Investigating the Frequency Dependence Elements of CMOS RFIC Interconnects for Physical Modeling B. H. Ong; C. B. Sia; K. S. Yeo; J. G. Ma; M. A. Do; E.

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Presentation transcript:

Investigating the Frequency Dependence Elements of CMOS RFIC Interconnects for Physical Modeling B. H. Ong; C. B. Sia; K. S. Yeo; J. G. Ma; M. A. Do; E. P. Li School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore Advanced RFIC(S) Pte Ltd, Singapore Institute of High Performance Computing, Singapore

DISCLAIMER! Dr. Ong could not come due to compulsory service with the Singapore army I (Lou Scheffer) have prepared this summary of the paper, using the paper itself and my correspondence about with him about this paper earlier This is my interpretation of the work, not Dr. Ong’s. I have been unable to contact him by for correction, clarifications, etc. He has not even seen, much less blessed, this talk. So any mistakes here are my responsibility, and should not be blamed on Dr. Ong

Basic idea Use an analog technique called “S parameters” to measure interconnect Deduce a SPICE model from these measurements Some energy is reflected, some absorbed, some transmitted. Reflected is S11 and S22 Transmitted is S12 and S21 RF in Component Port 1 Port 2

Why do this? Some interconnect values are very hard to measure directly Dominated entirely by test fixtures C of wires L of wires Resistance if not at DC S parameters can be cascaded, so effect of pads, bonding, etc. can be removed Called “de-embedding”

What they built and measured

Layer Thicknesses

S11 = reflection from the input port

S21 = Transfer through the line

Series Resistance

Self-Inductance

Modeling the experimental data

Modelled S12

Modelled S12 Phase

Modelled reflection magnitude

Modelled reflection phase

What happens if you leave some elements out?

Conclusions (Ong’s) Wire models can be well fit (S parameters or Spice) up to very high frequencies

Conclusions (mine) The models are well understood The hardware folks can measure all values we want So far they have measures of what the analog folks want If we cooperate, they could easily measure more ‘digital’ parameters Over lower metal, not substrate All layers and widths We need to cooperate with test structure folks