UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED Response Time of.

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Presentation transcript:

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces UNCLASSIFIED Response Time of GaN-based Deep Submicron Plasmonic Terahertz Detectors G. Rupper 1, S. Rudin 1, and M. Shur 2 1 U.S. Army Research Laboratory, Adelphi, Maryland, USA ‎ 2 Rensselaer Polytechnic Institute, Troy, New York, USA

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Plasmonic FET Devices Plasma waves propagate with a higher velocity than the electron drift velocity. This allows devices based on the plasma wave propagation to operate at higher frequencies the devices based on electron drift. ~ ~ U ac U gs SD Gate x = 0x = L High Mobility Low Mobility Tunable Detector Broadband Detector ~ ~ U ac ΔUΔU U gs Gate Source Drain j Detector Configuration: U ac from RF radiation, j < en/2  W Source Configuration: U ac = 0, j > en/2  W

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Plasmonic FET Detectors Advantages of Plasmonic FET THz Detectors: High Responsivity 1 (kV/W) Low Noise Effective Power 2 (pW/Hz ½ ) Tunable by gate voltage (for high mobility, short channel devices) Fast Response? 1) Fatimy et. al. J. App. Phys. (2010), Watanabe et. al. IEEE Sensors (2013) Kurita et. al. Appl. Phys. Lett. (2012) 2) Sun et. al. Appl. Phys. Lett (2012)

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces The 2-D electron gas plasma is modeled with a hydrodynamic model Density balance equation Navier-Stokes equation Heat equation Solved numerically for arbitrary signals Plasma Modeling

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Electric Potential Model Above threshold Below threshold = = Above threshold Below threshold

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Frequency Response Device Parameters: GaN L=100nm d=15nm µ=800 cm 2 /Vs U 0 =U gs -U th =0.1V

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Large Signal Response Small signal output proportional to U a 2 (Intensity) Large signal output proportional to U a (Electric Field)

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Small Signal Propagation U a =0.02V Small signals have a smooth density transition across the device

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Transition Point Signal Propagation U a =0.1V At the transition intensity, we start to see a wave front propagating across the device and reflecting off of the drain

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Large Signal Propagation U a =0.5V Large signals have a clear shock wave propagation across the device

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response High Mobility, No Viscosity Response is an exponentially decaying square wave

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response Viscosity quickly attenuates high order modes leaving single harmonic frequency

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response Thermal effects also attenuates high order modes leaving single harmonic frequency

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response Low mobility eliminates periodic ringing All mobilies have short delay before exponential decay begins

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Analytical Step Response Based on perturbation small signal analysis Decay time: Oscillation period:

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Step Response Approximations Low Mobility High Mobility With Gradual Channel Approx. From Drift Model

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Numerical and Analytical Solution Good agreement between numerical solution (lines) and analytical solution (dots) GCA/Drift model reasonable above threashold Does not include pressure effects

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Thermal Effects Thermal effects reduces the decay time for high mobilities Small changes for low mobilities

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces For low mobilities, increasing mobility increases the modulation frequency response. For high mobilities, increasing mobility decreases the detector bandwidth, and decreases modulation frequency response. There is an optimal mobility for the largest possible modulation frequency response. Above threshold response to AM signal

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces U 0 =0.1V f 0 =0.81THz Modulation Cutoff Frequency Optimal mobility for maximum cutoff frequency Large range of mobilities for high bandwidth (>50GHz) Experimental mobility (~800 cm 2 /Vs) close to maximum

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Modulation Cutoff Frequency Drift model Good for low mobility, above threashold Scaling constant fit to data Kachorovskii and Shur, Solid State Elec. (2007)

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Modulation Cutoff Frequency Good model for all mobilities Overestimates peak

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Modulation Cutoff Frequency High mobility limited by bandwidth of detector Allows gate voltage tunable detector

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Summary We have simulated the response of a plasmonic FET detector to step and modulated input signals Plasmonic FET THz detectors have a fast response time (~ps). Can be used for very high bandwidth (>100GHz) signals There is a mobility that provides the maximum detector bandwidth for modulated signals High mobility detectors provide tunable passband detectors

UNCLASSIFIED The Nation’s Premier Laboratory for Land Forces Aknowledgement The work at RPI (M. Shur) was supported in part by the U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for Multi-Scale Modeling of Electronic materials (MSME).