1/10 Irradiation test of CW bases Yu. Gilitsky / IHEP (Protvino)

Slides:



Advertisements
Similar presentations
Operational Amplifier
Advertisements

Principles & Applications Small-Signal Amplifiers
An Electronic System Power Supply Example
DC-DC Fundamentals 1.4 Charge Pump Regulator
Kit Building Class Lesson 4Page 1 R and X in Series Inductors and capacitors resist the flow of AC. This property is called reactance. Resistance also.
CHAPTER 3: SPECIAL PURPOSE OP-AMP CIRCUITS
EC 2208 – Electronic Circuits Lab 1
555 Timer ©Paul Godin Updated February Oscillators ◊We have looked at simple oscillator designs using an inverter, and had a brief look at crystal.
BIJUNCTION TRANSISTOR
1 LHCb CALO commissioning meeting Anatoli Konoplyannikov /ITEP/ Proposal of the ECAL CW base modification + Anatoli, Michail ( Michail Soldatov.
The Product Detector BFO
Astable multivibrators I
Chapter 1 Quick review over Electronics and Electric Components Prepared By : Elec Solv.
Linear Regulator Fundamentals 2.1 Types of Linear Regulators.
Kit Building Class Lesson 3Page 1 The Zener Diode +V F +I F zener point Constant breakdown voltage The zener diode exhibits a constant voltage.
Electronics Principles & Applications Sixth Edition Chapter 6 Introduction to Small-Signal Amplifiers (student version) ©2003 Glencoe/McGraw-Hill Charles.
Microwave Amplifier Design
Characteristics of Op-Amp &
Electrical, Electronic and Digital Principles (EEDP)
Chapter 28 Basic Transistor Theory. 2 Transistor Construction Bipolar Junction Transistor (BJT) –3 layers of doped semiconductor –2 p-n junctions –Layers.
Introduction to Transistors
Kit Building Class Lesson 7Page 1 The JFET The Junction Field Effect Transistor is another type of transistor, which can be used in the same kinds of circuits.
Inverting Amplifier. Introduction An inverting amplifier is a type of electrical circuit that reverses the flow of current passing through it. This reversal.
Chapter 19 Electronics Fundamentals Circuits, Devices and Applications - Floyd © Copyright 2007 Prentice-Hall Chapter 19.
Transistor Amplifiers
Power Amplifiers Unit – 4.1 Classification of Power Amplifiers  Power amplifiers are classified based on the Q point  If the operating point is chosen.
10/11/2015 Operational Amplifier Characterization Chapter 3.
CHAPTER 4 The Bipolar Transistor. OBJECTIVES Describe and Analyze: Transistor architecture Transistor characteristics Transistors as switches Transistor.
© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 6-1 Electronics Principles & Applications Eighth Edition Chapter 6 Introduction.
Electronics Principles & Applications Fifth Edition Chapter 6 Introduction to Small-Signal Amplifiers ©1999 Glencoe/McGraw-Hill Charles A. Schuler.
© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 6-1 Electronics Principles & Applications Eighth Edition Chapter 6 Introduction.
1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.
Understanding the                                                                                                                                                                                                                          
BJT (cont’d). OUTLINE – Transconductance – Small-signal model – The Early effect – BJT operation in saturation mode Reading: Chapter
Chapter 6 Voltage Regulators By En. Rosemizi Bin Abd Rahim EMT212 – Analog Electronic II.
Other Transistor Circuits
Power Amplifiers Unit – 4.1 Classification of Power Amplifiers  Power amplifiers are classified based on the Q point  If the operating point is chosen.
Microelectronic Circuit Design, 3E McGraw-Hill Chapter 15 Differential Amplifiers and Operational Amplifier Design Microelectronic Circuit Design Richard.
EMT212 – Analog Electronic II
THEME 9: Multi-vibrators. Multi-vibrators in integral realization. Multi-vibrators (also called oscillators or pulse train generators) have two unstable.
B IPOLAR T RANSISTOR. Transistors are three terminal active devices made from different semiconductor materials that can act as either an insulator or.
The Working Theory of an RC Coupled Amplifier in Electronics.
NAME: NIDHI PARMAR ENR.NO.: GUIDED BY: RICHA TRIPATHI.
 The differentiator or differentiating amplifier is as shown in figure.  This circuit will perform the mathematical operation of differentiation.
5-3-2 The Emitter Follower. Learning Objectives: At the end of this topic you will be able to;
SUB.TEACHER:- MR.PRAVIN BARAD NAME:-SAGAR KUMBHANI ( ) -VIKRAMSINH JADAV( ) -PARECHA TUSHAR( ) TOPIC:-LINEAR AMPLIFIER(BJT.
7/20/2016 Subject Name: LINEAR IC’s AND APPLICATIONS Subject Code:10EC46 Prepared By: Aparna.P Department: Electronics and Communication Date:
Transistor Modelling A model is a combination of circuit elements, properly chosen, that best approximates the actual behaviour of a semiconductor device.
Chapter 4 DC Biasing–BJTs
TYPES OF COUPLING IN AMPLIFIER
LARGE SIGNAL AMPLIFIERS CLASS A , B AND C POWER AMPLIFIERS
Subject Name: LINEAR INTEGRATED CIRCUITS Subject Code: 10EC46
Lecture 10 Bipolar Junction Transistor (BJT)
PMT/CW Irradiation tests-2010
555 Timer EEE DEPARTMENT KUMPAVAT HARPAL( )
The Zener Diode The zener diode exhibits a constant voltage
Introduction to Transistors
Transistor Amplifiers
Principles & Applications Small-Signal Amplifiers
Chapter 5: BJT AC Analysis
POWER AMPLIFIERS.
Electronics Fundamentals
J.-B. Seo, S. Srirangarajan, S.-D. Roy, and S. Janardhanan
Amplifiers Classes Electronics-II
Amplifiers Classes Electronics-II
The Zener Diode The zener diode exhibits a constant voltage
Chapter 3 – Transistor Amplifiers – Part 1
CHAPTER 57 BIPOLAR JUNCTION TRANSISTOR
CHAPTER 60 SINGLE TRANSISTOR AMPLIFIERS
Chapter 15 Differential Amplifiers and Operational Amplifier Design
Presentation transcript:

1/10 Irradiation test of CW bases Yu. Gilitsky / IHEP (Protvino)

2/10 The irradiation test was done to compare performance of different CW configurations at high doses. The test was conducted Nov 2008 at the HiLum facility (IHEP, Protvino) constructed for the irradiation tests of the ATLAS LAr. The 50 GeV proton beam (extracted using bent crystal technique) has intensity up to p/spill (9 sec interval, 1.7 sec duration) Four samples with different configurations were places behind Absorber I (1λ I steel). U CTRL was fixed to ~2V by a resistor divider arranged on each board. The output HV was monitored during the whole irradiation period. ECAL CW samples

3/10 Absorber I (1 λ 0 of steel) D1 CW1 D3D4D2 CW2CW3CW4 Proton beam 50 GeV Actual beam positionExpected beam position D1-D4 – film dosimeters CW #configdetailskrad CW1HCALmc2 Cf=100pF, Rf=62kΩ, CJ=47pF, C1=C2=0, RJ=0 800 CW2ECAL orig C1=C2=47nF (C1  MV), Rf=0, Cf=0, CJ=0, RJ=0 900 CW3HCALmc1 Cf=100pF, Rf=62kΩ, CJ=47pF, C1=C2=0, RJ=5.6kΩ 700 CW4ECALmc C1=C2=47nF, Rf=62kΩ, Cf=100pF, CJ=0, RJ=0 500

4/10 Protons rate from beam monitors start of irradiation start of degradation CW1 and CW3

5/10 November 2008 HV, V base HVout in HCAL mode, V expectedright after irradiation in 2 days in 5 days in 50 days CW CW CW CW4835 Significant HV drop was observed in both HCALmc bases after ~500 krad; the ECALxx bases were not affected. In order to proof that the drop was determined by the configuration, in 5 days after the irradiation the CW2 base (900 krad) was modified to: ▪“ECAL+HCAL” (ECALorig + Rf=62kΩ+Cf=100pF): OK ▪ECALmc (C1=C2=47nF): OK ▪HCALmc (C1=C2=0): HV≈670V, unstable ▪ECALmc: OK High rate test (with PM) in the ECALmc mode: ▪ HV=1500V stability checked up to 30 μA OK ▪ HV=850V – checked up to 50 μA OK One can conclude that configurations where C1 is present (connected either to MV or to ground) (“ECAL” type) are more “rad hard” than those where C1 is absent (“HCAL” type) Summary on HVout in “HCAL” modes

6/10 HV OUT as a function of U CTRL Conditions: MV=80V, LV=+6V -6V Same conversion factor, but different max HV, in “HCAL” and “ECAL” modes. For more detailed studies 4 sets of oscillograms were taken: # conf U CTRL, V HV, V 1 HCAL HCAL ≈ *saturated* 3 ECAL ECAL Each set consisted of ~20 oscillograms taken in different points, such that it was possible to calculate currents in places of interest. On 08/01/09 (~50 days after the irradiation) the CW1 base (800 krad) was studied in details in both “HCAL” and “ECAL” configurations. Switching was done by soldering / unsoldering capacitors: “HCAL”: C J =47pF present, C1 and C2 absent “ECAL”: C J absent, C1=47 nF and C2=3.3nF present always present were: RJ=10kΩ, Rf=62kΩ and Cf=100pF

7/10 set #2 As a result of irradiation: ▪The oscillator produces 25 kHz sine-like wave, 4 V p-p. ▪op amp gain is ~2-5 at 25 kHz (U OUT (t) and ΔU IN (t) of the oscillator op amp shown; note gain = U OUT /ΔU IN ≈ 5 and ~90 o phase shift of U OUT wrt U IN ) ▪ DC gain is at least several hundred: < 20 mV change in ΔU IN flips the output (measured later 14/01/09) ▪op amp gets significant output impedance (output current limitation?); differential output impedance of saturated regulator op amp shown, set #2 ▪npn transistor β’s become 5-7 (Q1 & Q2 shown) set #2 set #4

8/10 Looking at “HCAL” set #2, to find out the reason for limiting HV Q1 is always saturated, Q2 active  insufficient current into Q2 base I PUMP (current in R J =10k): Q3 part (up) OK, problem with Q2 part (down) Q1 I C NB I C negative (reverse) for part of period Maximum Q2 base current possible in HCAL conf.

9/10 Compare to “ECAL” set #4, HV=1140 V Factor of >2 wrt “HCAL” in charge injected into the Q2 base I PUMP : both Q3 and Q2 half-periods OK

10/10 Possible explanation of the difference between “HCAL” and “ECAL” type bases Because of low gain of irradiated transistors, the irradiated oscillator op amp (with lowered load capabilities) has to draw non-negligible current into Q2 and Q3 bases. The presence of capacitor C2b means that the amount of charge delivered into [Q2 b-e junction || R2e] during the half period when Q2 is open should be returned back during next half period, when it is closed (Q3 open) In the “ECAL” configuration, C2b is recharged from C1 through R2e and R2b. In the “HCAL” configuration, the return path is more difficult: as C1 is not present, charge comes from the regulator op amp, passing through R1b, b-c junction of Q1 and then R2e and R2b (this is the reason why in the “HCAL” configuration the Q1 collector current is reversed during ~ half a period). And max possible returned charge is insufficient for operation at higher HV. As a proof of correct understanding the problem: to boost the C2b recharge in the “HCAL” configuration, a diode was added || R2e. The max HV increased till the same 1320 V as in the “ECAL” configuration.