Effective substrate cleaning method prior to thin film deposition Sami Kinnunen 3.3.2016.

Slides:

Advertisements

Similar presentations

MICROELECTROMECHANICAL SYSTEMS ( MEMS )

Advertisements

Sputtering Eyal Ginsburg WW46/02.

Thermo-compression Bonding

Conclusions Characterization of Self-Assembled Monolayers of Octadecanethiol and Dodecanethiol Joya Cooley, Brian Toney, Marion Martin.

Process Flow : Overhead and Cross Section Views ( Diagrams courtesy of Mr. Bryant Colwill ) Grey=Si, Blue=Silicon Dioxide, Red=Photoresist, Purple= Phosphorus.

Advanced Manufacturing Choices

Cleaning Methods & Cleanroom Procedures By Christiaan Bruinink and Meint de Boer.

NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Raghavan 1 Wet Etching and Cleaning: Surface Considerations.

ECE/ChE 4752: Microelectronics Processing Laboratory

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.

By: Derek McCurry.  The Lotus effect refers to the very high water repellency exhibited by the leaves of the lotus plant  Allows for self-cleaning,

Silicon Wafer Cleaning for EUV Reflectance Measurements by Cold, High-Pressure CO 2 Jet William Evans Brigham Young University.

Advanced Manufacturing Choices ENG Spring 2015, Class 6 Photolithography 6/9/2015.

Pattern transfer by etching or lift-off processes

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

A theoretical suggestion to make real clean material surface Sooyeon Yoon and Yup Kim Kyung Hee Univ. Dept. of Phys 년 한국물리학회 가을 학술 논문 발표회.

Microelectronics Processing

Process integration

24/10/02YACOV SHNEIDER WAFER CLEANING PROCESSING Yacov Shneider Processing Engineer Microelectronics Center Dept. of Electrical Eng. TECHNION.

An Initial Study of the Surface Contamination and Oxidation on Silicon Liz Strein, Amy Grigg, and Dr. David Allred.

Lesson 18 - Changing Mixtures You will investigate how adding salt affects the melting and boiling points of water. You will also investigate the melting.

SOIMUMPs Process Flow Keith Miller Foundry Process Engineer.

MEMs Fabrication Alek Mintz 22 April 2015 Abstract

Device Fabrication Example

Surface Preparation and Wet Processing

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #7. Etching  Introduction  Etching  Wet Etching  Dry Etching  Plasma Etching  Wet vs. Dry Etching  Physical.

Electroless 0,3 µm Au coating on thick Ni, deposited on Si a b a – surface morphology and Auger profiling spectroscopy b – cross section morphology and.

Lecture 4 Photolithography.

Micro-fabrication.

Semiconductor Device and Processing Technology

Andrew Jacquier Brigham Young University

Click mouse or hit space bar to advance slides All slides property of Cronos, all rights reserved Silicon Substrate Add nitride.

Wally’s dream job The first process to be done: Wafer Cleaning Wafers must be free of contamination at all stages of the antenna fabrication process.

Sample Preparation Techniques (Theory & Applications)- Deprocessing (i) Wet Chemical Etching.

II-Lithography Fall 2013 Prof. Marc Madou MSTB 120

Wally’s dream job The first process to be done: Wafer Cleaning Wafers must be free of contamination at all stages of the antenna fabrication process.

Introduction to Prototyping Using PolyMUMPs

Top Down Manufacturing

By: Joaquin Gabriels November 24 th,  Overview of CMOS  CMOS Fabrication Process Overview  CMOS Fabrication Process  Problems with Current CMOS.

NanoFab Trainer Nick Reeder June 28, 2012.

Top Down Method Etch Processes

Pretreatments for the Optimised Adhesion of Aluminium in Aerospace Applications G.W.Critchlow Department of Materials, Loughborough University, UK.

Surface Treatment Issues for RF Structure Fabrication Juwen Wang SLAC National Accelerator Laboratory X-Band Accelerating Structure Review November, 2014,

IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.

Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.

ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.

Etching of Organo-Siloxane Thin Layer by Thermal and Chemical Methods

Wafer Edge Exclusion Kevin Fisher.

ANODIC BONDING – WAYS OF SURFACE CLEANING

Etching: Wet and Dry Physical or Chemical.

© June 4, 2002 Dr. Lynn Fuller, Motorola Professor RIT Metal Gate PMOS Process Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER.

Electronic Protection

Side ViewTop View Beginning from a silicon wafer.

Process integration Wafer selection active role for the wafer ? passive role ? –thermal conductivity –optical transparency –flat,

(Chapters 29 & 30; good to refresh 20 & 21, too)

1 Disaster Management & Recovery Bad things happen to good people !

An Ultra-Dilute to Near-Zero Ammonia Process for Particle Removal NanoGreen Technology. All rights reserved.. INTRODUCTION TO Nano Green Technology,

Testing the adhesion of thin film to substrate

Selective area electrodeposition Johanna Valio

Surface Treatment Solutions for Low-k Dielectrics

Process integration 1: cleaning, sheet resistance and resistors, thermal budget, front end

FRONT END PROCESSES - CLEANING, LITHOGRAPHY, OXIDATION

Effective substrate cleaning before deposition

Nanowire Fabrication Based on Porous Alumina Template

Etch Dry and Wet Etches.

The International Conference On

Add nitride Silicon Substrate.

Photolithography.

Add nitride Silicon Substrate

Presentation transcript:

Effective substrate cleaning method prior to thin film deposition Sami Kinnunen

Substrate cleaning Substrate conditions affect the properties of the deposited thin film Adhesion, grain size… Classes of contamination Particles, metals, organics, native oxide Different techniques Chemical wet, physical wet, and dry cleaning

Chemical wet cleaning Acids, bases and solvents Dissolution/decomposition Etching Different chemicals for different contamination Example: RCA clean steps 1.Ammonia/peroxide 2.HF 3.Chloride/peroxide

Information Substrate cleaning is about removing unwanted particles from the surface, but also about leaving the surface in known and controlled condition For instance, in RCA clean the ammonia/peroxide step will leave the silicon wafer surface oxidized and hydrophilic whereas HF treatment results in a hydrogen-terminated hydrophobic surface Additionally, etching processes tend to make surfaces rougher, which leads to a larger number of nuclei in deposition, which in turn leads to a smaller grain size

Information The RCA steps: The wafers are rinsed in DI water between each step and after the cleaning process. Additionally, a preliminary clean-up treatment with hot H 2 SO 4 -H 2 O mixture (2:1) can be used for wafers having visible residues. StepChemical compositionFunctionTemperatureTime Ammonia/peroxideNH 4 OH:H 2 O 2 :H 2 O (1:1:5) Remove particles and organic contamination70-85 o C10-20 min HFHF:H 2 O (1: )Remove oxidesRoom30 s Chloride/peroxideHCl:H 2 O 2 :H 2 O Remove metallic/ionic contamination70-85 o C10-20 min

References Franssila, S. Introduction to Microfabrication (2nd Edition) John Wiley & Sons. ISBN: Kern, W. The evolution of silicon wafer cleaning technology Journal of the Electrochemical Society, Vol. 137:6. P ISSN: Seshan, K. Handbook of Thin-Film Deposition Processes and Techniques (2nd Edition) William Andrew Publishing. ISBN: