Tests on Sintef/Standford IZM (Nov09) and AMS (May10) 17 Dec 2009 Alessandro Rovani, Claudia Gemme, Gianluca Alimonti, Nanni Darbo INFN Genova/Milano 17.

Slides:

Advertisements

Similar presentations

Sensors irradiated Calibration and Measurement at Genova A.Rovani, C.Gemme, A. Micelli 3D Irst test in Genova – June 30,

Advertisements

The ATLAS Pixel Detector

UK – quad module. Experience with FE-I4 UK groups relatively new to ATLAS pixel Have 5 USBPix systems up and running now – Glasgow, Edinburgh, Manchester,

Reviewer’s Mandate G. Darbo – INFN / Genova Sensor Review, 4 May 2011 o Sensor Review Slides for Jörn Talk IBL Sensor Review Kick-off Meeting CERN, May,

SINTEF Wafers We studied two wafers. Wafer #24 and one oxygenated wafer.

Ladder QA Status. Ladder QA Summary Ladder Remarks 1XXXXXXXXOOOOOXOO left : short (via-GND) right chip3 : cannot mask 2OOOOOOOOOOOOOOO.

Status and outlook of the Medipix3 TSV project

3D chip and sensor Status of the VICTOR chip and associated sensor Bonding and interconnect of chip and sensor Input on sensor design and interconnection.

March 20, 2001M. Garcia-Sciveres - US ATLAS DOE/NSF Review1 M. Garcia-Sciveres LBNL & Module Assembly & Module Assembly WBS Hybrids Hybrids WBS.

1 IC Wafer Thinning Desired thickness goal for front-end ICs on modules is 150  Prototype results obtained so far have used mechanical thinning(grinding)

Fabian Hügging – University of Bonn – February WP3: Post processing and 3D Interconnection M. Barbero, L. Gonella, F. Hügging, H. Krüger and.

FPIX_flip_chip_test module calibration tests November 14 th 2012.

The ATLAS Insertable B-Layer (IBL) Project C. Gemme, INFN Genova On behalf of the ATLAS IBL COllaboration RD11 Firenze July 2011.

2. Super KEKB Meeting, DEPFET Electronics DEPFET Readout and Control Electronics Ivan Peric, Peter Fischer, Christian Kreidl Heidelberg University.

P. Riedler- GGT Meeting 3/4/20061 Status of Sensor Irradiation and Bump Bonding P. Riedler, G. Stefanini P. Dalpiaz, M. Fiorini, F. Petrucci.

VTT ASSEMBLY 5 CHARACTERISATION KATE DOONAN & RICHARD BATES 2012.

Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN

Guido_Tonelli / CMS_TSC / 5 February Time stability of ST sensors The problem The sensors re-measuring campaign Failure analysis Conclusions.

Foundry Characteristics

Update on Micron productions - Comparison of AC & DC coupled devices - Marko Milovanovic*, Phil Allport, Gianluigi Casse, Sergey Burdin, Paul Dervan, Ilya.

2 Silicon pixel part Done and to be written Written! Under way To be done Introduction 1.Hybrid Pixel Assembly Concept 2.Silicon sensor 1.First thinned.

24 March 2014 The ups and downs of the MaPSA project March

Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 o Bump Bonding Selex / INFN Roma, October, 30 th 2009 G. Darbo - INFN / Genova.

Marina Artuso1 Pixel notes Topics covered –Sensor –Front end electronics –Integration: Bump bonding (including roundtable featuring AMS,IZM, VTT)

CERN, CT Workshop, ID Week, July 2 nd, 2007 Problems and solutions during the integration. Unconformities in the detector Claudia Gemme, CERN - INFN Genova.

Roadmap to the next 2015 run F. Marchetto GigaTracKer Working Group meeting Dec. 9 th 2014 a)Introductory meeting on Nov. 27, 2014 b)At that meeting several.

Bump-bonding: offers F. Marchetto INFN-Torino Technical specification doc has been prepared: Ferdinand, myself, with the help of Alex, Petra and Massimiliano.

3D sensors for tracking detectors: present and future applications C. Gemme (INFN Genova) Vertex 2013, Lake Starnberg, Germany, September 2013 Outline:

Maria Rita Coluccia Simon Kwan Fermi National Accelerator Laboratory

Transition to cables Staves Services IP Underside of stave: IBL modules IBL Design.

Phase 2 Tracker Meeting 6/19/2014 Ron Lipton

Loading stave 4000  Receiving test of modules : No problem despite some damages at one edge of few modules (AMS) One MCC failure in one module, reworked.

SuperKEKB 3nd open meeting July 7-9, 2009 Hans-Günther Moser MPI für Physik Sensor and ASIC R&D Sensor Prototype Production: running, ASICs: Switcher,

DIGITAL CLOCK Draw the schematic and the PCB.

The medipix3 TSV project

Anna Maria Fiorello - Research Dept ATLAS-Pixel Project: Bump Bonding ATLAS BUMP BONDING PROCESS.

Comparison of the AC and DC coupled pixels sensors read out with FE-I4 electronics Gianluigi Casse*, Marko Milovanovic, Paul Dervan, Ilya Tsurin 22/06/20161.

PIXEL 2000 P.Netchaeva INFN Genova 0 Results on 0.7% X0 thick Pixel Modules for the ATLAS Detector. INFN Genova: R.Beccherle, G.Darbo, G.Gagliardi, C.Gemme,

Page 1 Liverpool January 11th, 2012 LHCb Upgrade Meeting Planar Silicon Detectors I. Tsurin Generic sensor R&D ATLAS-oriented commitments LHCb-oriented.

O Pixel R&D Projects Meeting – HVR_CCPD: HybridizationG. Darbo – INFN / Genova Milano, 8 June 2015 HVR_CCPD: Hybridization Pixel R&D Projects Meeting Milano,

ATLAS Pixel Upgrade G. Darbo - INFN / Genova LHCC- CERN 1/76/2008 o Pixel/B-layer Developments LHCC Upgrade Session CERN, 1 / 7 / 2008 G. Darbo - INFN.

Manchester, 24/02/2010 G.-F. Dalla Betta The common floor-plan of the ATLAS IBL 3D sensor prototypes Gian-Franco Dalla Betta (Univ. Trento and INFN) for.

HV2FEI4 and 3D A.Rozanov CPPM 9 December 2011 A.Rozanov.

OMEGA3 & COOP The New Pixel Detector of WA97

Testsystems PXD6 - testing plans overview - by Jelena NINKOVIC Hybrid Boards for PXD6 - by Christian KOFFMANE Source measurements on DEPFET matrices using.

The timing upgrade project of the TOTEM Roman Pot detectors

Study of Indium bumps for the ATLAS pixel detector

10-12 April 2013, INFN-LNF, Frascati, Italy

LHC1 & COOP September 1995 Report

Preliminary results from 3D CMS Pixel Detectors

FBK / INFN Roma, November , 17th 2009 G. Darbo - INFN / Genova

Summary of discussion in 3D Design Group during ITk Week

CCPD Hybridization AIDA-2020 Annual Meeting – WP6 DESY, 15 June 2016

Results achieved so far to improve the RPC rate capability

Hybridization Studies: SU8, Assembly

Hybrid Pixel R&D and Interconnect Technologies

Highlights of Atlas Upgrade Week, March 2011

Sensor Wafer: Final Layout

HV-CMOS Update The properties device (HVStripV1) we just Birmingham

Thin Planar Sensors for Future High-Luminosity-LHC Upgrades

Production of 3D silicon pixel sensors at FBK for the ATLAS IBL

UCSB Short-term Testing Plan

Pierluigi Paolucci - I.N.F.N. Naples

Summary of 3D SINTEF CMS pixel sensors R&D at Purdue

UCSB Short-term Testing Plan

Mentor: Chris Kenney 12 August 2010

Full list of devices of May09

1INFN Sez. Bari, 2Università degli Studi di Bari “A. Moro”

Pierluigi Paolucci & Giovanni Polese

3E7_05151 wafer 11 IV curve Noise ~122e Source scans bad and

Presentation transcript:

Tests on Sintef/Standford IZM (Nov09) and AMS (May10) 17 Dec 2009 Alessandro Rovani, Claudia Gemme, Gianluca Alimonti, Nanni Darbo INFN Genova/Milano 17 devices IZM bumped received on Nov 16. FE electronic wafer AGD525X 8 devices AMS bumped received in May FE electronic wafer S789IUX

Selex Two Sintef wafers of the same batch bump-bonded last year at IZM have been bump-bonded at Selex –ATLAS FE-I3 and CMS assemblies flip-chipped –Dicing sensors was troublesome: dies detached from sticky tape used in the process. Diamond saw uses a “water” process during dicing. Selex claims they never had such problem in the past (~thousands of sensors handled for ATLAS Pixel) –Cut edge is very irregular from support wafer side, clean (~150µm from active edge) on bump side (see photos) –4+4 assemblies flipped sent to Genova this week: 5 put on single chip board and tested.

Wafer 1: B2-6 Received assemblies from Selex

Wafer 2: B4 Received assemblies from Selex

Diced assembly 150 µm

Bump side

Compare bump/back side Bump-side – Magnification = x200 Back-side – Magnification = x200 Left side Right side Front side does not show dicing damage. Is only support wafer damaged? Or impacts the sensor?

Sensor Wafer FEI3SensorLV 20V (e) B /12 ->68/5119 (no effect when blowing) NOT DONE (1V) B /11-> 69/ >0.36 (FAN)180 B /11-> 75/ > 4.4 (FAN)250 B /11 -> 66/ (no effect when blowing) NOT DONE (1V) B /11->66/14617,6NOT DONE (2V) B /11->70/ eGE B /11->66/15020NOT DONE (2V) B /21 -> 214/ >10.7 (FAN)Good dig, bad analog B /24-> 270/ > 0.29 (FAN)Good dig, bad analogBonn B /27->285/149Isteresi ( 1-7;3 -16)Good dig, bad analog B /12 -> 76/ > (FAN)400 eBonn B /11-> 71/ e but col 15,16,17 bad B /35->320/1514.1Good dig, bad analog B LV in short 0.40Not possible B /11 -> 66/ > 0.58 (FAN)400 e B /20->285/1501.7Good dig, bad analog B /11 -> 68/ > 0.62 (FAN)250 but xtalkGE SINTEF/IZM

General comments on IZM Almost all devices have high current on HV. As a 1MOhm resistance is between the PS and the DUT, a significant voltage reduction is expected in case of high current on the device. Some devices have unusually high LV currents (main on Analog supply): they work digitally but analog injection is bad. We have observed IV worsening in time after some handling or testing (difficult to track). We have also observed devices initially becoming bad in LV current consumption.. Never observed an improvement in time (also drying has no effect). Some devices work fine, even with high leakage current. However noise is relatively high and we just could tune one device at relatively high threshold.

Sensor Wafer FEI3SensorLV 20V (e) B Not loaded B /13020 B /5018Analog inj bad B Not loaded B Not loaded B /5320Analog inj bad B /13020 B / SINTEF/AMS All devices have high current on HV. As a 1MOhm resistance is between the PS and the DUT, a significant voltage reduction is expected in case of high current on the device. Some devices have unusually high LV currents (main on Analog supply): they work digitally but analog injection is bad.