Structural and Optical Properties of SrTiO 3 on Different Substrates N. Samarasingha, Cesar Rodriguez, Jaime Moya, Stefan Zollner, Nalin Fernando Department.

Slides:



Advertisements
Similar presentations
1 Mechanism for suppression of free exciton no-phonon emission in ZnO tetrapod nanostructures S. L. Chen 1), S.-K. Lee 1), D. Hongxing 2), Z. Chen 2),
Advertisements

Carrier and Phonon Dynamics in InN and its Nanostructures
Optical properties of infrared emission quaternary InGaAsP epilayers Y. C. Lee a,b, J. L. Shen a, and W. Y. Uen b a. Department of Computer Science and.
Influence of Substrate Surface Orientation on the Structure of Ti Thin Films Grown on Al Single- Crystal Surfaces at Room Temperature Richard J. Smith.
Ch.1 Introduction Optoelectronic devices: - devices deal with interaction of electronic and optical processes Solid-state physics: - study of solids, through.
Silicon Nanowire based Solar Cells
National Science Foundation Increasing thermo-electric conversion efficiency by defect engineering Robert F. Klie, University of Illinois at Chicago, DMR.
Deal-Grove Model Predictions Once B and B/A are determined, we can predict the thickness of the oxide versus time Once B and B/A are determined, we can.
Applying X-Rays in Material Analysis
Tin Based Absorbers for Infrared Detection, Part 2 Presented By: Justin Markunas Direct energy gap group IV semiconductor alloys and quantum dot arrays.
Tuesday, May 15 - Thursday, May 17, 2007
Thorium Based Thin Films as EUV Reflectors
Determining Optical Properties of Uranium Oxide Richard Sandberg Brigham Young University Special Thanks to Kristi Adamson, Shannon Lunt, Elke Jackson,
RECX Thin film metrology.
Quantum Dots: Confinement and Applications
J. H. Woo, Department of Electrical & Computer Engineering Texas A&M University GEOMETRIC RELIEF OF STRAINED GaAs ON NANO-SCALE GROWTH AREA.
Magnetoelastic Coupling and Domain Reconstruction in La 0.7 Sr 0.3 MnO 3 Thin Films Epitaxially Grown on SrTiO 3 D. A. Mota IFIMUP and IN-Institute of.
Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)
Growth and Characterization of IV-VI Semiconductor Multiple Quantum Well Structures Patrick J. McCann, Huizhen Wu, and Ning Dai* School of Electrical and.
Slide # 1 SPM Probe tips CNT attached to a Si probe tip.
InAs on GaAs self assembled Quantum Dots By KH. Zakeri sharif University of technology, Spring 2003.
Quantum Electronic Structure of Atomically Uniform Pb Films on Si(111) Tai C. Chiang, U of Illinois at Urbana-Champaign, DMR Miniaturization of.
Applying X-Ray Diffraction in Material Analysis Dr. Ahmed El-Naggar.
X-rays techniques as a powerful tool for characterisation of thin film nanostructures Elżbieta Dynowska Institute of Physics Polish Academy of Sciences,
Electrical and optical properties of organic materials are closely related to its molecular orientation. SE is employed in the understanding of molecular.
Technology Thin films ZnO:Al were prepared by RF diode sputtering from ZnO + 2wt % Al 2 O 3 target. It is a plasma assisted deposition method which involves.
1 Confidential Proprietary Application of layers with internal stress for silicon wafer shaping J. Šik 1, R. Lenhard 1, D. Lysáček 1, M. Lorenc 1, V. Maršíková.
D.-A. Luh, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, S. Harvey, R. E. Kirby, T. Maruyama, and C. Y. Prescott Stanford Linear Accelerator.
Temperature behaviour of threshold on broad area Quantum Dot-in-a-Well laser diodes By: Bhavin Bijlani.
National Science Foundation GOALI: Epitaxial Growth of Perovskite Films and Heterostructures by Atomic Layer Deposition and Molecular Beam Epitaxy John.
NANO 225 Intro to Nano/Microfabrication
ZnCo 2 O 4 : A transparent, p-type, ferromagnetic semiconductor relevant to spintronics and wide bandgap electronics Norton Group Meeting 4/1/08 Joe Cianfrone.
Erie H. Moralesa), M. Batzillb) and U. Diebolda)
Negative Capacitance Devices to Enable Low- Voltage/Low-Power Switching In Electronic Devices John G. Ekerdt, University of Texas at Austin, DMR
Center for Materials for Information Technology an NSF Materials Science and Engineering Center Substrate Preparation Techniques Lecture 7 G.J. Mankey.
STUDY OF TRANSPARENT FERROELECTRIC THIN FILMS BY OPTICAL REFLECTOMETRY AND ELLIPSOMETRY I. Aulika Institute of Solid State Physics, University of Latvia,
Ion Beam Analysis of the Composition and Structure of Thin Films
Slide # 1 PL spectra of Quantum Wells The e1-h1 transition is most probable and observed with highest intensity At higher temperature higher levels can.
Thin Film Deposition. Types of Thin Films Used in Semiconductor Processing Thermal Oxides Dielectric Layers Epitaxial Layers Polycrystalline Silicon Metal.
X-Ray Diffraction Analysis of Ⅲ - Ⅴ Superlattices: Characterization, Simulation and Fitting 1 Xiangyu Wu Enlong Liu Mentor: Clement Merckling EPI Group.
G. Kartopu*, A.K. Gürlek, A.J. Clayton, S.J.C. Irvine Centre for Solar Energy Research, OpTIC Glyndŵr, St. Asaph, UK B.L. Williams, V. Zardetto, W.M.M.
Ayana Ghosh Department of Physics, University of Michigan-Flint
Thermal Strain Effects in Germanium Thin Films on Silicon Travis Willett-Gies Nalin Fernando Stefan Zollner.
Date of download: 7/7/2016 Copyright © ASME. All rights reserved. From: Change in Radiative Optical Properties of Ta2O5 Thin Films due to High-Temperature.
How thick is my film? Process control for the semiconductor industry Stefan Zollner Department of Physics, New Mexico State University, Las Cruces, NM.
Evaluation of Polydimethlysiloxane (PDMS) as an adhesive for Mechanically Stacked Multi-Junction Solar Cells Ian Mathews Dept. of Electrical and Electronic.
Mohammed Zeeshan BT/PE/1601/ Microtexture: Electron Diffraction in the SEM Texture And Microstructure & Anisotropy.
Nathan Steinle, Barry D. Koehne, Ryan Cottier, Daniel A
Funding Source: NSF (DMR )
Introduction to GaAs HBT and current technologies
Strain dependence of the band structure and critical points of pseudomorphic Ge1-ySny alloys on Ge Nalin Fernando,1 John Hart,2 Ryan Hickey,2 Ramsey Hazbun,2.
Band Structure and Phonons of Bulk NiO from Ellipsometry
MBE Growth of Graded Structures for Polarized Electron Emitters
Laser Physics & Nonlinear Optics
Yanwen Liu, Weiyi Wang, Cheng Zhang, Ping Ai, Faxian Xiu
d ~ r Results Characterization of GaAsP NWs grown on Si substrates
Interaction between Photons and Electrons
BAHIRDAR UNIVERSTY COLLEGE OF SCIENCE DEPARTMENT :MATERIAL SCIENCE AND ENGINNERING PRESENTETON ON: ELLIPSOMETRY INSTRUMENT PREPEARED BY :ZELALEM GETU AMSALE.
An Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity Matthew Pelton Glenn Solomon, Charles Santori, Bingyang Zhang, Jelena.
Ion Beams for Surface Topology Modification
Characterizing Multilayer Thin films
X-ray Scattering from Thin Films
Optical and Terahertz Spectroscopy of CdSe/ZnS Quantum Dots
Structural Quantum Size Effects in Pb/Si(111)
Atomic Picture of Crystal Surfaces
Strained Silicon MOSFET
Determination of the Dielectric Function of Nickel Ferrite Thin Films
Epitaxial Deposition
Strained Silicon Aaron Prager EE 666 April 21, 2005.
Atilla Ozgur Cakmak, PhD
Presentation transcript:

Structural and Optical Properties of SrTiO 3 on Different Substrates N. Samarasingha, Cesar Rodriguez, Jaime Moya, Stefan Zollner, Nalin Fernando Department of Physics, New Mexico State University, Las Cruces, NM Sudeshna Chattopadhyay, Indian Institute of Technology Indore, Indore, India Patrick Ponath, Kristy J. Kormondy, Alex A. Demkov, University of Texas at Austin NSF: DMR Si SrTiO 3 LaAlO 3 SrTiO 3 Light Excitons at Interfaces 2016 Lawrence Symposium on Epitaxy February 2016, Scottsdale, AZ 20 nm NIR/VIS/QUV ellipsometry: 190 to 2500 nm, 77 to 800 K

New Mexico State University Flat & uniform films, at least 5 by 5 mm 2, low surface roughness, films on single-side polished substrate Graduate Students: Lina Abdallah, Travis Willett-Gies, Nalin Fernando, Tarek Tawalbeh (Theory), Nuwanjula Samarasingha, Nathan Nunley Undergraduate Students: Cesar Rodriguez, Khadijih Mitchell, Cayla Nelson, Jaime Moya, Jackie Cooke, Maria Spies 2

New Mexico State University Biography Regensburg Germany Las Cruces, NM Since Motorola (Mesa, Tempe) Arizona, Motorola, Freescale Texas, Freescale, IBM New York, 91-92;

Epitaxy at Motorola ( ) First SiGe epi reactor in CMOS production fab (Mesa). First HR-XRD in Si wafer fab. First six-inch GaAs fab. Si:C alloys for NMOS (ASM) AlN on Si (NCSU, Texas Tech) Jaguar: SrTiO 3 on Si Hobby: Ge 1-x Sn x on Si Stefan Zollner, 06/09/2012, Conf. for Undergrad. Women in Physical Sciences 4 InGaP HBT epi stack SiC:P Si:C NMOS 4 Optical spectrum

SiGe:C Metrology for the semiconductor industry 5 Si cap (emitter) SiGe:C base Si substrate High-resolution XRD Spectroscopic Ellipsometry SZ, Hildreth, Liu, Zaumseil, Weidner, Tillack, J. Appl. Phys. 88, 4102 (2000) E 1 Exciton

New Mexico State University Optical and X-Ray Characterization of Epitaxial Films Bulk SrTiO 3 Do the properties of SrTiO 3 epilayers depend on the substrates? What x-ray diffraction reveals: Distances between atoms Lattice mismatch (strain) Grain size Ge SrTiO 3 Si SrTiO 3 What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index sample Monochromator polarizer analyzer detector Φ X-ray beam atoms What x-ray reflectivity reveals: Thickness (5 Å to 1000 Å) Surface and interface roughness Electron density profile Thickness Roughness 6 LaAlO 3 SrTiO 3 Excitons at Interfaces

New Mexico State University Ellipsometry of SrTiO 3 on Si (Jaguar data) SrTiO 3 How do the properties of SrTiO 3 epilayers on Si depend on thickness? What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index Si SrTiO 3 sample Monochromator polarizer analyzer detector Φ 7 Thin SrTiO 3 epilayers on Si absorb less light than thick or bulk SrTiO 3. Lower refractive index. SZ, Demkov, Liu, Curless, Yu, Ramdani, Droopad; Spring 2000 MRS Meeting

New Mexico State University Old Explanation of Ellipsometry Data for SrTiO 3 on Si (wrong) SrTiO 3 How do the properties of SrTiO 3 epilayers on Si depend on thickness? What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index Si SrTiO 3 sample Monochromator polarizer analyzer detector Φ 8 Thin SrTiO 3 epilayers on Si absorb less light and have a lower refractive index (Kramers-Kroning). Why? SiO 2 interfacial oxide layer contributes more to thin SrTiO 3 epilayer measurements. Thin SrTiO 3 epilayers on Si absorb less light and have a lower refractive index (Kramers-Kroning). Why? SiO 2 interfacial oxide layer contributes more to thin SrTiO 3 epilayer measurements. Si SiO 2 SrTiO 3 SZ, Demkov, Liu, Curless, Yu, Ramdani, Droopad; Spring 2000 MRS Meeting

New Mexico State University Ellipsometry Data for (111)-textured CVD SrTiO 3 on Pt How do the properties of SrTiO 3 layers depend on deposition technique? 9 SZ, Demkov, Liu, Curless, Yu, Ramdani, Droopad; Spring 2000 MRS Meeting Poor texture and oxygen deficiency lead to broad critical points, low refractive index, and an Urbach tail. Prepared by CVD on 1000 A Pt films (Si substrate). Pt aligned along (111), 350 A grain size. SrTiO 3 lattice constant close to that of Pt. Our best SrTiO 3 films are strongly textured along Pt (111) and cannot be seen in XRD. Only SrTiO 3 with weak texture observed in XRD. Texture controlled by deposition conditions. Pt SrTiO 3 Textured polycrystyalline SrTiO 3 layers on Pt absorb less light than epitaxial SrTiO 3 on Si. Lower refractive index.

New Mexico State University Fast Forward to 2010: Thick poly-SrTiO 3 on Si by liquid deposition SrTiO 3 How do the properties of SrTiO 3 epilayers on Si depend on thickness? What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index Si SrTiO 3 sample Monochromator polarizer analyzer detector Φ 10 Thick polycrystalline SrTiO 3 layers have lower absorption and refractive index than bulk SrTiO 3. Why? Back in 2010, we suspected low density (wrong). Thick polycrystalline SrTiO 3 layers have lower absorption and refractive index than bulk SrTiO 3. Why? Back in 2010, we suspected low density (wrong). Weiss, Zhang, Spies, Abdallah, SZ, Cole, Alpay; J. Appl. Phys. 111, (2012). Photon Energy (eV) outstanding dielectric (better than bulk)

New Mexico State University New in 2014: X-ray reflectivity (XRR) Film Thickness Amplitude of oscillation- Contrast of Electron Density Roughness Period of oscillation - Film Thickness = 17nm 2θ2θ 11 ARO W911NF Critical angle: Electron Density XRR measures density, thickness, roughness

New Mexico State University Combine X-ray reflectivity (XRR) and Ellipsometry (SE) 12 What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index sample Monochromator polarizer analyzer detector Φ What x-ray reflectivity reveals: Thickness (5 Å to 1000 Å) Surface and interface roughness Electron density profile Thickness Roughness Si SiO 2 SrTiO 3 Si SiO 2 SrTiO 3 XRR:  (Si)  (SiO 2 )  (SrTiO 3 ) large Ellipsometry:  (SrTiO 3 )  (SiO 2 )  (Si) large

New Mexico State University Combine X-ray reflectivity (XRR) and Ellipsometry (SE) 13 What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index sample Monochromator polarizer analyzer detector Φ Si SiO 2 SrTiO 3 Ellipsometry:  (SrTiO 3 )  (SiO 2 )  (Si) large If we only have ellipsometry, we assume that the low absorption of SrTiO 3 is because of a thick SiO 2 interfacial layer. We use XRR to determine the thickness of the SrTiO 3 layer separately. Since XRR and SE find the same SrTiO 3 thickness, the interfacial SiO 2 layer is thin. Old explanation was wrong! n and  vary with STO thickness

New Mexico State University Optical and X-Ray Characterization of Epitaxial Films Bulk SrTiO 3 Do the properties of SrTiO 3 layers depend on the substrates? What x-ray diffraction reveals: Distances between atoms Lattice mismatch (strain) Grain size Ge SrTiO 3 Si SrTiO 3 What spectroscopic ellipsometry reveals: Thickness (100 to A) Excitonic absorption Refractive index sample Monochromator polarizer analyzer detector Φ X-ray beam atoms What x-ray reflectivity reveals: Thickness (5 Å to 1000 Å) Surface and interface roughness Electron density profile Thickness Roughness 14 LaAlO 3 SrTiO 3 Grown by MBE at UT Austin. Thickness: 20 nm. Epi process adjusted for substrate

New Mexico State University X-ray reflectivity measurement of SrTiO 3 on Ge 15 STO GeO 2 STOGe GeO 2 SrTiO 3 Bad sample

New Mexico State University X-ray reflectivity measurement of SrTiO 3 on various substrates 16 We determined electron density profile versus depth for all layers. XRR fitting is sensitive to surface roughness and interfacial layers. Even SrTiO 3 layer on SrTiO 3 substrate shows some contrast. SrTiO 3 on Ge was not stable (deteriorated over several months). Bad sample

X-Ray Diffraction: Lattice constant, strain, grain size ω-2θ scan ω-2θ scan (zoomed) ω scan 17 FWHM=0.80º FWHM=0.94º FWHM=0.02º Vertical strain -0.15% Grain Size = 168Å Grain Size = 161Å Vertical Strain= -0.15% Vertical Strain = -0.18%

X-Ray Diffraction: Lattice constant, strain, grain size 18 SrTiO 3 on Si and Ge: Tensile stress (thermal expansion mismatch). Almost fully relaxed. Large mosaic spread. SrTiO3 on bulk SrTiO 3 : Slight lattice mismatch (perhaps non-stoichiometric). SrTiO 3 on LaAlO 3 : Nearly pseudomorphic, but still large rocking curve width. (Substrate twinned.) Rocking Curves  /2  LAO Si,Ge STO LAOSTO Ge Si

Ellipsometry measures thickness and optical constants 19 Ellipsometric angles ( ,  ) are fitted to determine dielectric function . SrTiO 3 on Si/Ge: Low absorption SrTiO 3 on LaAlO 3 : High absorption Exciton (de)confinement!

Comparison of Ellipsometry and XRR Density 20 Not a good correlation between ellipsometry and XRR density. Absorption varies much more than XRR density. XRR Density Ellipsometry Density Aged sample

Mechanism for optical absorption in SrTiO 3 Excitonic effects in bulk SrTiO 3 have been observed (Gogoi & Schmidt). Details of band structure not well known (localized d electrons). Elliot theory for excitonic absorption: Assume this works like in GaAs 21 Free-carrier absorption prop. to # carriers Sommerfeld enhancement (excitonic effects) SrTiO 3 LaAlO 3 SrTiO 3 Si confinement (Type I) deconfinement (spatially indirect)

Tanguy formalism for excitonic absorption Assume this works like in GaAs C. Tanguy, Phys. Rev. Lett. 75, 4090 (1995). 22 Free-carrier absorption Sommerfeld enhancement (excitonic effects) Dipole matrix element:

New Mexico State University Tanguy formalism for excitonic absorption Assume this works like in GaAs Built into WVASE software. excitonic enhancement excitonic enhancement Tanguy (1995). 23

We see a similar reduction in ZnO layers on Si ZnO grown on Si by ALD (35ºC or 200ºC). Thickness varies from 5 to 70 nm.  almost constant, but  drops very fast in thin films. We also see a small blueshift (due to confinement). Dielectric functionXRR reflectance  and  vs thickness Pal, Mathur, Singh, Dutta, Singhal, SZ, Chattopadhyay, ICSE-6 (Berlin), submitted 24

What is responsible for the reduction? Excitonic screening? Overlap reduction? Clue: –SrTiO 3 on Si or Ge: Low absorption. –SrTiO 3 on LaAlO 3 : High absorption. Amplitude pre-factor: Lineshape Sommerfeld enhancement Free-carrier term P: Overlap of electron and hole 25 SrTiO 3 LaAlO 3 confinement (Type I) deconfinement (spatially indirect) SrTiO 3 Si

New Mexico State University Summary SrTiO 3 epilayers (20 nm) were characterized to determine structural and optical properties (XRD, XRR, ellipsometry). If the substrate band gap (LaAlO 3 ) is larger, the SrTiO 3 exciton is confined and the absorption increases (compare GaAs quantum dot lasers). Thin wide bandgap oxide epilayers (SrTiO 3, ZnO) on a narrow- gap substrate (Si, Ge) experience exciton deconfinement (lower absorption, refractive index). Polycrystalline STO: Probably an increase of the broadening. Bulk SrTiO 3 Do the properties of SrTiO 3 epilayers depend on the substrate? Ge SrTiO 3 Si SrTiO 3 LaAlO 3 SrTiO 3