EE 466/586 VLSI Design Partha Pande School of EECS Washington State University

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Presentation transcript:

EE 466/586 VLSI Design Partha Pande School of EECS Washington State University

Lecture 2 The MOS Transistor (Reference: Chapter 2 of Weste and Harris or Chapter 2 of HJS)

The MOS Transistor Polysilicon Aluminum

Structural Details  Channel length L  Typical values of L today vary from 90nm to 32 nm  The dimension will continue to scale according to Moore’s law  Perpendicular to the plane of the figure is the channel width W  Much larger than the minimum length  Gate oxide thickness  Around 25 Å

Operational Mechanism  We consider a NMOS transistor  N+ source and N+ drain regions separated by p-type material  The body or substrate, is a single-crystal silicon wafer  Suppose, source, drain and body are all tied to ground and a positive voltage applied to the gate  A positive gate voltage will tend to draw electrons from the substrate into the channel region  A conducting path is created between drain and source  Current will flow from drain to source in presence of a voltage difference between the source and the drain  The gate voltage needed to initiate formation of a conducting channel is termed as the threshold voltage Vt

Threshold Voltage: Concept

The Threshold Voltage Follow board notes

What is a Transistor? A Switch! |V GS | An MOS Transistor

The Body Effect

Current-Voltage Relations  Follow board notes

Current-Voltage Relations Quadratic Relationship x V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T

Transistor in Linear

Transistor in Saturation Pinch-off

Current-Voltage Relations The Deep-Submicron Era  The quadratic model is valid for long channel devices  In DSM, channel length is scaled  Vertical and horizontal electric fields are large and they interact with each other  Saturation in DSM devices occur when the carriers reach velocity saturation

Effect of high fields Horizontal Field Vertical Field

Effect of high fields (Cont’d)  Effect of the vertical field on the mobility  The vertical field increases the electron scattering at the surface of the channel  Follow board notes  The horizontal field acts to reduce the mobility even further

Velocity Saturation

Velocity Saturation (Cont’d)

Current Equations

Current Equation (Cont’d)

Current Equation (Saturation)

Current-Voltage Relations The Deep-Submicron Era Linear Relationship -4 V DS (V) x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Early Saturation

Perspective I D Long-channel device Short-channel device V DS V DSAT V GS - V T V GS = V DD

I D versus V GS x V GS (V) I D (A) x V GS (V) I D (A) quadratic linear Long Channel Short Channel

I D versus V DS -4 V DS (V) x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V x V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T Long ChannelShort Channel

Simple Model versus SPICE V DS (V) I D (A) Velocity Saturated Linear Saturated V DSAT =V GT V DS =V DSAT V DS =V GT

A PMOS Transistor x V DS (V) I D (A) Assume all variables negative! VGS = -1.0V VGS = -1.5V VGS = -2.0V VGS = -2.5V

Transistor Model for Manual Analysis

The Transistor as a Switch