Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Slides:



Advertisements
Similar presentations
COMSATS Institute of Information Technology Virtual campus Islamabad
Advertisements

Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
SMALL SIGNAL BJT AMPLIFIER
Recall Lecture 13 Biasing of BJT Applications of BJT
COMSATS Institute of Information Technology Virtual campus Islamabad
Pnp transistor ECE Electronics - Dr. S. Kozaitis- Florida Institute of Technology – Fall 2002.
Chapter 4 – Bipolar Junction Transistors (BJTs)
Bipolar Junction Transistors (BJTs) 1.
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Chapter 13 Small-Signal Modeling and Linear Amplification
Recall Last Lecture Biasing of BJT Applications of BJT
Bipolar Junction Transistor (BJT)
Dr. Nasim Zafar Electronics 1: EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Chapter 4 DC Biasing – Bipolar Junction Transistors (BJTs)
BJT Fixed Bias ENGI 242 ELEC 222. January 2004ENGI 242/ELEC 2222 BJT Biasing 1 For Fixed Bias Configuration: Draw Equivalent Input circuit Draw Equivalent.
Chapter 6: Bipolar Junction Transistors
A.1 Large Signal Operation-Transfer Charact.
Part B-3 AMPLIFIERS: Small signal low frequency transistor amplifier circuits: h-parameter representation of a transistor, Analysis of single stage transistor.
COMSATS Institute of Information Technology Virtual campus Islamabad
Figure 6.59 Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB. Both result in wide variations in IC and hence in VCE and therefore.
0 Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure.
Chapter 5 Transistor Bias Circuits
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Bipolar Junction Transistors (BJTs) 1.
ANALOG ELECTRONIC CIRCUITS 1
BJT amplifier & small-signal concept
Transistor Circuit DC Bias Part 1 ENGI 242. February 2003ENGI 2422 DC Biasing Circuits Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Collector-Emitter.
1 TRANSISTOR AMPLIFIER CONFIGURATION -BJT Common-Emitter Amplifier- By: Syahrul Ashikin Azmi School of Electrical System Engineering.
TRANSISTOR AMPLIFIER CONFIGURATION -BJT Common-Emitter Amplifier-
Chapter 5 Transistor Bias Circuits
SJTU Zhou Lingling1 Chapter3 Bipolar Junction Transistor (BJT)
Chapter 4(b) DC Biasing – Bipolar Junction Transistors (BJTs)
Prepared by: Garima Devpriya ( ) Jamila Kharodawala ( ) Megha Sharma ( ) ELECTRONICS DEVICES AND CIRCUITS G.H.Patel.
Lecture 10:Load Line & BJT Biasing CSE251. DC Biasing To establish a constant dc collector current in the BJT. Biasing is required to operate the transistor.
Chapter 6 BJT Amplifiers
Chapter 5 Transistor Bias Circuits. Objectives  Discuss the concept of dc biasing of a transistor for linear operation  Analyze voltage-divider bias,
The Bipolar Junction Transistor
1 Bipolar Junction Transistors (BJTs). Copyright  2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Figure.
ECE 333 Linear Electronics Chapter 7 Transistor Amplifiers How a MOSFET or BJT can be used to make an amplifier  linear amplification  model the linear.
SUB.TEACHER:- MR.PRAVIN BARAD NAME:-SAGAR KUMBHANI ( ) -VIKRAMSINH JADAV( ) -PARECHA TUSHAR( ) TOPIC:-LINEAR AMPLIFIER(BJT.
MOSFET Basic FET Amplifiers The MOSFET Amplifier
Chapter 4 – Bipolar Junction Transistors (BJTs) Introduction
DC Biasing - BJTs Chapter 4 Boylestad Electronic Devices and Circuit Theory.
Chapter 13 Small-Signal Modeling and Linear Amplification
LECTURE 1: BASIC BJT AMPLIFIER -AC ANALYSIS-
BJT Amplifiers.
Recall Last Lecture Biasing of BJT Applications of BJT
Recall Last Lecture Biasing of BJT Three types of biasing
Recall Last Lecture Biasing of BJT Three types of biasing
Amplifier: An amplifier is an electronic device that increases voltage, current or power of a signal. According to the class of operation, the amplifiers.
Recall Last Lecture Biasing of BJT Three types of biasing
Lecture 4 Bipolar Junction Transistors (BJTs)
Bipolar Junction Transistors (BJTs)
Recall Lecture 13 Biasing of BJT Voltage Divider Biasing Circuit.
Small-Signal Modeling and Linear Amplification
Chapter 5: BJT AC Analysis
ME3000 ANALOG ELECTRONICS [Slide 3] DC Biasing BY DREAMCATCHER
Lecture 07 Bipolar Junction Transistors (2)
Chapter 5 Transistor Bias Circuits
ECE 333 Linear Electronics
Bipolar Junction Transistor
TRANSISTOR AMPLIFIER CONFIGURATION -BJT Common-Emitter Amplifier-
Lecture’s content Objectives BJT – Small Signal Amplifier
ChapTer FoUr DC BIASING - BIPOLAR JUNCTION TRANSISTORS (BJTs)
DC Biasing Circuits.
CHAPTER 59 TRANSISTOR EQUIVALENT CIRCUITS AND MODELS
Presentation transcript:

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad

Biasing in BJT Amplifier Circuits and Small-Signal Operation and Models Lecture No. 22 Contents:  Graphical Analysis of the BJT Amplifier Circuits.  Biasing the BJT for Discrete-Circuit Design.  Small-Signal Operation and Models. Nasim Zafar2

Graphical Analysis of the BJT Amplifier Circuits Reference:  Chapter Microelectronic Circuits Adel S. Sedra and Kenneth C. Smith.

The BJT Circuits The DC Biased BJT CircuitThe BJT Amplifier Circuit

The Transistor Amplifier Circuit (a) Conceptual circuit to illustrate the operation of the transistor as an amplifier. (b) The circuit of (a) with the signal source v be eliminated for dc (bias) analysis.

Transistor Biasing as an Amplifier Circuit:  The purpose of dc biasing is to establish the Q-point for operation.  The collector curves and load lines help us to relate the Q-point and its proximity to cutoff and saturation.  The Q-point is best established where the signal variations do not cause the transistor to go into saturation or cutoff.  What we are most interested in is, the ac signal itself. Since the dc part of the overall signal is filtered out in most cases, we can view a transistor circuit in terms of just its ac component.

Review: Sinusoidal Analysis  Any voltage or current in a linear circuit with a sinusoidal source is a sinusoid of the same frequency (  ). – We only need to keep track of the amplitude and phase, when determining the response of a linear circuit to a sinusoidal source.  Any time-varying signal can be expressed as a sum of sinusoids of various frequencies (and phases).  Applying the principle of superposition: – The current or voltage response in a linear circuit due to a time- varying input signal can be calculated as the sum of the sinusoidal responses for each sinusoidal component of the input signal.

Graphical Analysis of the BJT Amplifier  Let us consider the graphical analysis of the operation the BJT amplifier circuit:

Graphical Analysis of the BJT Amplifier (a) Graphical construction for the determination of the dc base current in the circuit. (b) Load line intersects with the input characteristic curve.

Graphical Analysis of the BJT Amplifier The dc Bias Point.  For the graphical analysis of the operation the BJT amplifier circuit; determine the dc bias point.  For this: —Set ac signal vi =0 —Determine the dc Bias Point; I B

Graphical Analysis(contd.) Graphical construction for determining the dc collector current I C and the collector-to-emitter voltage V CE in the circuit.

Graphical Analysis of the BJT Amplifier  The collector current is given by: V CC = v CE + i C R C v CE = V CC – i C R C i C R C = V CC – v CE Which represents a linear relationship between v CE and i C.

Transistor Amplifier Basics: 0 ibib + IBIB = iBiB Nasim Zafar15

Graphical Analysis(contd.) Graphical determination of the signal components v be, i b, i c, and v ce when a signal component v i is superimposed on the dc voltage V BB

Effect of Bias-Point Location on Allowable Signal Swing  Load-line A results in bias point Q A with a corresponding V CE which is too close to V CC and thus limits the positive swing of v CE.  At the other extreme, load- line Q B results in an operating point too close to the saturation region, thus limiting the negative swing of v CE.

Biasing in BJT Amplifier Circuit Section 5.5

Biasing in BJT Amplifier Circuit  Biasing with voltage  Classical discrete circuit bias arrangement  Single power supply  Two-power-supply  With feedback resistor  Biasing with current source

SJTU Zhou Lingling20 The Classical Discrete-Circuit Bias Arrangement by fixing V BE by fixing I B.

The Classical Discrete Circuit Bias Arrangement  Both result in wide variations in I C and hence in V CE and therefore are considered to be “bad.”  Neither scheme is recommended.

Classical Biasing for BJTs Using a Single Power Supply  Circuit with the voltage divider supplying the base replaced with its Thévenin equivalent.  Stabilizing the DC emitter current is obtained by considering the negative feedback action provided by R E

Classical Biasing for BJTs Using a Single Power Supply  Two constraints  Rules of thumb

A Two-Power-Supply Version  Resistor R B can be eliminated in common base configuration.  Resistor R B is needed only if the signal is to be capacitively coupled to the base.  Two constraints should apply.

Biasing with Feedback Resistor  Resistor R B provides negative feedback.  I E is insensitive to β provided that  The value of R B determines the allowable signal swing at the collector.

Biasing Using Current Source (a)Q 1 and Q 2 are required to be identical and have high β. (b)Short circuit between Q 1 ’s base and collector terminals. (c)Current source isn’t ideal due to finite output resistor of Q 2

Small Signal Operation and Models  Chapter-5.6 Microelectronic Circuits Adel S. Sedra and Kenneth C. Smith. Reference:

Small-Signal operation and Models  The Conceptual Amplifier Circuit.  Small-Signal Equivalent Circuits.  Application of the Small-Signal Equivalent Circuits.  Augmenting the hybrid π model.

The Conceptual Amplifier Circuit (a) Conceptual circuit to illustrate the operation of the transistor as an amplifier. (b) The circuit of (a) with the signal source v be eliminated for dc (bias) analysis.

Conceptual Amplifier Circuit (contd.) The DC Bias Conditions  The DC Bias Conditions by Setting the AC Signal Source v be =0

Small Signal Operation The DC Bias Conditions  The DC Bias Conditions: by Setting the Signal Source v be =0  The dc currents and voltages are given by:

Conceptual Amplifier Circuit (contd.) Current Equations:  Collector current  Base current  Emitter current

Small-Signal Operation and Models  The Collector current and the Transconductance.  The Base Current and the Input Resistance at the Base.  The Emitter Current and the Input Resistance at the Emitter.

The Collector Current and the Transconductance

The Small Signal Approximation

Transconductance

 Expression  Physical meaning g m is the slope of the i C –v BE curve at the bias point Q.  At room temperature,

Base Current and Input Resistance at the Base  To determine the resistance seen by v be, we first evaluate the total base current i B using Eq. (5.84), as follows:  Thus,  where I B is equal to I C / β and the signal component i b is given by:

Base Current and Input Resistance at the Base  Substituting I C /V T for by g m gives  The small-signal input resistance between base and emitter, looking into the base, is denoted by r π and is defined as Using Eq. (5.91) gives:

Base Current and Input Resistance at the Base  Thus r π is directly dependent on ß and is inversely proportional to the bias current I C. Substituting for g m in Eq. (5.93) from Eq. (5.87) and replacing I C / by I B gives an alternative expression for r π,

The Emitter Current and the Input Resistance at the Emitter where I E is equal to I C ⁄ α and the signal current i e is given by  The total emitter current i E can be determined from

The Emitter Current and the Input Resistance at the Emitter  If we denote the small-signal resistance between base and emitter, looking into the emitter, by r e, it can be defined as Thus, we find that r e, called the emitter resistance, is given by:

The Emitter Current and the Input Resistance at the Emitter  Thus,  Which yields

Summary Input Resistance at Base and Emitter  Input resistance at base  Input resistance at emitter  Relationship between these two resistances