Plasma cleaning Laser re-melting technique at FANL M. Ge, G. Wu, J. Ruan, J. Ozelis, T. Nicol, D. Sergatskov, D. Hicks, L. Cooley Fermi National Accelerator.

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Presentation transcript:

Plasma cleaning Laser re-melting technique at FANL M. Ge, G. Wu, J. Ruan, J. Ozelis, T. Nicol, D. Sergatskov, D. Hicks, L. Cooley Fermi National Accelerator Laboratory TESLA TECHNOLOGY COLLABORATION MEETING April 19 th ~ 22 th, 2010 Fermilab, IL, USA

Plasma cleaning outline Motivation Technical approaching Cavity test results

Plasma cleaning Cavity RF performance statistic The data was from Jlab and DESY 9-cell cavity activity summarized by R.L. Geng and C.Ginsburg

Plasma cleaning Surface defects (Pits and Bumps) caused quench Identified by Thermometry and Optical Inspection Bump found by KEK Optical Inspection with CCD camera in AES 9-cell cavity with thermometry (Jlab and FNAL) Quench at 18 MV/m Pit found by KEK optical inspection with CCD camera in AES #1cavity Quench at ~ 18 MV/m 500  m 26 um Defects in cavity AES003 correlated to heating detected by T-mapping

Plasma cleaning 1.3GHz 9-cell cavity TB9ACC017 EB-Welding seam Y-Y’ X-X’ Y-Y’ TB9ACC017 quenched at 12.3MV/m, Pit was found at Cell #4 equator 180 deg region (quench location), the pit is 150 µm deep and 200 µm wide on the top.

Plasma cleaning Diameter: 400µm,Depth: 60µm Diameter: 1300µm, Depth: 60µm A 15µm tiny bump in the center. 36MV/m quenched at pit region 39MV/m quenched at pit region TE1ACC003 TE1AES004 Equator welding seam Equator welding seam HAZ Experience from Fermilab 1.3GHz single-cell cavity activity

Plasma cleaning Laser repair tool Cavity Mirror Laser beam Goals: Try to push cavity gradient from 20MV/m limited by pits to 40MV/m.

Plasma cleaning 8 Laser source Ar gas cylinder CCD camera Laser beam deliver line Laser focus platform X-Y stage V-block with rollers Monitor Gas nozzle holder Rotation stage

Plasma cleaning

After re-melting the pit profile changed from 120µm deep to 30µm flat Manmade pit Profile Comparison before and after laser re-melting

Laser processing of 1.3GHz single-cell cavity TE1ACC003 The Pit before re-meltingAfter re-melting Images was taken from Kyoto Optical Inspection machine Screenshot of the monitor before and after laser re-melting

Plasma cleaning Profile comparison before and after Laser processing The pit profile changed from 60µm deep to 30µm flat after re-melting and 50µm light EP 400µm in diameter 60 µm in depth 700µm in diameter 30 µm in depth

Plasma cleaning TE1ACC003 vertical test results before and after laser processing After Laser processing: EP 20 µm +HPR+120C baking; Gradient achieved 39.4MV/m, quenched at molten region; After flux trapped into cavity, cavity quenched at 32MV/m.

Plasma cleaning To confirm flux trapping Cavity was warmed up to room temperature and cooled down to 2K

Plasma cleaning After another light EP (20 micron) Cavity was EP’d another 30µm+HPR+120C baking; Gradient achieved 40.3MV/m, quenched at molten region; Cavity quenched at 38MV/m after first quench.

Plasma cleaning Fast thermometer response on the laser spot Pre-heating was observed

Plasma cleaning Summary Successfully re-melted pit inside 1.3GHz single-cell cavity. Cavity gradient achieved nearly 40MV/m. Flux trapping degraded gradient from 39MV/m to 32MV/m. Flux trapping was improved by additional light EP. (totally about 50µm EP).

Plasma cleaning The next step Produce manmade pit in cavity and recover by laser Extend system to 1.3GHz 9-cell cavity. Surface analysis via Nb coupons and samples cut off from single-cell cavity. Pit in 1.3GHz 9-cell cavity TB9ACC017 Quenched at 12.3MV/m.