Progress on Radiation Hardness Tests on SiGe Technologies for S-LHC Miguel Ullán, F. Campabadal, S. Díez, C. Fleta, M. Lozano, G. Pellegrini, J. M. Rafí CNM (CSIC), Barcelona

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Framework Increased luminosity at S-LHC  2 main challenges on Electronics: l Instantaneous  High occupancy  pile up  Higher segmentation  More channels  Power, Services  Increased shaping time  Speed, Power l Integrated  Radiation Degradation  Charge Collection Efficiency ↓  Signal  Gain  Gain degradation  Current ↑  Power  Noise degradation  S/N  Noise, Power l Need to find a proper technology that deals with these challenges  High speed, high gain with  Low power consumption  Radiation degradation  Cost, availability (prototyping, long term production)

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Aim l Evaluation of integrated circuit technologies for the readout of the upgraded ATLAS ID l Proposal of new SiGe BiCMOS technologies l Prove power saving with speed and gain l Evaluate radiation hardness l Design of a prototype Front End IC.

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Participants l SCIPP-UCSC, Santa Cruz, USA  D.E. Dorfan, A. A. Grillo, J. Metcalfe, M Rogers, H. F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder l CNM, Barcelona, Spain  M. Ullán, S. Díez, C. Fleta, G. Pellegrini, F. Campabadal M. Lozano l CERN, Geneva, Switzerland  P. Jarron l Collaborators:  Georgia Tech, Atlanta, USA: A. Sutton, J.D. Cressler  IHP, Frankfurt (Oder), Germany: R. Kraemer, B. Tillack, D. Knoll

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Test Plan l Several SiGe BiCMOS technologies have been identified  IBM  SCIPP (A. Grillo) & Georgia Tech (J. D. Cressler)  STm  CERN (P. Jarron)  IHP  CNM (M. Ullán)  JAZZ, TI, Infineon, etc. l Test  Comparison  Selection  Design  Test

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Uniform Testing l Draft for Uniform Testing (initially only for bipolar part)  A (minimum) common set of measurements and procedures in the tests of the radiation hardness of different technologies in order to allow for a consistent and quantitative comparison when performed by different groups l The points to agree on are:  Type of devices to consider and sizes,  A minimum set of measurements that should be performed on the devices,  Setup for these measurement and the environmental conditions (T, bias, …),  Minimum requirements of the irradiations to make them comparable (doses, dose rates, annealing, dosimetry, …)  A set of figures of merit for the radiation damage to obtain from the measurements  Criteria for these figures of merit in terms of usability for the s-LHC Front End Electronics

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona IHP l Innovations for High Performance, Frankfurt (Oder), Germany l (Re)founded 1992 l National Research Lab l Budget ~ 20 M €, l About 200 employees l Focus on wireless and broadband communication technologies  System Design  RF Circuit Design  Technology  Break-through, Material

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona IHP’s SiGe Technologies Current 0.13  m Alternative

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona IHP

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona IHP Samples l 2 Test chip wafer pieces with ~20 chips l 2 Technologies:  SGC25C (bip. module equivalent to SG25H1)  SG25H3 (Alternative technology) l Edge effects: Will be solved in future samples

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Pre-Irrad Results

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Irradiation Setup l 4 chips per board, 2 of each technology l 2 different transistor sizes:  0.21 x 0.84 μm 2  0.42 x 0.84 μm 2 l Biased l Pb(2 mm) – Al(2 mm) shielding box l NAYADE: “Water Well” Co60 source at Madrid (CIEMAT) ~300 rad(Si)/s up to 10 Mrad(Si)

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Measurements l Irradiated  4 transistors of technology SGC25C  6 transistors of technology SG25H3 + 4 unbiased l No annealing performed yet ! Forward Gummel Plots extracted  Current gain (  )

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Results l Excess Base 0.7 V [10 Mrad(Si)]

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Results l Current Gain 0.7 V [10 Mrad(Si)]

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Results l Bias Current for beta > 50 after 10 Mrad(Si)

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Conclusions l Evaluation of different SiGe BiCMOS technologies is under way l A document on Uniform Testing of radiation hardness of bipolar technologies has been issued and is being discussed in order to have quantitative comparisons among tests. l So far results indicate that IHP’s technologies would remain functional after heavy irradiations (IBM’s too) l It has been proven that samples should be irradiated under bias not to over-damage the devices

CERN, Nov 2005RD50 MeetingMiguel Ullán – CNM, Barcelona Future work l Perform (beneficial) annealing l Irradiate up to ? Mrad(Si) l Investigate damage under n and p irradiation l Test other technologies l Study emitter geometry influence l Compare with other SiGe technologies  Choose  DESIGN FE CHIP