of holes stayed in SB interface are the physical basis for the fast recovery speed of NW SB photocurrent.   The high sensitivity and fast recovery properties of ZnO NW SB make it a promising candidate for high performance UV photodetectors and photoswitches.

Thanks for your attention