Philips LumiLEDs LUXEON UV I( ,  ) = cos(  ) The emitting surface looks smaller at an angle.

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Presentation transcript:

Philips LumiLEDs LUXEON UV

I( ,  ) = cos(  ) The emitting surface looks smaller at an angle.

Unit: mm

Lextar Electronics 隆達電子

Tekcore 泰谷光電 HUUV13 x 13380~420 nm1~6 mW 20 mA FUUV40 x 40380~420 nm40~75 mW350mA

Item #Grooves/mmBlaze AngleDispersion (nm/mrad)Size (mm) 300 nm Blaze Wavelength GR ° 34' x 12.7 GR ° 34' x 25 GR ° 9' x 50 GR ° 22' x 12.7 *All gratings utilize an Aluminum (Al) reflective coating and are measured in the Littrow mounting configuration. The Parallel polarization is parallel to the grating grooves. 1x $ x $179.60

Item #Grooves/mmBlaze AngleDispersion (nm/mrad) Size (mm)Efficiency Curves* 400 nm Blaze Wavelength GR ° 53' x 25 GR ° 53' x 50 UV-Enhanced Aluminum-Coated Concave Mirrors 1x $102.00

CM F01 - Ø2" UV Enhanced Al-Coated Concave Mirror, f=50.0 mm $78.00 CM F01 - Ø2" UV Enhanced Al-Coated Concave Mirror, f=100.0 mm $78.00 CM F01 - Ø2" UV Enhanced Al-Coated Concave Mirror, f=150.0 mm $78.00 CM F01 - Ø2" UV Enhanced Al-Coated Concave Mirror, f=200.0 mm $ x

FM204 - UV Cold Mirror, Ø2", AOI = 45°, 1 mm Thick $69.54 UV Cold Mirrors, AOI = 45° Item #FM04, FM204 Angle of Incidence45° 50% Cut-Off- Transmission>85% Avg from 600 to 1200 nm Reflection>90% Avg from 325 to 475 nm Diameter Tolerance+0.00/-0.10 mm Center Thickness Tolerance±0.1 mm 2x

Newport 50329AL Off-Axis Replicated Parabolic Mirror, 1.50in Dia, 2.00in EFL, Protected Aluminum Model Effective Focal Length (in.) Focal Length (in.) Height [in. (mm)] Coating 50328AL (40.64) Protected Aluminum 50328AU (40.64) Bare Gold 50329AL (42.95) Protected Aluminum 50329AU (42.95) Bare Gold 50338AL (41.15) Protected Aluminum 50338AU (41.15) Bare Gold 50331AL (40.56) Protected Aluminum 50331AU (40.56) Bare Gold 50332AL (40.26) Protected Aluminum 50332AU (40.26) Bare Gold 2x 1x

286 nm (15 o /-5 o ) 452 nm (21 o /-5 o ) 600 l/mm Blazed 5.15 o

FDS010 - Si Photodiode, 1 ns Rise Time, nm, Ø1 mm Active Area $42.10 FGAP71 - GaP Photodiode, 1 ns Rise Time, nm, 4.8 mm2 Active Area $85.90

PDA10A - Si Fixed Gain Detector, nm, 150 MHz BW, 0.78 mm2, 120 VAC Detetor Types: Si Wavelength Ranges from 200 to 1100 nm Low-Noise, Wide Band Amplifiers Fixed Gain 0 to 10 V Output Compatible with SM1 and Some SM05 Series Products Threaded Mount for Ø1" (Ø25 mm) Optics Included Power Supply Included The PDA10A Amplified Photodetector is housed in a compact, low profile package, and is designed for the detection of light in the UV to NIR spectrum. The module has a thin profile to allow access to light paths with a minimal footprint. All connections and controls are located perpendicular to the light path, providing increased accessibility. Amplification is provided by low noise transimpedance or voltage amplifiers that are capable of driving 50 Ohm loads. Signal output is via a BNC connector. Specifications Sensor: Si (UV-NIR) Active Area: 0.8 mm2 (Ø1.0 mm) Wavelength Range: 200 – 1100 nm Peak Response: nm Bandwidth DC-150 MHz NEP Range (W/Hz1/2): 5.5 × Rise Time: 2.3 ns $283.00

Model APD110A2 uses an UV-enhanced Silicon Avalanche Photodiode with a detector active area diameter of 1 mm, operating from 200 – 1000 nm. Figure 3 shows a typical responsivity curve for an M-factor of 1. Please note, that APD110A2 M-factor is factory set to M=50 at room temperature, which will increase responsivity by a factor of 50 and slightly shift peak responsivity to shorter wavelength. 5 x10 4 V/A with 50 Ω Termination For APD110A2, the overall output voltage noise (VRMS) is ~1.65 mVRMS. $1,034.50