Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Active region of the modulation-doped SiGe∕Si multilayer structure for optical modulation (nid: nonintentionally doped). Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Bandgap energy of Si1−xGex alloys as a function of Ge fraction. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Critical layer thickness of Si1−xGex alloys as a function of Ge fraction. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Evolution of hole density distribution in a three Si0.8Ge0.2 layer structure as a function of the applied reverse bias. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Modulation-doped multiple SiGe∕Si heterostructure integrated into a single-mode SOI rib waveguide. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Valence band energy profiles for a six Si0.8Ge0.2 layer MD multiple SiGe∕Si heterostructure for 0V (left) and −6V (right) p-i-n diode bias, respectively. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Optical power transmittance of an FP cavity with the definition of the modulator ON and OFF states. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Optical properties of the optimized MD multiple SiGe∕Si modulator integrated into an FP resonant cavity with Bragg mirrors properties given by optical power reflectance (R), transmittance (T), and loss (D) of, respectively, 75, 10, and 15%. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Schematic of the integration of the MD multiple SiGe∕Si heterostructure in the two arms of an MZI. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /

Date of download: 9/19/2016 Copyright © 2016 SPIE. All rights reserved. Optical power transmittance of a symmetric 3.8-mm-long MZI as a function of the effective index variation and the applied reverse- bias voltage. Figure Legend: From: Design of a modulation-doped SiGe∕Si optical modulator integrated in a submicrometer silicon-on-insulator waveguide Opt. Eng. 2005;44(8): doi: /