Penn ESE370 Fall2010 -- DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 31: November 22, 2010 Inductive Noise.

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Presentation transcript:

Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 31: November 22, 2010 Inductive Noise

Today Inductive Responses Calculating L Where do inductances show up Impact of inductance on digital circuits How address Penn ESE370 Fall DeHon 2

Response What happens here? Penn ESE370 Fall DeHon 3

LC Response Penn ESE370 Fall DeHon 4 V2V2

LC Response Penn ESE370 Fall DeHon 5

LC Response Penn ESE370 Fall DeHon 6

LC Response Penn ESE370 Fall DeHon 7

LC Response Penn ESE370 Fall DeHon 8

LC Response Penn ESE370 Fall DeHon 9

LC Response Penn ESE370 Fall DeHon 10

LC Response Penn ESE370 Fall DeHon 11

Response? Penn ESE370 Fall DeHon 12

RLC Response Penn ESE370 Fall DeHon 13 V2V2

RLC Response Penn ESE370 Fall DeHon 14

RLC Response Penn ESE370 Fall DeHon 15

Solving for w Penn ESE370 Fall DeHon 16

RLC Penn ESE370 Fall DeHon 17

RLC Penn ESE370 Fall DeHon 18

RLC For Oscillation Decay Penn ESE370 Fall DeHon 19

RLC Response (R=100) Penn ESE370 Fall DeHon 20

When Oscillate Penn ESE370 Fall DeHon 21

RLC Response Penn ESE370 Fall DeHon 22

Inductance of Wire Penn ESE370 Fall DeHon 23

Lwire Penn ESE370 Fall DeHon 24 C and L per unit length

Chip Inductance C wire = 0.16 pF  for the 1mm) C wire = 0.16nF/m Permeability  0 ≈  Si02 =12.6×10 -7 H/m Permitivity  ox =3.5× F/m Penn ESE370 Fall DeHon 25

On Chip C wire = 0.16 pF  for the 1mm) C wire = 0.16nF/m Permeability  0 ≈  Si02 =12.6×10 -7 H/m Permitivity  ox =3.5× F/m  pH (for 1 mm) Penn ESE370 Fall DeHon 26

Comparisons 5mil trace on PCB –About 2.7nH/cm – Protoboard wires (0.6mm diameter) –About 7nH/cm – On chip wire –0.28nH/mm = 2.8nH/cm Penn ESE370 Fall DeHon 27

Inductors Bond pads Chip leads Long wire runs Cables Penn ESE370 Fall DeHon 28 Src:

Where Arise Penn ESE370 Fall DeHon 29

Signal Path Penn ESE370 Fall DeHon 30

Power Ground Penn ESE370 Fall DeHon 31

Estimate R eq, C eq for gates in parallel –R 0 = 25K  –C 0 = 0.01 fF say 10C 0 =0.1fF for typical load 250 gates switching at clock R eq = 100  C eq =25fF Assume L=1nH Penn ESE370 Fall DeHon 32

Power Ground Penn ESE370 Fall DeHon 33

RLC Response Penn ESE370 Fall DeHon 34

Today’s Chips How many gates? Penn ESE370 Fall DeHon 35

Multiple Power/Ground Pins Use many power/ground pins How many pins on a package? Divide switching gates by pins –To get effective load on each pin Penn ESE370 Fall DeHon 36

How Improve Penn ESE370 Fall DeHon 37

Minimize the L Make wires short Use power and ground planes Penn ESE370 Fall DeHon 38

Add Good C’s Bypass Capacitors –On board –On chip Penn ESE370 Fall DeHon 39

With Bypass Penn ESE370 Fall DeHon 40

Minimize Current Draw More Power/Ground Pins Slower rise/fall times Spread out switching Penn ESE370 Fall DeHon 41

Admin Wednesday –Homework due –Lecture Friday holiday Lecture on Monday Penn ESE370 Fall DeHon 42

Idea Long wires are inductive –Avoid them –Especially on power supplies Bypass capacitors help Penn ESE370 Fall DeHon 43