1 HBTs: high-frequency attributes LECTURE 16 Figures of merit f T : definition and derivation Design for high f T f max : definition and derivation Design.

Slides:



Advertisements
Similar presentations
Transformer Coupling.
Advertisements

Frequency response I As the frequency of the processed signals increases, the effects of parasitic capacitance in (BJT/MOS) transistors start to manifest.
Microelectronic Circuits, Sixth Edition
Lesson 25 AC Thèvenin Max Power Transfer. Learning Objectives Explain under what conditions a source transfers maximum power to a load. Determine the.
Voltage-Series Feedback
Cascode Stage. OUTLINE Review of BJT Amplifiers Cascode Stage Reading: Chapter 9.1.
COMSATS Institute of Information Technology Virtual campus Islamabad
7.2 The Basic Gain Cell 7.3 The Cascode Amplifier
Solid State Amplifier At microwave frequencies, the scattering parameters are used In the design of microwave amplifiers. Design Goals: 1.Maximum power.
The maximum current flows when |X C |
ELEC Lecture 191 ELEC 412 RF & Microwave Engineering Fall 2004 Lecture 19.
Lecture 20: Frequency Response: Miller Effect
Noise in BJT The objective is to determine, and for a bipolar transistor. The hybrid- model that includes the noise sources is shown below Fig 5-3 The.
The MOS Cascode (Cascaded Cathode)
Spring 2007EE130 Lecture 27, Slide 1 Lecture #27 OUTLINE BJT small signal model BJT cutoff frequency BJT transient (switching) response Reading: Finish.
BJT Differential Pair Transistors Q1, Q2 are matched
Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 18 Lecture 18: Bipolar Single Stage Amplifiers Prof. Niknejad.
Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 19 Lecture 19: Frequency Response Prof. Niknejad.
Microelectronic circuits by Meiling CHEN 1 Lecture 13 MOSFET Differential Amplifiers.
1 The 741 Operational-Amplifier. Reference Bias Current : The 741 op-amp circuit. Reference Bias Current.
Operational amplifiers Building blocks of servos.
Derivation of fT And fMAX of a MOSFET
Building Blocks of Integrated-Circuit Amplifiers
12.5 Common Source Amplifiers
Chapter 13 Small-Signal Modeling and Linear Amplification
COMSATS Institute of Information Technology Virtual campus Islamabad
1 Frequency response I As the frequency of the processed signals increases, the effects of parasitic capacitance in (BJT/MOS) transistors start to manifest.
Electronic Amplifiers 1 शनिवार, 29 अगस्त 2015 शनिवार, 29 अगस्त 2015 शनिवार, 29 अगस्त 2015 शनिवार, 29 अगस्त 2015 शनिवार, 29 अगस्त 2015 शनिवार, 29 अगस्त.
Part B-3 AMPLIFIERS: Small signal low frequency transistor amplifier circuits: h-parameter representation of a transistor, Analysis of single stage transistor.
7-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Seven Frequency Response.
Chapter Seven Frequency Response. Figure 7.1 Amplifier gain versus frequency.
D. De Venuto,Politecnico di Bari 0 The CMOS common-gate amplifier: (a) circuit; (b) small-signal equivalent circuit; and (c) simplified version of the.
Microwave Engineering, 3rd Edition by David M. Pozar
1 HF power gains and f max LECTURE 19 Clarification of power gains: MAG, MSG, U.
1 Heterojunction Bipolar Transistors Heterojunction Bipolar Transistorsfor High-Frequency Operation D.L. Pulfrey Department of Electrical and Computer.
Transistor Amplifiers
11-1 McGraw-Hill Copyright © 2001 by the McGraw-Hill Companies, Inc. All rights reserved. Chapter Eleven Differential and Multistage Amplifiers.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc. C H A P T E R 9 Frequency Response.
JFET and MOSFET Amplifiers
ELECTRICA L ENGINEERING Principles and Applications SECOND EDITION ALLAN R. HAMBLEY ©2002 Prentice-Hall, Inc. Chapter 12 Field-Effect Transistors Chapter.
Chapter 20 AC Network Theorems. Superposition Theorem The voltage across (or current through) an element is determined by summing the voltage (or current)
Passive filters Use Passive components (R, L, C) Does not provide gain
BJT amplifier & small-signal concept
Microelectronic Circuit Design, 3E McGraw-Hill Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc. Figure 9.23 The CS circuit at s = s Z. The output.
Figure 7.27 A simple but inefficient approach for differential to single-ended conversion. sedr42021_0727.jpg.
ECE 4710: Lecture #37 1 Link Budget Analysis  BER baseband performance determined by signal to noise ratio ( S / N ) at input to detector (product, envelope,
Oxford University Publishing Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith ( ) 8.2. Small-Signal Operation of the MOS Differential.
1 Tai-Cheng Lee Spring 2006 MOS Field-Effect Transistors (MOS) Tai-Cheng Lee Electrical Engineering/GIEE, NTU.
Field Effect Transistors (2)
1 Small Signal Model MOS Field-Effect Transistors (MOSFETs)
Single-Stage Integrated- Circuit Amplifiers. IC Biasing The Basic MOSFET Current Source SATURATION.
Exam 3 information Open book, open notes, bring a calculator Eligible topics (1 of 9) (not an exhaustive list) Generic amplifiers Amplifier basics voltage.
Intro to BJT Amplifier Circuits. In this Lecture, we will:  Discuss how a BJT is used as a switch (use this as a frame of reference).  Understand the.
VI. HIGH-EFFICIENCY SWITCHMODE HYBRID AND MMIC POWER AMPLIFIERS:
The Bipolar Junction Transistor
Derivation of fT And fMAX of a MOSFET
UNIT- V Small Signal Low Frequency Transistor Amplifier Models:
HIGH FREQUENCY BEHAVIOR OF BASIC AMPLIFIERS
Common Base and Common Collector Amplifiers
Lecture 10 Bipolar Junction Transistor (BJT)
Open book, open notes, bring a calculator
Basic MOS Amplifiers: DC and Low Frequency Behavior
DMT 231/3 Electronic II Power Amplifiers Class C
Bipolar Junction Transistor
ac Load Line Analysis Maximum Symmetrical Swing
FET Small Signal Analysis ENGI 242 ELEC 222. March 2003FET Small Signal Bias2 g m at Q.
Figure 9.37 (a) Frequency–response analysis of the active-loaded MOS differential amplifier. (b) The overall transconductance Gm as a function of frequency.
Difference Between Voltage Amplifier and Power Amplifier
Analysis of Single Stage Amplifiers
Presentation transcript:

1 HBTs: high-frequency attributes LECTURE 16 Figures of merit f T : definition and derivation Design for high f T f max : definition and derivation Design for high f max

2 HF figures of merit HF figures of merit Sec Represent transistor by its small-signal equivalent circuit Consider frequency dependence of some current gain Consider frequency dependence of some power gain What are the associated figures of merit?

3 f T is measured under AC short-circuit conditions. We seek a solution for |ic/ib| 2 that has a single-pole roll-off with frequency. Why? Because we wish to extrapolate at -20 dB/decade to unity gain. f T from hybrid-pi equivalent circuit f T from hybrid-pi equivalent circuit What should this be? Sec. 14.4

4 Extrapolated f T Extrapolated f T Assumption: Conditions: Current gain: Extrapolated f T : Sec. 14.4

5 Improving f T Improving f T III-V for high g m Highly doped sub-collector and supra-emitter to reduce R ec Dual contacts to reduce R c and R B Lateral shrinking to reduce C's What is required to get f T ≈ 300 GHz ? Sec. 14.5

6 Circuit for derivation of f max Sec Justify these omissions Model with Thévenin equivalent circuit Add source and load

7 Developing an expression for f max Further conditions: Conjugately match at the output Conjugately match at the input Sec. 14.6

8 Improving f max Pay even more attention to R b and C  Sec. 14.6

9 Base-spreading resistance What is rho? Do you now see why HBTs have helped enable portable wireless products? What is R B,QNB ? Sec