Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Left: Cropped top-down SEM-CD images for 1st, 2nd, 4th, and 100th captured image. Center: CD (light gray) and 3-LWR (black) trends on captured image. Right: Correlation length on captured image. Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Left: CD (black bars), 3σ-CD (light gray curve), and 3σ-LWR (gray curve) trends on T b for annular and Dipole40 illumination. Right: PSDs for annular illumination, no bake (black), 170°C (gray), and 175°C HB (light gray). Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Top: Top-down SEM-CD images for standard process, 150°C HB process + water rinse development, and 150°C HB process + FIRM rinse development. Bottom left: CD (gray bars) and 3σ-LWR (black bars) trends for the standard process wafer, 150°C HB process + water rinse development wafer, and 150°C HB process + FIRM rinse development wafer. Bottom right: PSDs for the standard process wafer (black curve), 150°C HB process + water rinse development wafer (gray curve), and 150°C HB process + FIRM rinse development wafer (light gray curve). Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. CD (gray bars) and 3σ-LWR (black bars) trends for rinse materials A and B, with and without deionized water rinse at different concentrations. Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Top: SEM-CD top-down images of C-Quad20 and Dipole40 for reference and UV-smoothing treatment wafers. Bottom left: CD (gray bars) and 3σ-LWR (black bars) trends for the reference and UV-smoothing treatment wafers, both C-Quad20 and Dipole40 illuminations. Bottom right: PSDs for the reference (black and gray curves) and UV-smoothing treatment (dark gray and light gray curves) wafers, respectively, for C-Quad20 and Dipole40 illuminations. Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Top left: Top-down SEM-CD images of no implant, Si-2keV, and Ar-8keV implanted wafers. Bottom left: CD (gray bars) and 3σ-LWR (black bars) trends for no implant, Si-2keV, Si-8keV, Ar-2keV, and Ar-8keV implanted wafers; the numbers over the CD bars represent 3σ-CD (nm). Right: PSDs for the no implant (black curve), Si-2keV (gray curve), and Ar-8keV (light gray curve) implanted wafers. Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /

Date of download: 7/7/2016 Copyright © 2016 SPIE. All rights reserved. Left: CD (gray bars) and 3σ-LWR (black bars) trends for resist pattern, after BARC etch, DARC etch, and APF etch. Right: PSDs for resist pattern (black curve), after BARC etch (dark gray curve), DARC etch (gray curve) and APF etch (light gray curve). Figure Legend: From: Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes J. Micro/Nanolith. MEMS MOEMS. 2010;9(4): doi: /