Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Talbot self-imaging effect with monochromatic (a) and broadband (b) radiation. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. The extreme ultraviolet (EUV) broadband spectrum produced by laboratory source used for simulations. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. The mask layout used in simulations. Optical parameters used are: niobium (Nb) membrane, n= , κ=0 and nickel (Ni) absorber, n= , κ=− at 10.9 nm, where n and κ is real and imaginary part of the refractive index, respectively. 42 Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Scheme of the setup for polarization-dependent simulations. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Monochromatic Talbot patterns for 15-nm half-pitch for transverse electric (TE) (a), transverse magnetic (TM) (b), and unpolarized (c) radiation. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Intensity and contrast curves as a function of the half pitch of the mask under monochromatic illumination with TE-polarized wave of 10.9 nm wavelength. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Simulated intensity profiles (a) and dependence of maximal intensity and pattern contrast on the ratio of the space to pitch (b). Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. Achromatic Talbot patterns with TE, TM, and unpolarized illuminations (a–c) for 15-nm half-pitch grating. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. The cross-sections of aerial images for achromatic TE and unpolarized illumination at the distance of 6 μm from the grating. The resulting aerial image half pitch is 7.5 nm. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. The contrast and maximal intensity of achromatic Talbot patterns at the plane of zM as a function of the half pitch on the mask. The resulting half pitch in the aerial image is a half of the masks half pitch. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM

Date of download: 9/17/2016 Copyright © 2016 SPIE. All rights reserved. The contrast and intensity curves at the first Talbot plane in dependence on the half pitch on the mask. Figure Legend: From: Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources J. Micro/Nanolith. MEMS MOEMS. 2013;12(3): doi: /1.JMM