RTDs: Resistance Temperature Detectors 1 Simone Traverso

- Heidelberg DWL200, LASER lithography system 2 Masks: equipment - Coillard Photolithography, wet bench, resist strip and develop - Suss DV10, developer for mask and thick resists

3 I Mask (done)

4 II Mask (done)

5 III Mask (error, it must be done again)

6 Coating Equipment: Rite Track 88 Series, coater track for positive resist Wafers: 20 wafers coated, with Ti-Pt, Al-Si1% and AlN-W layers

7 Exposure Equipment: Süss MA6, double side mask aligner and bond aligner Wafers exposed: first six Ti-Pt wafers (from 100nm to 200nm thickness) Exposure test: Two wafers (one in Ti-Pt, one in Al-Si1%) with 8 different exposure times, from 6.5s to 10s. Recommended value: 8s Chosen value: 8s after microscope test Mask used: first one

8 Development Equipment: Rite Track 88 Series, developer track for positive resist Wafers developed: first six Ti-Pt wafers (from 100nm to 200nm thickness)

9 Dry Etching Equipment: STS Multiplex ICP, dry etcher, chlorine and bromine chemistry Wafers etched: Ti-Pt wafers (from 100nm to 200nm thickness)

10 Next Steps Resistances measuring with Lucian Barbut Exposure and development of the other 14 wafers III Mask must be done