Radiation Tests Performed on GaNs

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Presentation transcript:

Radiation Tests Performed on GaNs

Working Group: INFN Roma1 DIEI – University of Cassino and Southern Lazio - Cassino ENEA - Centro Ricerche Casaccia Researchers: Carmine Abbate Stefania Baccaro Giovanni Busatto Salvatore Fiore Francesco Iannuzzo Annunziata Sanseverino Francesco Velardi Jeff Wyss Ph.D. Student: Davide Tedesco Laboratory Technician: Tomasino Iovini

GAMMA RAYS IRRADIATION

THE IRRADIATION FACILITY CALLIOPE - γ-source at ENEA Centro Ricerca Casaccia

GaN: Gamma Test Conditions Part number EPC2015, 25 sampled tested. Measurements were carried out on fresh and irradiated devices (pre-and post-annealing. Samples Day of exposure Total Dose [Gy] D35 - D39 19 10885.1 D5, D16 - D19 9 5156.1 D30 - D34 3 1718.7 D20 - D24 2 1145.8 D25 - D29 1 572.9

GaN: Gamma Dose Effect

HEAVY IONS IRRADIATION

THE IRRADIATION FACILITIES 16MV TANDEM XTU 15MV TANDEM XTU I.N.F.N. – L N L LEGNARO (PD) I.N.F.N. – L N S CATANIA

Heavy Ions Experimental Set Up

Heavy Ions Experimental Procedure SMU2 SMU1 Fast Sampling Oscilloscope

STATISTICAL ANALYSIS TIME DOMAIN WAVEFORMS SCATTER PLOT NUMERICAL INTEGRATION DISTRIBUTION FUNCTION -LIKE DISTRIBUTION FUNCTION PARAMETERS EXTRACTION MEAN CHARGE vs BIAS VOLTAGE

HEAVY IONS IRRADIATION EPC2015

Irradiation after one week annealing 127I @276MeV EPC2015 Irradiation after one week annealing

Irradiation after 570Gy gamma dose 127I @276MeV EPC2015 Irradiation after 570Gy gamma dose

Irradiation after 1.72kGy gamma dose 127I @276MeV EPC2015 Irradiation after 1.72kGy gamma dose

Irradiation after 5.15kGy gamma dose 127I @276MeV EPC2015 Irradiation after 5.15kGy gamma dose

Irradiation after 10.9kGy gamma dose 127I @276MeV EPC2015 Irradiation after 10.9kGy gamma dose

HEAVY IONS IRRADIATION EPC1007

Drain leakage current after irradiation 127I @276MeV EPC1007 Drain leakage current after irradiation

Gate leakage current after irradiation 127I @276MeV EPC1007 Gate leakage current after irradiation

Drain leakage current during irradiation 127I @276MeV EPC1007 Drain leakage current during irradiation

Gate leakage current during irradiation 127I @276MeV EPC1007 Gate leakage current during irradiation

Gate and drain leakage current during irradiation 127I @276MeV EPC1007 Gate and drain leakage current during irradiation

127I @276MeV EPC1007

127I @276MeV EPC1007

127I @276MeV EPC1007

127I @276MeV EPC1007

HEAVY IONS IRRADIATION EPC2012

127I @276MeV EPC2012

Conclusions Low voltage GaN MOSFET are tolerant to high irradiation doses and Single Event Effects 100V and 200V devices are sensitive to Single Event Effects (Single Event Burn-out) In GaN power MOSFETs, the charge generated during heavy ion impact is very sensitive to the location of the impact

Future Work Proton irradiation Neutron irradiation Irradiation with different heavy ion species 2D and 3D FEM simulation for understanding the mechanisms of the charge generation and failure mechanisms Identifying the volume sensitive to the Single Event Effects

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