Drain VDVD Source VSVS P NN W L Vg G S D B. P NN SourceDrain VDVD VSVS טרנזיסטור MOS Vg.

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Presentation transcript:

Drain VDVD Source VSVS P NN W L Vg G S D B

P NN SourceDrain VDVD VSVS טרנזיסטור MOS Vg

G S D B I DS V DS Vg 1 >V T Vg 2 >Vg 1 Vg 3 >Vg 2 Vg 4 >Vg 3 Trans-Resistor = Transistor

P NN SourceDrain VDVD VSVS Vg N-MOS Channel=N N PP SourceDrain VDVD VSVS Vg P-MOS Channel=P G S D B G S D B Source of Electrons Source of Holes

P NN SourceDrain VDVD VSVS Vg I DS V DS Vg>V T V DS =Vg 5V 0V 3V 1.5V 5V 2. עלינו לקחת בחשבון את מפל המתח בתעלה וירידת מטען האינוורסיה לכוון השפך 7V אזור ללא מטען שנופל עליו כל המתח מעל 5V

5V 0V 3V 1.5V 5V 2. y x 0V מתח בתעלה

I DS V DS Vg>V T תחומי עבודה רוויה לינארי