Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor Geometry –According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity mm 2 –Strip pitch for both sides - 58 μm –Stereoangle - ±7.5 о –Number of strips on both sides –Number of readout chips for both sides st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor N-side Contact Pads 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side poly-Si resistors 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side p-stops configuration 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
N-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1 st and 2 nd metal 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1 st and 2 nd metal details 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
P-side Guard Rings 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Results Number of masks: N-side – 8 P-side – 9 Estimated production time - 3 months + 1 month for masks production. 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Expected Full Depletion Voltage (FDV) - <50 V Working voltage – V Dark current at 100 V – < 15 nА/см 2 AC capacitance - >10 pF/см Capacitors breakdown voltage - >170 V Bias resistor value ± 0.4 MOhm Number of bad strips - <0.5%/side 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Last This work have been done within CBM- MPD STS Consortium and supported by ISTC, see Yu. Murin presentation 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia