L25 April 171 Semiconductor Device Modeling & Characterization Lecture 25 Professor Ronald L. Carter Spring 2001.

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L25 April 171 Semiconductor Device Modeling & Characterization Lecture 25 Professor Ronald L. Carter Spring 2001

L25 April 172 Based on figure 12.18* n-type channel L 0 Junction Field-Effect Transistor (JFET) Active channel height, a Ch to Substr D.R.

L25 April 173 Pinch-off Voltage Note: In depl mode devices, V p0 > V bi

L25 April 174 Channel conductance and drain current

L25 April 175 N-channel drain current solution

L25 April 176 Saturation drain current,

L25 April 177 Ideal JFET drain characteristics IDID V DS V DS,sat I D,sat Ohmic, I D1 Non-physical analytic extension of I D1 Saturated: I D,sat ~I D1,sat

L25 April 178 n-channel JFET gate characteristic IDID V GS VpVp I DSS Saturated: I D,sat, approx. Saturated: I D1,sat

L25 April 179 Small-signal para- meters: g ds and g d

L25 April 1710 Graphical interpre- tation of g ds and g d IDID V DS V DS,sat I D,sat Slope = g ds Slope = g d

L25 April 1711 Small-signal gain params: g mL and g ms