CHAPTER ~4.17
4.7 STRONG INVERSION
4.7 Strong Inversion Complete Strong-Inversion Model a 4.7.2b 4.7.3
4.7 Strong Inversion Complete Strong-Inversion Model
Strong Inversion Complete Strong-Inversion Model
4.7.2b
4.7 Strong Inversion Body-Referenced Simplified Strong-Inversion Model Source-Referenced Simplified Strong-Inversion Model a b
4.4 Simplified All-Region Models Source-Referenced Simplified All-Region Models a b
4.7 Strong Inversion Source-Referenced Simplified Strong-Inversion Model
4.7 Strong Inversion Source-Referenced Simplified Strong-Inversion Model
4.7 Strong Inversion Source-Referenced Simplified Strong-Inversion Model
4.7 Strong Inversion Source-Referenced Simplified Strong-Inversion Model a b
4.7 Strong Inversion Source-Referenced Simplified Strong-Inversion Model
4.7 Strong Inversion Model Origin Summary
4.8 WEAK INVERSION
4.8 Weak Inversion Special Conditions in Weak Inversion
2.6 Inversion
2.6 Inversion
3.4 Regions of Inversion
4.8 Weak Inversion Body-Referenced Model
4.8 Weak Inversion Source-Referenced Model
4.8 Weak Inversion Source-Referenced Model
5.5 Drain-Induced Barrier Lowering
5.5 Drain-Induced Barrier Lowering 5.5.4
5.5 Drain-Induced Barrier Lowering
4.9 MODERATE- INVERSION AND SINGLE-PIECE MODELS 4.10 SOURCE- REFERENCED VS. BODY-REFERENCED MODELING
4.9 Moderate-Inversion and Single-Piece Models
4.11 EFFECTIVE MOBILITY 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCE
4.11 Effective Mobility
4.11 Effective Mobility
Effective Mobility
4.11 Effective Mobility
4.11 Effective Mobility
4.12 Effect of Extrinsic Source and Drain Series Resistance
4.13 TEMPERATURE EFFECTS 4.14 BREAKDOWN
4.13 Temperature Effects
4.13 Temperature Effects
4.14 Breakdown
4.15 THE P-CHANNEL MOS TRANSISTOR 4.16 ENHANCEMENT- MODE AND DEPLETION- MODE TRANSISTORS 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON
4.15 The p-Channel MOS Transistor
4.15 The p-Channel MOS Transistor
4.16 Enhancement-Mode and Depletion-Mode Transistors