Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Inital PAG density taken as input for the PEB simulation compared to the underlying continuous PAG distribution and the aerial image averaged along the line. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Resulting height profile when fitting to a plane along the sidewall for MD based polymers of 40r.u. size and D=2.5nm2∕s. The colorbar shows the deviation from the plane in nanometers. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Height-difference correlation functions for 10 and 40r.u. MD based polymers are shown. The increase in correlation length from 7to12nm for large polymers is visible. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Correlation length lc and critical exponent α for all repeat units of the MD based polymers for D=2.5nm2∕s are shown. The correlation length decreases for smaller polymers. The critical exponent decreases as well for smaller polymers whereas for 10r.u. an increase can be observed. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Sidewall roughness 3σ as a function of increasing polymer size and PAG concentration for D=2.25nm2∕s. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. The corresponding polymer size distribution of all polymers in the simulation region. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Resulting sidewall roughness for the single r.u. polymer and the acid-breakable polymer is shown. The single 60r.u. polymers yield a larger roughness value than the acid breakable polymers for larger diffusion lengths. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Flow diagram of development algorithm. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. (a) Von Neumann rejection. The probability for a cell x to be selected is given by its reactivity weight p(x)=[w(x)]∕[∑x′p(x′)]. An accessible cell is drawn from its probability distribution p(x) inside the reaction front by comparing the values of p(x) and a (arbitrary) function α(x)p(x), here assumed as α=maxx{p(x)}. The acceptance ratio is defined by the fraction of the areas below the two functions. The shaded area thus shows the relative probability of rejection. (b) In a logarithmic class the reactivity between different cells in the same class differs only by a factor of 2. The acceptance ratio is significantly increased. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Picture of the links between polymers, lattice cells, and classes. Each cell is assigned to its appropriate logarithmic class. Every cell list contains information on the polymers it consists of, and vice versa. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. The resulting compressed volume with a boxlength of 43Å where six polymers with 40 repeat units each are displayed. The polymer backbone atoms are displayed as spheres. The figure was created with VMD. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. The repeat unit of the modeled PBOCST where, the oxygen atom is shown to which the deprotection reaction during PEB and the ionization reaction during development has been assigned. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Average degree of ionization (DoI) and number fluctuations for the whole simulation region are displayed for D=3.0nm2∕s for polymers generated with a random walk. The results were averaged over 10 simulations. An increase in the number fluctuations can be observed as well with an even larger increase for shorter polymers. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Average degree of ionization (DoI) and number fluctuations for the whole simulation region are displayed for D=2.5nm2∕s for polymers generated with MD simulations. The results were averaged over 10 simulations. As can be observed, the DoI remains approximately constant while number fluctuations increase for shorter polymers. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Resulting sidewall roughness for both polymer generation methods. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /

Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. The chain length at the mean center of mass of the different polymers for a cross section through the line at D=3.0nm2∕s. The result was averaged over the length of the line. The color bar shows the number of repeat units. Figure Legend: From: Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator J. Micro/Nanolith. MEMS MOEMS. 2007;6(4): doi: /