Zheng Li, 96th LHCC open session, 19th November 2008, CERN RD39 Status Report 2008 Zheng Li and Jaakko Härkönen Full author list available at

Slides:



Advertisements
Similar presentations
Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.
Advertisements

Jaakko Härkönen, GSI/FAIR/NUSTAR/S-FRS seminar, Kumpula 6 October 2008 Radiation hard silicon detectors for GSI/FAIR experiments J. Härkönen 1), E. Tuovinen.
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.
Ultra-Fast Silicon Detector 1 This report is a summary of what was shown at IEEE. Nicolo Cartiglia, INFN, Torino - UFSD - Timing Workshop CERN 2014 Nicolo.
Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.
TCT+, eTCT and I-DLTS measurement setups at the CERN SSD Lab
Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments
Microstrip Detector R&D at Helsinki Institute of Physics J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen and J. Tuominiemi Helsinki Institute of Physics.
Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
Charge collection studies on heavily diodes from RD50 multiplication run (update) G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.
KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik
Gunnar Lindstroem – University of HamburgHamburg workshop 24-Aug-061 Radiation Tolerance of Silicon Detectors The Challenge for Applications in Future.
ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona First Measurements on 3D Strips Detectors.
M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.
Edge-TCT and Alibava measurements with pion and neutron irradiated micro-strip detectors V. Cindro 1, G. Kramberger 1, I. Mandić 1, M. Mikuž 1,2, M. Milovanović.
Z. Li Brookhaven National Laboratory, Upton, NY , USA E. Verbitskaya, V. Eremin, A. Ivanov Ioffe Physico-Technical Institute of Russian Academy.
RD50 RD50 workshop FreiburgKatharina Kaska 1 Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors Katharina Kaska, Michael.
1 G. Pellegrini The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors 3D Double-Sided sensors for the CMS phase-2 vertex.
J.Harkonen and Z.Li, LHCC open session, CERN, 24th November CERN RD39 Collaboration: Cryogenic Tracking Detectors RD39 Status Report 2004 Jaakko.
Panja Luukka1 Silicon beam telescope for CMS SLHC detector studies (SiBT Panja Luukka, Sandor Czellar, Jaakko Härkönen, Eija Tuominen, Jorma.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
D. Menichelli, RD50, Hamburg, august TSC, DLTS and transient analysis in MCz silicon Detectors at different process temperature, irradiation.
Panja Luukka, Helsinki Institute of Physics1 Beam telescope for testing p- and n-type detectors Erkki Anttila, Sandor Czellar, Jaakko Härkönen,
Charge Collection Study of Heavily Irradiated Silicon Microstrip Detectors Chris Lucas (University of Bristol) Irena Dolenc Kittelmann, Michael Moll, Nicola.
1 Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p + -n(TD)-n + detectors processed via thermal donor.
8 July 1999A. Peisert, N. Zamiatin1 Silicon Detectors Status Anna Peisert, Cern Nikolai Zamiatin, JINR Plan Design R&D results Specifications Status of.
Panja Luukka1 Silicon beam telescope (SiBT) and MCz detectors: status and plans for 2008 Erkki Anttila, Sandor Czellar, Jaakko Härkönen, Matti.
Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors Graeme Stewart a, R. Bates a, C. Corral b, M. Fantoba b, G. Kramberger c, G.
Effects of long term annealing in p-type strip detectors irradiated with neutrons to Φ eq =1·10 16 cm -2, investigated by Edge-TCT V. Cindro 1, G. Kramberger.
Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner,
Report on CMS 3D sensor tests Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
Joachim Erfle Summary of measurements after first irradiation of HPK samples 19 th RD50 Workshop November 2011 CERN Joachim.
TCT measurements with SCP slim edge strip detectors Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko Milovanović 1, Marko.
Celso Figueiredo26/10/2015 Characterization and optimization of silicon sensors for intense radiation fields Traineeship project within the PH-DT-DD section.
A CCE and TCT Study on low resistivity MCz p-on-n detectors Nicola Pacifico, Michael Moll, Manuel Fahrer 16 th RD50 workshop, Barcellona, 31 May-2 June.
Silicon strip tests Silicon upgrade workshop in Nashville June 9, 2003 Yuji Goto (RIKEN/RBRC)
Charge Collection, Power, and Annealing Behaviour of Planar Silicon Detectors after Reactor Neutron, Pion and Proton Doses up to 1.6×10 16 n eq cm -2 A.
Study on and 150  m thick p-type Epitaxial silicon pad detectors irradiated with protons and neutrons Eduardo del Castillo Sanchez, Manuel Fahrer,
Charge Multiplication Properties in Highly Irradiated Thin Epitaxial Silicon Diodes Jörn Lange, Julian Becker, Eckhart Fretwurst, Robert Klanner, Gunnar.
Giulio Pellegrini 27th RD50 Workshop (CERN) 2-4 December 2015 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona 1 Status of.
Irradiated 3D sensor testbeam results Alex Krzywda On behalf of CMS 3D collaboration Purdue University March 15, 2012.
FBK 3D CMS pixel sensors preliminary lab measurements E. Alagoz 1, A. Krzywda 1, D. Bortoletto 1, I. Shipsey 1, G. Bolla 1, and G. F. Dalla Betta 2, M.
Infrared Laser Test System Silicon Diode Testing 29 May 2007 Fadmar Osmić Contents: Setup modifications new amplifier (Agilent MSA-0886) new pulse generator.
A novel two-dimensional microstrip sensor for charge division readout D. Bassignana, M. Lozano, G. Pellegrini CNM-IMB (CSIC) M. Fernández, R. Jaramillo,
A novel two-dimensional microstrip sensor with charge division readout M. Fernández, R. Jaramillo, F.J. Muñoz, I. Vila IFCA (CSIC-UC) D. Bassignana, M.
Trench detectors for enhanced charge multiplication G. Casse, D. Forshaw, M. Lozano, G. Pellegrini G. Casse, 7th Trento Meeting - 29/02 Ljubljana1.
Giulio Pellegrini Actividades 3D G. Pellegrini, C. Fleta, D. Quirion, JP Balbuena, D. Bassignana.
Investigation of electric field and evidence of charge multiplication by Edge-TCT G.Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik.
Comparison of the AC and DC coupled pixels sensors read out with FE-I4 electronics Gianluigi Casse*, Marko Milovanovic, Paul Dervan, Ilya Tsurin 22/06/20161.
Annealing effects in irradiated HPK strip detectors measured with SCT128 chip Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1,Gregor Kramberger 1, Marko.
TCT measurements with strip detectors Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko Milovanović 1, Marko Mikuž 1,2, Marko.
RD42 Status Report W. Trischuk for the RD42 Collaboration LHCC Meeting – June 12, 2013 Development of CVD Diamond Tracking Detectors for Experiments at.
Panja Luukka. Silicon Beam Telescope (SiBT) Group Since 2007 a collaboration of several CMS institutes has been operating a silicon micro-strip beam telescope.
Investigation of the effects of thickness, pitch and manufacturer on charge multiplication properties of highly irradiated n-in-p FZ silicon strips A.
E-TCT measurements with laser beam directed parallel to strips Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko Mikuž 1,2,
AC―coupled pitch adapters for silicon strip detectors J. Härkönen 1), E. Tuovinen 1), P. Luukka 1), T. Mäenpää 1), E. Tuovinen 1), E. Tuominen 1), Y. Gotra.
24/02/2010Richard Bates, 5th Trento workshop, Manchester1 Irradiation studies of CNM double sided 3D detectors a. Richard Bates, C. Parkes, G. Stewart.
Test beam results of MCz-Si detectors
G. Kramberger, V. Cindro, I. Mandić,
Charge collection studies with irradiated CMOS detectors
Graeme Stewarta, R. Batesa, G. Pellegrinib, G. Krambergerc, M
Position Sensitive TCT Measurements with 3D-stc detectors
Igor Mandić1, Vladimir Cindro1, Gregor Kramberger1 and Marko Mikuž1,2
Status of the CERN ALIBAVA System
CCE measurements with Epi-Si detectors
Beam Test Results for the CMS Forward Pixel Detector
Igor Mandić1, Vladimir Cindro1, Gregor Kramberger1 and Marko Mikuž1,2
Presentation transcript:

Zheng Li, 96th LHCC open session, 19th November 2008, CERN RD39 Status Report 2008 Zheng Li and Jaakko Härkönen Full author list available at

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Outline 1. Trapping effect on Charge Collection Efficiency (CCE) in Super-LHC 2. Operation of current-injected-detectors (CID) 3. CCE measurements on CID 4. Beam test results of CID strip detectors 5. Summary

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Trapping effect on CCE in S-LHC For fluence less than n eq /cm 2, the trapping term CCE t is not significant Overall CCE is product of CCE t is trapping factor CCE GF is geometrical factor d t is trapping distance, and it is about 20  m at n eq /cm 2 for non-CID detectors q MIP is unit charge/  m for MIP in Si = 80 e’s/  m

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Current injected detector (principle of operation) J p = epμE divJ=0 divE=p tr E(x=0) = 0 (SCLC mode) The key advantage: The shape of E(x) is not affected by N mgl, and stable at any fluence E(x) x P+ +J p d

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 2x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Evolution of E(x) with fluences 500 V n+n+ p+p+ n+n+ p+p+ w

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 3x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 4x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 5x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 6x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 7x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 8x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 9x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID Reverse bias x 0 d E 10x10 15 n eq /cm 2 x 0 d E Charge Injected Detector (CID) –Operational Principle Little change! n+n+ p+p+ n+n+ p+p+ Evolution of E(x) with fluences 500 V Electric field is extended through entire bulk regardless of irradiation fluence: virtue full depletion

Zheng Li, 96th LHCC open session, 19th November 2008, CERN The charge collection efficiency in CID and reverse biased strip detector

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Charge Collection Efficiency of CID detector Total charge collected is the sum of both e’s and h’s integrated over the detector thickness (for MIP)

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CCE vs V simulation –CID vs reverse bias 3X10 15 n eq /cm 2 Trapping of holes and electrons less in CID ? Larger  t used to fit CID data less trapping in CID

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CCE of strip detectors as a function of fluence Pitch =80  m, width =20  m CID Reverse bias Larger  t used to fit CID data less trapping in CID

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Characterization of CID detectors -Diodes CCE and TCT measurements with Cryogenic-TCT setup of RD39 –Temperature range K –Measurements on diodes: i.e. no WF seen. –CCE with 1060nm IR laser. –Comparison of irradiated CID vs. non-irrad reference device. –Comparison CID vs. normal reverse bias under exactly same conditions. He Striling cooler Vacuum chamber 3GHz oscilloscope Turbo pump SMU Heater controller Amplifier & T-bias Temperature controller Pressure controller

Zheng Li, 96th LHCC open session, 19th November 2008, CERN IR signals of 24 GeV/c irradiated pad detectors CID 500V / 220K

Zheng Li, 96th LHCC open session, 19th November 2008, CERN IR signals of heavily irradiated CID vs. reverse biased detectors 1.0 × n eq /cm × n eq /cm 2 P-typeN-type

Zheng Li, 96th LHCC open session, 19th November 2008, CERN StripsPixels Expected CCE of CID at -50 ° C Simulation takes into account linear dependence of trapping probability on fluence β=0.01 cm -1  x E-field distribution is assumed 500 V

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Characterization of CID strip detectors –Segmented detectors Test beam with 225 GeV/c muon beam at CERN H2. MCz-Si strip detector irradiated 3 × n eq /cm channels attached to APV25 read-out CID detector placed in external cold box capable to cool down to -54 ° C while module is operational. Data acquisition with modified XDAQ. Analysis with CMSSW. μ GeV 8 reference planes. Resolution ~4  m. About events in 20min.

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID, irradiated up to 3×10 15 n eq /cm 2  MCz-Si AC-coupled strip detector with 768 channels  APV25 readout  Fabrication of detector and pitch adapter by Helsinki University of Technology, Micronova  Irradiation with 26 MeV University of Karlsruhe  University of Karlsruhe 4 cm

Zheng Li, 96th LHCC open session, 19th November 2008, CERN P1 P2 P3 Q1 Q2 Q3 Peltier1 Peltier2 Peltier3 Cold plate H & T Monitoring Temp. Control Power Supplies H T Q4 Multi I/O Board PC Cooling the CID down to C  In order to measure the CID in a test beam, the SiBT telescope was used as a reference telescope.  The CID was placed in front of SiBT inside an external cold finger, which was cooled down to -50 °C.  More about SiBT in Panja Luukka’s talks at RD50 Workshops and CMS Upgrade meetings.

Zheng Li, 96th LHCC open session, 19th November 2008, CERN CID strip detector test beam results –CCE at C 75% 20% 3x10 15 n fluence (n eq /cm 2 ) 1x % (5400 e’s) 6% (1440 e’s) 38 50

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Noise of CID and non-irradiated detector CID noise at –40 °C Little change with T (-53 to –40 ° C) Reference detector noise at -20°C Fz-Si p + /n - /n +, same design, same processing, V fd ~10V S/N=38/3.4>10

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Tracking efficiency of CID vs reference CID at -53°CReference Fz-Si at -20°C Tracking efficiency in this content = probability that DUT measures the same track as 8 reference planes V fd 80%

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Resolution of CID 3  n eq /cm 2 vs. non-irradiated reference CID 3  n eq /cm 2 -40°C Reference Fz-Si -20°C 15  m 20  m

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Conclusions CID offers virtue full dpeltion and less trapping At least two times greater CCE is expected from CID than in reverse biased detectors according to C-TCT (IR laser) measurements and simulations. Normal detector operation possible by 300 μm MCz-Si up to 2×10 15 n eq /cm 2 fluence, i.e. strip layers in Super-LHC trackers. CID was measured at -40°C, -45°C and -53°C for 768 channels AC-coupled MCz-Si strip detector in test beam. Test beam results reveal >70%, and S/N >10 after 3  n eq /cm 2 irradiation. Test beam was performed with recycled CMS electronics and DAQ. CID operation possible up to 1×10 16 n eq /cm 2 fluence. Collected charge equals ≈7000e - and 30%.

Zheng Li, 96th LHCC open session, 19th November 2008, CERN Work plan 2009 Goal: Be closer to the LHC experiments Test beam on heavily irradiated CID strip detectors available now in summer New micro strip sensor processing (ATLAS and CMS specifications). –Development (different thickness) –Irradiation  n eq /cm 2. –Module assembly and bonding. –Test beam in 2010 Study of CID suitability for higher temperature operation. - Target is -25°C i.e. operational temperature of current LHC trackers. - Detector thickness study: the thicker, the higher operational T - Temperature dependent simulations of CCE and S/N. - Measurements on diodes with C-TCT. - Trapping time constant measurement of CID - Test beam results analysis. - Optima detector configurations (n on p, symmetrical, p on p, n on n)

Zheng Li, 96th LHCC open session, 19th November 2008, CERN RD39 Conference participation in th International Workshop on Radiation Imaging Detectors in Helsinki, Finland, June 29 - July 3, th IFAMST The International Forum on Advanced Material Science and Technology, Hong Kong, June 12-14, th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence,15-17 October Pixel2008, FNAL, Batavia, IL, USA, 23–26 September, 2008 CMS Upgrade workshop, FNAL, Batavia, IL, USA, November , RD39 Workshops at Ljubljana, Slovenia and at CERN (June and November, 2008)