報告人: K.C Hung. Outline  INTRODUCTION  EXPERIMENTAL DETAILS  RESULTS AND DISCUSSION  CONCLUSION  REFERENCES 2.

Slides:



Advertisements
Similar presentations
Proposed by Read in Negative resistance is achieved by creating a delay (180 0 Phase shift) between the voltage and current. Delay is achieved by,
Advertisements

Chapter 9. PN-junction diodes: Applications
Modelling power LEDs in SPICE with selfheating taken into account Krzysztof Górecki Department of Marine Electronics Gdynia Maritime University, POLAND.
Cell and module construction. Photovoltaic effect and basic solar cell parameters To obtain a potential difference that may be used as a source of electrical.
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.
Spring 2007EE130 Lecture 23, Slide 1 Lecture #23 QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = High =
Spring 2007EE130 Lecture 22, Slide 1 Lecture #22 OUTLINE The Bipolar Junction Transistor – Introduction Reading: Chapter 10.
Studies of Minority Carrier Recombination Mechanisms in Beryllium Doped GaAs for Optimal High Speed LED Performance An Phuoc Doan Department of Electrical.
EE105 Fall 2007Lecture 4, Slide 1Prof. Liu, UC Berkeley Lecture 4 OUTLINE Bipolar Junction Transistor (BJT) – General considerations – Structure – Operation.
Lecture #25 OUTLINE BJT: Deviations from the Ideal
Chapter V July 15, 2015 Junctions of Photovoltaics.
SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Bipolar Junction Transistor (1) SD Lab. SOGANG Univ. BYUNGSOO KIM.
CHAPTER TWO THE PHOTOVOLTAIC EFFECT 2e A G.I. Module Energie Solaire Copyright, 2006 © Ahmed S. Bouazzi المدرسة الوطنية للمهندسين بتونس.
Avalanche Transit Time Devices
1 Numerical study on efficiency droop of blue InGaN light-emitting diodes Yen-Kuang Kuo*, Jih-Yuan Chang, and Jen-De Chen Department of Physics, National.
A Comparison between Electroluminescence Models and Experimental Results D. H. Mills 1*, F. Baudoin 2, G. Chen 1, P. L. Lewin 1 1 University of Southampton,
Introduction Trapped Plasma Avalanche Triggered Transit mode Prager
Carrier Transport Phenomena And Measurement Chapter 5 26 February 2014
Empirical Observations of VBR
President UniversityErwin SitompulSDP 8/1 Dr.-Ing. Erwin Sitompul President University Lecture 8 Semiconductor Device Physics
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
報告人 : 洪國慶. Outline INTRODUCTION EXPERIMENTAL DETAILS RESULTS AND DISCUSSION CONCLUSION REFERENCES 2.
Bipolar Junction Transistor (BJT). OUTLINE – General considerations – Structure – Operation in active mode – Large-signal model and I-V characteristics.
P-type semiconductorn-type semiconductor p-n junction formation electron photon electron hole p-n Diode Formation & Application as a PV solar cell.
Photoluminescence and Photocurrent in a Blue LED Ben Stroup & Timothy Gfroerer, Davidson College, Davidson, NC Yong Zhang, University of North Carolina.
Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction BJT Fundamentals Reading: Pierret 10; Hu 8.1.
Modeling of the device SEYED AHMAD SHAHAHMADI Principal supervisor: Prof. Dr. Nowshad Amin.
PRACTICAL # 11 Introduction to light emitting diode (LED), its working principle and terminal identification By:Engr.Irshad Rahim Memon.
Basic model p n +- Characteristics of a Schottky diode and a PN junction diode.
Semiconductor Device Physics
Lecture 14 OUTLINE pn Junction Diodes (cont’d)
Y.W. Lin. Outline Introduction Experiments Results and Discussion Conclusion References.
P.K. Lin 1.
Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes 1 Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun.
1 Concepts of electrons and holes in semiconductors.
CSE251 Lecture 8: Introduction to Bipolar Junction Transistor (BJT)
(a)luminescence (LED) (b)optical amplifiers (c)laser diodes.
Modelling LED Lamps with Thermal Phenomena Taken into Account Krzysztof Górecki and Przemysław Ptak Gdynia Maritime University Department of Marine Electronics.
Lecture 11 OUTLINE pn Junction Diodes (cont’d) – Narrow-base diode – Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5.
It converts light energy into electrical energy.
Lecture 12 OUTLINE pn Junction Diodes (cont’d) Junction breakdown
PN-junction diodes: Applications
Y.Y CHEN.
Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction
Chapter 10 BJT Fundamentals. Chapter 10 BJT Fundamentals.
Electron-hole pair generation due to light
5.4 Reverse-Bias Breakdown
Part -3 Diode characteristics
Investigation of Efficiency Droop Behaviors of
Lecture #22 OUTLINE The Bipolar Junction Transistor
Lecture #25 OUTLINE BJT: Deviations from the Ideal
Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction
Semiconductor Device Physics
Deviations from the Ideal I-V Behavior
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 25 OUTLINE The Bipolar Junction Transistor Introduction
Physics of Bipolar Junction Transistor
Introduction of Master's thesis of Jih-Yuan Chang and Wen-Wei Lin
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 4 OUTLINE Bipolar Junction Transistor (BJT)
Lecture 12 OUTLINE pn Junction Diodes (cont’d)
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 12 OUTLINE pn Junction Diodes (cont’d)
Lecture 12 OUTLINE pn Junction Diodes (cont’d) Junction breakdown
PRINCIPLE AND WORKING OF A SEMICONDUCTOR LASER
Carrier Transport Phenomena And Measurement Chapters 5 and 6 22 and 25 February 2019.
Carrier Transport Phenomena And Measurement Chapters 5 and 6 13 and 15 February 2017.
Carrier Transport Measurements Including Hall Effect Chapters 5 and 6 17 and 19 February 2016.
Presentation transcript:

報告人: K.C Hung

Outline  INTRODUCTION  EXPERIMENTAL DETAILS  RESULTS AND DISCUSSION  CONCLUSION  REFERENCES 2

INTRODUCTION The origin of efficiency droop is still being debated, and the phenomenon is attributed to various causes including Auger recombination processes, electron overflow, and inefficient hole injection and transport mechanisms The underlying cause of efficiency droop is that for higher operating power density , LEDs are driven at higher currents. we suggest a solution to the efficiency droop problem by proposing cascaded structures where high optical output power can be obtained at low current density. We show that it is possible to cascade multiple p-n junctions using visible transparent tunnel junctions (TJs) with low resistance and negligible voltage drop tunneling-based carrier regeneration in cascaded multiple active region LED structures. Higher luminous output power can be achieved by increasing the operating voltage, rather than the current, leading to unprecedented power density and efficiency for III-nitride LEDs. 3