Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. SEM images of TiO 2 /SiO 2, after etching in ICP-RIE for 15 min with (a) Al mask and (b) Cr mask. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. Etch rates and selectivities (a) as a function of RF power, at fixed 500 W ICP power, and (b) as a function of ICP power at fixed 300 W RF power. Etch condition: Ar/SF 6 = 20/10 sccm, 20°C, 10 mTorr. ITO etch masks were used. Circles represent the selectivity, rectangles represent the etch rate, and triangles represent the dc bias. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. SEM image of the etched mirror at etch temperature of 20°C, pressure of 10 mTorr (a) at 1500 W ICP/300 WRF, Ar/SF 6 : 20/10 sccm, (b) at 500 W ICP/300 W RF, Ar/SF 6 :20/10 sccm, (c) at 500 W ICP/150 W RF, Ar/SF 6 : 20/10 sccm, (d) at 500 W ICP/250 W RF, Ar/SF 6 : 20/10 sccm, (e) at 500 W ICP/300 W RF, Ar/SF 6 : 20/20 sccm, and (f) at 500 W ICP/300 W RF, Ar/SF 6 : 10/10 sccm. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. Etch rates and selectivities as a function of (a) varied SF 6, at fixed 20 sccm of Ar and (b) varied Ar, at fixed 10 sccm of SF 6 gas flow rate. ITO etch masks were used. Circles represent the selectivity, and rectangles represent the etch rate. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. Etch rates and selectivities (a) as a function of the process pressure, and (b) as a function of the temperature. Etch conditions: 500 W ICP/300 W RF, Ar/SF 6 : 20/10 sccm. ITO etch masks were used. Circles represent the selectivity, and rectangles represent the etch rate. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. SEM images show the etched mirrors. Etch conditions: Ar/SF 6 : 20/10 sccm, 500 W ICP/300 W RF, 6 mTorr (a) at −30°C, residue was observed on the sidewall, etch rate of ∼ 70 nm/min; (b) at 20°C with etch rate of 80 nm/min, and (c) at 40°C with etch rate of ∼ 90 nm/min. ITO masks were used. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. SEM image shows the sidewall of the mirror. The WLI images plot the filter structure with four suspensions. Ra (average roughness) of the structure measured by WLI was approximately 1–10 nm. Etch conditions: 250 W RF/500 W ICP, 20°C, Ar/SF 6 : 10/10 sccm. AZnLoF2070 5:1 was used as the etch mask. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 5/30/2016 Copyright © 2016 SPIE. All rights reserved. Optical transmission spectrum of a filter structure, for three cavity layers, with transmittance of up to 90% and a FWHM of <3 nm. The sample was measured by microscope spectrometer. Figure Legend: Characterization of dry etching of TiO 2 /SiO 2 distributed Bragg reflectors for tunable optical sensor arrays J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /