Atlas 3D – 19 janv 2010 Patrick Pangaud ATLAS_3D ATLAS_3D by CPPM Motivations –Démontrer l’intérêt du 3D pour l’accroissement de la fonctionnalité pour une surface donnée fixe The « More Moore’s Law » –Mise en œuvre auprès d’un détecteur comme les pixels ATLAS Plus petits pixels Mélange de technologies Interfaçage Sensor-Asic Réalisations –Choix du couple Tezzaron-Chartered –Démonstrateur 3-D « à la » FEI4 –Validation de la technologie CHARTERED Terminologie : FEC4_Px : Front-End Chartered Proto x FETC4_AEDS : Front-End Tezzaron-Chartered Analog Electron Digital Simple FETC4_AEDC : Front-End Tezzaron-Chartered Analog Electron Digital Complex FETC4_A : Front-End Tezzaron-Chartered Version A

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Status Remember : P2 from P1 Optimization of Rad-Hard block and SEU tolerance blocs Optimization of Analogue part vs Chartered Technology But to follow the IBM release FEI4_P1 chip, we kept the same functionalities Reduce the pixel size to 125µmPlan Analog Pixel and analog functions Global register Digital Buffers SEU latch Next … FEC4_P1 : submitted in Fev 2009 FEC4_P2 : submitted in Nov 2009

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4 : Pixel overview ( size 50 x 166) FEC4_P1 FEC4_P2 1st SEU LATCH version FEC4_P2 2nd SEU LATCH version From FEI4_P1 : Basically Technology translation from IBM to Chartered FEC4_P2 : Optimization of analog part and a new SEUlatch FEC4_P2 : Optimization of analog part and a second new SEUlatch

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Main changes in analogue pixel The objectives were : – Not to change the structure – Simulate and adjust size of transistors

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Preamplifier FEC4-P1 : –MN2 : 3µ/200n, nf=2, nmos_1p5_lvt –T21 : 6,25µ/300n, nf=2, nmos_1p5_nat FEC4-P2 : –MN2 : 5,5µ/300n, nf=1, nmos_1p5_nat –T21 : 5,5µ/300n, nf=2, nmos_1p5_nat  For Process variation : Better behavior with the same kind of transistor…

Atlas 3D – 19 janv 2010 Patrick Pangaud To deal with increased Vt and to improve the linearity : Nf = 4 To increase the linearity : Bulk and source connected only 1 transistor (not 2 in series) with the same equivalent size FEC4_P2 : Amplifier2

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Simulation results typical process linearity : Noise from 60 e- to 200 e- depending on : –the process case –the capacitor value of the sensor (from 0 to 400fF) –The sensor current (from 0 to 100nA) ampli2 preampliampli2 preampli

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Global Register Due to a defect working after irradiation, we decided to replace the SEU_LATCH cell by a LATCH Standard Cell from ARM.

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Global register cell FEC4_P2 : Global register cell Arm latch Port definition G : Load signal, the latch hold signal from DFF while the load signal is”0”. SN : Connect with a TIETHL. So the state always is “1”. RN : Clear signal. Connect it with an ‘Not gate’. So the ltchclr is high positive. D : Connect with DFF’s output ‘Q’. Q : The output of latch. Follow by a buffer. QN : Not used. Functions: RNSNGDQ[n+1]QN[n+1 ] XQ[n]QN[n] 01XX01 10XX10 00xX10

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : layout of the Global register cell FEC4_P2 : layout of the Global register cell 49.1u*82.3u of FEC4_P1 per 16 cell 49u*82.3u of FEC4_P2 per 16 cell

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Modification of Digital Buffers

Atlas 3D – 19 janv 2010 Patrick Pangaud Fist stage, N: 0.44/0.14 P: 1.25/0.14 Second stage, N: 4.5/0.14 P: 13.5/0.14 FEC4_P1 : The Digital output buffer

Atlas 3D – 19 janv 2010 Patrick Pangaud Fist stage, N: 4.625/0.13 P: 12/0.13 Second stage, N: /0.13 P: 36/0.13 Wellguardring for PMOS Enclosed Layout Transistor Guardring for NMOS FEC4_P2 : The Digital output buffer

Atlas 3D – 19 janv 2010 Patrick Pangaud Frequency of the input signal: 1/20ns (50MHz). Mode transistors: typical. Load capa = 10p. P1 P2 rise time: 4,494ns fall time: 5,341ns rise time: 1.786ns, fall time: 1.657ns FEC4_P2 : Simulation results of the Digital output buffer

Atlas 3D – 19 janv 2010 Patrick Pangaud 20psftypicalfs rise time3,1133,528 4,07 4 fall time3,7753,265 2, p rise time3,8464,401 5,08 3 fall time4,7334,1033,59 1 FEC4_P2 : More simulation results of the Digital output buffer

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : SEU Latch in Pixel cell Some ideas… –Optimization of the SEU Latch block –New layout –With and without ELT –Try the Triple Nwell But only new layout and with and without ELT have been implemented

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : SEU_LATCH (DICE) version 1 Added buffers at the inputs and outputs and load. Removed the Reset function. Linear Transistors used + guardring All corners simulation are OK

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : SEU_LATCH (DICE) version 2 Added buffers at the inputs and outputs and load. Removed the Reset function. Replaced the Load switch by a Tgate ELT Transistors used + guardring All corners simulation are OK

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : SEU_LATCH (DICE) version 3 Added buffers at the inputs and outputs and load. Removed the Reset function. Add Triple well and removed the Dual function ELT Transistors used + guardring Very bigger cell Not implemented. Not enough time ….. But very exiting approach

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Other changes Current mirrors at the output of global DAC : L is increased (for a small improvement of matching and noise) (for example 1µ/1µ becomes 1µ/4µ…) Analogue buffers : → Not enough time to design a real output buffer. → Layout is drawn with enclosed NMOS. Layout correction For FEC4-P1, suba, subd, gnda and gndd are not correctly separated. → This is corrected for P2. PADs ring : new approach (the same used for FETC4) → suba and subd are separated from gnd and sub of ESD protection. → use of dedicated PADs for VDDAIO, VDDDIO and GNDAIO, GNDDIO (PADs power).

Atlas 3D – 19 janv 2010 Patrick Pangaud FEC4_P2 : Conclusion …. Optimization of design : OK Repaired Test transitors : OK Checked the ESD Pads : OK Reduced the pixel size : NOK Added a real analog buffer : NOK Awaiting test results (dies arrived previous week)

Atlas 3D – 19 janv 2010 Patrick Pangaud FETC4_xx : MPW 3D-Fermilab 26mm 31mm Technology : Chartered 0,13µm LP + Tezzaron SuperContact ILC ATLAS LBNL

Atlas 3D – 19 janv 2010 Patrick Pangaud FETC4_xx : ATLAS Band -C FETC4-AE SEU-3D FETC4-DS SEU-3D TSV Daisy Chain + BI TSV vs Transistors + Capacités TSV vs Transistors + Capacités Contraintes Mécaniques DFF + Trans + Cap Contraintes Mécaniques DFF + Trans + Cap

Atlas 3D – 19 janv 2010 Patrick Pangaud FETC4_xx : ATLAS Band -D FETC4-AE FETC4-DC OmegaPix Analog OmegaPix Analog OmegaPix Digital OmegaPix Digital TSV vs Transistors Capa TSV avec Bump TSV vs Transistors Capa TSV avec Bump TSV vs Transistors

Atlas 3D – 19 janv 2010 Patrick Pangaud FETC4_xx : LBNL- Fermilab band -G FETC4-AH FETC4-DS

Atlas 3D – 19 janv 2010 Patrick Pangaud FETC4_xx : 3D ATLAS projets FETC4 –AE (CPPM) : pareil que FEI4_Proto1, mais en Chartered 0,13LP FETC4-DS (CPPM) : Shift Register + compteur +readout data. "Drum registers" FETC4-DC (Bonn-CPPM) : Lecture à double colonnes "à la FEI4" FETC4-AH (LBL-CPPM): pareil que FEI4_Proto1 mais avec collection de trous. SEU-3D (CPPM) : circuit numérique résistant au SEU " à la FEI4" Multiples structures de tests (CPPM) –Daisy chain des TSV + BI (avec mesure de la résistance) –Capacités des TSV avec ou sans BackMetal, avec ou sans Bump –Transistors de test (Linéaire et ELT) proches des TSV –Effets de stress mécaniques sur les composants (Trans, Capa, Res, DFF)

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A Motivation of a 3D-IT approach in HEP –smaller pixels and more functionality by pixel –Mixed technologies –Replacement for pixel bump bonding (Finer pitch bonding? Lower cost bonding?) Higher performance pixels detectors Motivation of using Tezzaron-Chartered technology –Seems the only low-cost foundry at this time –Large reticule (26 mm x 31 mm) –Chartered (2D) MPW

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A Organization –Same FEI4_A specification but with half-size pixel –Dedicated collaboration ‘à la’ FEI4_A. –Most important blocks should be implanted Dedicated Blocks prototype –Prototype approach by using Chartered MPW

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : Tezzaron-Chartered in HEP 3D assembling of 2 tiers (T1 and T2) Tezzaron : –Via first. –Super-Contacts (Through Silicon contacts) are formed before the BEOL of Chartered technology. –Back-side metal for bonding (after thinning). –2 wafers (tier 1 and tier 2) are stacked face to face with Cu-Cu thermo-compression Chartered: –0.13LP technology with standard and low VT transistors. –Zero Vt transistors. –Deep nwell nmos. – I/O transistors for 1.8 to 3.3V operation. –MiM capacitor (single mask : 1fF/µm²). –5 levels of metals and a redistribution of Top metal layer (M6) for bonding. –A 26 x 31 mm reticule size.

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : specifications To be compatible with FEI4_A sensor

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : building blocks From FETC4_P1 ( to be finalized) To be synthesized with ARM cells To be developed ( 2D MPW to validate them) Which blocks into T1/T2 ?? Same FEI4 blocks, but only essential blocks, first.

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : organisation CAD tools –Cadence IC6.1.4 Last 0.13LP Chartered PDK –Cliosoft –Calibre 2009 –Customized ARM cells Chip development approach –The same organization than FEI4_A –Shared project –Fundamental blocks would be implemented. –2D Chartered MPW run to validate new cells.

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : Chartered MPW 2010 FEC4_P1 and FEC4_P2 made in 2009, to validate the technology’s translation FEC4_P3 could validate more functionalities closed the FEI4_A final design FEC4_P3 Next submission dates

Atlas 3D – 19 janv 2010 Patrick Pangaud FE TC 4_A : 3D-run Submission FERMILAB MPW_2 21x20 mm ATLAS The FETC4_A development could be start soon. The team can grow later, but the design strategy should be fixed before. Realistic schedule to be defined according to the design’s team ATLAS or CMP MPW_2 ? 21x20 mm ATLAS