ECFA Durham, September Recent progress on MIMOSA sensors A.Besson, on behalf of IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter, G. Claus, C. Colledani, G. Deptuch, W. Dulinski, M. Szelezliak (M6/M8 DAPNIA: Y. Degerli, E. Delagnes, N. Fourches, P. Lutz, F.Orsini) Fabrication technology Parameter optimization (pitch, T, diodes, etc.) Signal treatment and read-out speed Thinning Radiation tolerance
ECFA Durham, September 2004A.Besson2 MIMOSA 9 (1) Main features: –Techno opto. –Self Bias / Standard –Pitch 20/30/40 m –Small/large diodes (3/6 m) –With/without epi. 6 x 6 m 3.4 x 4.3 m 6 x 6 m 3T, 40 m 32 x 32 SB, 30 m 32 x 32 SB, 20 m 64 x 64 SB, 40 m 32 x mm 0.96 mm 5 x 5 m Explore the different parameters
ECFA Durham, September 2004A.Besson3 MIMOSA 9 (2) Beam CERN-SPS (120 GeV/c - ) Self-Bias, Pitch = 20 m, diode 6 x 6 m 2 MPV ~ 24 Charge (1 pixel); MPV ~ 325 (9 pixels); MPV ~ 850 (25 pixels); MPV ~870
ECFA Durham, September 2004A.Besson4 MIMOSA 9 (3) F irst comparisons: –SB with 20/30 m pitch : eff ≥ 99.8% –Resolution ~ 1.5 20 m pitch –Analysis in progress: Temperature Chip without epi. Hit selection optimization Sp. Resolution; SB, diode 3.4 x 4.3 m 2 StandardSelf Bias PITCH ( m) Diode size ( m) 3.4 x 4.36 x 63.4 x 4.36 x 63.4 x 4.35 x 53.4 x 4.36 x 6 S/N (Seed) Efficiency90.35± ± ± ± ± ± ± ±0.23 Noise (e-) vs Diode surface m 2
ECFA Durham, September 2004A.Besson5 Fast read-out architecture Different developments based on Mimosa 6 –VX DET layer 1-2: Fast, column // readout, with hit selection –VX DET layer 3-4-5: Multiple scans of the whole detector within train (r.o. ~200 s). Then read the samples between trains Integrate capacitors in each pixel (M7 and M8) Mimosa 7 –Features photoFET. 25 m pitch, No epi., 0.35 m, 64x16 readout in // with CDS –Status Being tested Beam test in Oct. Mimosa 8 (with DAPNIA) –Features 25 m pitch, 8 m epi., 0.25 m, 128x32 readout in // with CDS Signal discrimination –Status Being tested
ECFA Durham, September 2004A.Besson6 Thinning Mimosa 5 thinned down to epi. layer –Beam CERN –S/N M5-B standard M5-B thinned down
ECFA Durham, September 2004A.Besson7 MIMOSTAR STAR exp. upgrade: 1 st proto sent for fabrication –Extension of the Vertex Detector (2 layers) –Running conditions T amb. (higher leakage current). Readout time ~ 4ms –Features Opto technology to reduce noise TSMC 0.25 techno Based on M5 Pitch = 30x30 m x128 pixels Surface: ~ 4 x 5 mm 2 Subdivision in 10 groups of columns Pure analogic output. 10x10MHz output –Status Expected back from fab. end Oct.
ECFA Durham, September 2004A.Besson8 Radiation hardness SUC 1: –Chip with 8 pixels design. 30 m pitch Goal: study charge loss after irraditaion (X-ray) –Irradiation: X-ray: 500kRad and 1MRad Calibration with 55 Fe Measure leakage different T –Being analysed Charge loss for some pixel designs Leakage current Next irradiation + beam test –M9 (X, n) –M5 (n) Seems to stand 1 MRad
ECFA Durham, September 2004A.Besson9 Conclusion and outlook Geometry –Efficiency and resolution ok from 20 to 40 m New techno opto. AMS 0.35 m –Epi. Layer may change Chip read-out architecture –2 research lines layer 1-2 : r.o. speed Layer : storage capacitors –2 proto being tested –Promising results Radiation hardness –Studies in progress –Evidence stand > 0.5 MRad. Up to 1MRad. –M9 (n,X), M5 (n)
ECFA Durham, September 2004A.Besson10 Mimosa prototypes
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ECFA Durham, September 2004A.Besson15 Mimosa 9 (preliminary)
ECFA Durham, September 2004A.Besson16 Beam tests: résumé. 3 sessions (mai, juillet, aout). Chips testés: –M5B: 202, 205, 306. –M5 15 m: “nGD” –M9: 1,2 (avec epi.) et 7(sans epi.) 150k evts/run. 3/4 pts de Temp. Remarques –Inversion du trigger pour M5 15 m –Veto apres le reset pour M9. 2 10 frames. ~ 50% d’efficacité… A faire: –Calibration M5 nGD. –M9 sans epi. –M5 et M9 irradiés –M7
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