Performance test of the SOI pixel detector Hideki MIYAKE (Osaka University) for SOIPIX group Hideki MIYAKE (Osaka University) for SOIPIX group Oct.31, 2006 DPF-JPS joint

Related talks Introduction Radiation damage test Introduction Radiation damage test H.Ishino TCAD simulation study M.Hazumi Performance test This talk

Oct.31, 2006 DPF-JPS joint Y. Arai *, Y. Ikegami, H. Ushiroda, Y. Unno, O. Tajima, T. Tsuboyama, S. Terada, M. Hazumi, H. Ikeda A, K. Hara B, H. Ishino C, T. Kawasaki D, H. Miyake E, G. Varner F, E. Martin F, H. Tajima G, M. Ohno H, K. Fukuda H, H. Komatsubara H, J. Ida H, H. Hayashi H KEK 、 JAXA A, U. Tsukuba B, TIT C, Niigata U. D, Osaka U. E, U. Hawaii F, SLAC G, OKI Elec. Ind. Co. H (*)—contact person Y. Arai *, Y. Ikegami, H. Ushiroda, Y. Unno, O. Tajima, T. Tsuboyama, S. Terada, M. Hazumi, H. Ikeda A, K. Hara B, H. Ishino C, T. Kawasaki D, H. Miyake E, G. Varner F, E. Martin F, H. Tajima G, M. Ohno H, K. Fukuda H, H. Komatsubara H, J. Ida H, H. Hayashi H KEK 、 JAXA A, U. Tsukuba B, TIT C, Niigata U. D, Osaka U. E, U. Hawaii F, SLAC G, OKI Elec. Ind. Co. H (*)—contact person Financial Support by KEK Detector Technology Project SOIPIX collaborators KEK Detector Technology Project : [SOIPIX Group]

Oct.31, 2006 DPF-JPS joint List of 2005 TEG NameAMPTEG Preamp, Time over threshold, comparator, active feed back etc. RADTEG Pixel, transistor, ring oscillator PIXTEG 32x32 pixel array with readout STRIPTEG Short strip sensor HAWAIITEG Hard X-ray compton polarimeter Our fully-Depleted CMOS SOI TEG is fabricated by OKI Electric Industry Co. Ltd. - commercial technology with 150nm rule

Oct.31, 2006 DPF-JPS joint Performance test OUTLINE Strip TEG Strip TEG I-V characteristics I-V characteristics Laser pulse scan Laser pulse scan Pixel TEG Pixel TEG I-V characteristics I-V characteristics Laser image view Laser image view Beta source Beta source Strip TEG Strip TEG I-V characteristics I-V characteristics Laser pulse scan Laser pulse scan Pixel TEG Pixel TEG I-V characteristics I-V characteristics Laser image view Laser image view Beta source Beta source

Oct.31, 2006 DPF-JPS joint Strip TEG This one! 2.5mm We fabricated two types of chips with a different resistivity. (standard and high resistive type) This time we evaluated the high resistive type. (N-type ~700Ωcm ~6 ✕ cm -3 ) We fabricated two types of chips with a different resistivity. (standard and high resistive type) This time we evaluated the high resistive type. (N-type ~700Ωcm ~6 ✕ cm -3 ) Short p + -strip (length:460um) Short p + -strip (length:460um) Window for Light Illumination Bonding Pad

Oct.31, 2006 DPF-JPS joint w/FET electrodes Breakdown Substrate-strip I-V (V) I(A) Strip I-V characteristics Different strip structures Different strip structures Strip width Strip width FET electrodes FET electrodes w FET I I I I p-n junction exists Breakdown:50~60V p-n junction exists Breakdown:50~60V n p-strip Type7 Type3 Type1 Type5 Type6 Type2 Type4 Type8 ohmic w=40um w=30um w=10um strip-strip I-V (V)

Oct.31, 2006 DPF-JPS joint Laser Pulse 270KΩ 50MΩ n-bias p Amp (CS527) SoI chip Laser We used two types laser: Diode laser Hamamatsu PLP-01 (λ=859nm) Diode laser PicoQuant PDL-800B (λ=980nm) Laser Amp Microscope SoI

Oct.31, 2006 DPF-JPS joint Pulse Shape Focused (microscope) Focused (microscope) Only one channel shows the pulse  good channel separation! Only one channel shows the pulse  good channel separation! nm Note:Most right strips are coupled 859nm Unfocused Unfocused Pulses are seen at all 3 channels Pulses are seen at all 3 channels

Oct.31, 2006 DPF-JPS joint Charge collection efficiency Focused Laser 980nm  No saturation until breakdown Not yet fully depleted Hot Spot search is necessary  later Pulse height depends on V back

Oct.31, 2006 DPF-JPS joint Laser Scan Focused 980nm Laser is injected on movable stage. Focused 980nm Laser is injected on movable stage. Two windows for light injection Two windows for light injection When laser light hits the readout metal traces, the observed charge reflect the light When laser light hits the readout metal traces, the observed charge reflect the light Reasonable charge collection and separation between strips is confirmed. Reasonable charge collection and separation between strips is confirmed. Laser 980nm SOI chip

Oct.31, 2006 DPF-JPS joint CMOS Active Pixel Sensor Type 20  m x 20  m 32 x 32 pixels Pixel TEG Oct.31, 2006 DPF-JPS joint

6"  MPW wafer 2.5 mm (chip) 20  m (pixel) Window for Light Illumination (5.4 x 5.4 um 2 ) Window for Light Illumination (5.4 x 5.4 um 2 ) p+ junction Storage Capacitance (100 fF) Storage Capacitance (100 fF) Pixel Layout

Oct.31, 2006 DPF-JPS joint Pixel first signal! Weak Light Strong Light No Light The ramp up speed differs depending on the light intensity. V back =5V V back =5V Flashlight Flashlight Oct.31, 2006 DPF-JPS joint Reset-Integrate-Readout

Oct.31, 2006 DPF-JPS joint Pixel I-V characteristic Breakdown:~100V Oct.31, 2006 DPF-JPS joint

Hot Spot observed with infrared camera corner of the bias ring I = 40  A, T = 1 min  Smooth the corner and move the ring inward at next submission. Hot Spot search Breakdown:~100V Oct.31, 2006 DPF-JPS joint

Plastic Mask Laser (670 nm) Vdet = 10 V Exposure Time = 7  s Photo Image 32x32 image view with 670nm Laser and plastic mask 32x32 image view with 670nm Laser and plastic mask Oct.31, 2006 DPF-JPS joint (mm) (mm)

Oct.31, 2006 DPF-JPS joint 90 Sr source Pixel sensor Response to beta source Performance test as a particle detector Oct.31, 2006 DPF-JPS joint Output of one channel is observed with oscilloscope. Output of one channel is observed with oscilloscope.

Oct.31, 2006 DPF-JPS joint V det = 10 V W depletion ~ 44  m Q ~ 3500 e (0.6 fC) Response to beta source The voltage jump corresponds to particle hit. The voltage jump corresponds to particle hit. Oct.31, 2006 DPF-JPS joint Expected signal amplitude was observed for  -ray.

Oct.31, 2006 DPF-JPS joint We tested basic performance of SOI detector fabricated in a commercial 0.15  m SOI CMOS process. Short strip sensor shows p-n junction and good channel separation with infrared laser light. Pixel sensor shows good image ‘KEK06’ with red laser light. Signal for  -ray from 90 Sr is observed. Break down voltage of present pixel sensor is about 100V and hot spot is identified. Oct.31, 2006 DPF-JPS joint SummarySummary

Let’s enjoy Hawaii!

Oct.31, 2006 DPF-JPS joint Let’s enjoy Hawaii! Oct.31, 2006 DPF-JPS joint

補足

Hot Spot search for Strip TEG Hot spots are seen at edge of strips

Oct.31, 2006 DPF-JPS joint PD vs. FD IBM PowerPC, AMD Athlon, Sony Cell … OKI Radio Controlled Wrist Watch (CASIO)

Oct.31, 2006 DPF-JPS joint '05 10 Submission Layouts

Oct.31, 2006 DPF-JPS joint Previous Activity Processed in Lab. with ~3  m technology. Ended at 2004?

Oct.31, 2006 DPF-JPS joint Contact & Sheet Resistance [Sheet R] n+ : 33  /square p+ : 136  /square [Contact] (0.16x0.16um 2 ) n+ : 87  p+ : 218  Hi-R (> 1k  cm) Std. wafer (p+, ~13  cm) Std. wafer (p+, ~13  cm) Hi-R (> 1k  cm) p+ contact n+ contact

Oct.31, 2006 DPF-JPS joint Pixel Leak current I ~ 150 fA/pixel

Oct.31, 2006 DPF-JPS joint V dependence of the pulse height Note:Ch2  Ch4 are swapped Note:Ch2  Ch4 are swapped Unfocused Laser 859nm Focused Laser  No saturation until breakdown 980nm