Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. Transmitted intensity at the resist top surface I0z+(0) for TE waves [black (thicker) line] and TM waves (red line). Here, λ=193nm, θa=0 deg, Na=1 (air), and Nb=N0=1.690+i0.024 (resist). The incident intensity Iaz+ is normalized to 1 for either TE or TM waves. Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (Nonabsorptive TARC.) Solution of perfect one-layer TARC with nonabsorptive material. Here, λ=193nm, Na=1 (air), Nb=N0=1.690 (resist). Black (thickest) line is for TE waves, and red (thicker) or blue line is for TM waves. Note that there are two solutions for TM waves. Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (TARC for immersion lithography.) Solution of perfect one-layer TARC with nonabsorptive material for TE waves in immersion lithography. Here, λ=193nm, Na= (water), Nb=N0=1.690+i0.024 (resist). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (Absorptive TARC.) Solution of perfect one-layer TARC with absorptive materials for TE waves. Here, λ=193nm, Na=1 (air), Nb=N0=1.690+i0.024 (resist). Black (thicker) line stands for κ−1=0. Blue to red line stands for κ−1 being from 0.1 to 1.0 in steps of 0.1, respectively (from down to up for n−1, from up to down for d−1). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (Performance of absorptive TARC.) Calculated (a) absolute value of the reflection coefficient (into the resist) at the resist top surface ∣ rA− ∣ for TE waves, (b) transmitted intensity at the resist top surface for TE waves I0z+E(0), and (c) the ratio of transmitted intensity at the resist top surface for TM waves to that for TE waves I0z+M(0)∕I0z+E(0) at each σNA with optimized TARC shown in Fig.. Black (thicker) lines stand for κ−1=0. Blue to red lines stand for κ−1 being from 0.1 to 1.0 in steps of 0.1, respectively. Here, λ=193nmNa=1 (air), Nb=N0=1.690+i0.024 (resist). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (Performance of commercialized TARC.) Calculated (a) absolute value of the reflection coefficient (into the resist) at the resist top surface ∣ rA− ∣ for TE waves, (b) transmitted intensity at the resist top surface for TE waves I0z+E(0), and (c) the ratio of transmitted intensity at the resist top surface for TM waves to that for TE waves I0z+M(0)∕I0z+E(0). Black (thicker) lines stand for no TARC. Red lines stand for commercialized TARC, of which d−1 is chosen to minimize ∣ rA− ∣ at each σNA. Here, λ=193nm, Na=1 (air), N−1=1.500 (TARC), Nb=N0=1.690+i0.024 (resist). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (Performance of TARC for immersion lithography.) Calculated (a) absolute value of the reflection coefficient (into the resist) at the resist top surface ∣ rA− ∣ for TE waves, (b) transmitted intensity at the resist top surface for TE waves I0z+E(0), and (c) the ratio of transmitted intensity at the resist top surface for TM waves to that for TE waves I0z+M(0)∕I0z+E(0). Black (thicker) lines stand for no TARC. Red lines stand for optimized nonabsorptive TARC at each NA, as shown in Fig.. Here, λ=193nm, Na= (water), Nb=N0=1.690+i0.024 (resist). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (a) Red (thicker) line shows ∣ rA− ∣ by employing TARC optimized at σNA=0. Here, N−1=1.559 and d−1=32.7nm. Blue line shows ∣ rB+ ∣ by employing BARC optimized at σNA=1.4. Here, N1=1.864+i0.300 and d1=37.4nm. (b) Red (thicker) line shows ∣ rA− ∣ by employing TARC optimized at σNA=1.4. Here, N−1=1.505 and d−1=89.4nm. Blue line shows ∣ rB+ ∣ by employing BARC optimized at NA=0. Here, N1=1.903+i0.360 and d1=74.2nm. Black (thickest) line shows ∣ rA− ∣∣ rB+ ∣. Here, λ=193nm, Na= , N0=1.690+i0.024, Nb=0.863+i All calculation results shown in figures are for TE waves. Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. Comparing ∣ rA− ∣ of TARC optimized in our proposed way [black (thicker) line] and TARC optimized at normal incidence (red line). Here, λ=193nm, Na= , N0=1.690+i All calculation results shown in the figure are for TE waves. Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /

Date of download: 7/2/2016 Copyright © 2016 SPIE. All rights reserved. (a) For the red line, the swing effect is minimized so that energy absorbed in the resist decreases monotonically with the resist thickness. Here, λ=193nm, θa=22.1deg, Na=1 (air), N0=1.690+i0.024 (resist), N1=1.840+i0.342 (BARC), d1=79.8nm, Nb=0.863+i2.747 (silicon). For the black (thicker) line, the swing effect is optimized to compensate the bulk effect, so that there is a flat region for energy absorbed in the resist of at least 20nm in extent at a resist thickness around 280nm. Here, only d1 is changed to 78.2nm. We consider only TE waves. (b) Only d1 is changed to 81.5nm for the black (thicker) line, otherwise, it is the same as (a). Figure Legend: From: Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF J. Micro/Nanolith. MEMS MOEMS. 2005;4(4): doi: /