Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. Schematic flow diagram of CER evaluation methodology as implemented on software “CERDEMO” developed by our group. It starts with several top-down CD SEM images, outputs CER and dimensional parameters and functions taking into account the circular topology of contact edges and its implications. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. (a) Effect of EUV dose on CD in EUV resist with three different PAG and quencher concentration and (b) effect of EUV dose on CD in EUV resist with three different sensitizer concentrations. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. CD variation versus dose [3(a) and 3(c)] and CD [3(b) and 3(d)] for all resist formulations with various PAG, quencher and sensitizer concentrations shown in Table 2. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. CD variation versus sensitizer (a), PAG and quencher (b) concentrations in the resist formulations used in the paper. The linear relationship of CD variation with 1/√dose for sensitizer dependencies is demonstrated in (c) revealing the dominance of PSN effects. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. A schematic illustration of the two scenarios proposed by Anderson and Naulleau in Ref. 26 for the contributions of PSN and PAG statistics to LER/LWR. In the first scenario the number of activated PAG molecules in the exposed film is smaller than their total number and LER/LWR is mainly determined by PSN effects. Contrary, when the exposure dose is capable of activating all PAG molecules then LER/LWR is defined by the statistical noise of the positions of PAG molecules in the resist and we are in scenario 2. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. Schematic representation of the transition from scenario 2 to scenario 1 as PAG loading increases and sizing dose drops down. The schematic diagram in (a) resembles the PAG- formulation where the PAG concentration is small and the exposure dose activates all PAG molecules in the exposed area (scenario 2). The variation in CD values among contacts (CDU) comes from the statistical noise of PAG positions. When PAG concentration increases as in (b) and ST formulation, we can still stay in scenario 2 (photons activate all PAG molecules) but we have better statistics in the distribution of PAG molecules, less chemical noise and consequently smaller CDU. In (c) the PAG loading has increased more similarly to PAG+formulation and now the reduced sizing dose is not capable to activate all PAG molecules. In this case CDU is determined by PSN effect, which is increased with respect to (b) (ST) due to the drop of the required sizing dose [see Fig. 4(b)]. The enhancement of PSN leads to the rise of CDU value. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. RMS versus dose [(a) and (c)] and CD [(b) and (d)] for all resist formulations with various PAG, quencher and sensitizer concentrations shown in Table 2. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. Correlation length ξ versus dose [(a) and (c)] and CD [(b) and (d)] for all resist formulations with various PAG, quencher and sensitizer concentrations shown in Table 2. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. PS of the CER with CD ranging from to nm. Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM

Date of download: 6/18/2016 Copyright © 2016 SPIE. All rights reserved. Schematic presentation of contact proximity effect. (a) Directions in a real contact pattern of enhanced proximity of contacts. (b) No effect of contact proximity on contact edge morphologies is observed when they are distant, and (c) when contacts come close their edges are “stretching” along the proximity directions due to aerial image or acid kinetics interactions. This causes low frequency undulations (“squareness”) in the contact shape and therefore an increase of RMS value (cf. Fig. 7). Figure Legend: From: Critical dimension uniformity and contact edge roughness in extreme ultraviolet lithography: effect of photoacid generator, sensitizer and quencher J. Micro/Nanolith. MEMS MOEMS. 2013;12(2): doi: /1.JMM