Manchester, 24/02/2010 G.-F. Dalla Betta The common floor-plan of the ATLAS IBL 3D sensor prototypes Gian-Franco Dalla Betta (Univ. Trento and INFN) for the “3D Processing Working Group”: M. Boscardin, G. Darbo, C. Da Via, S. Dong, T.-E. Hansen, J. Hasi, C. Kenney, A. Kok, S. Parker, G. Pellegrini, S. Watts

Manchester, 24/02/2010 G.-F. Dalla Betta Outline Introduction & Motivation Technology and design aspects Slim edge simulations The common floor-plan Processing/testing strategy for 2010 Conclusion

Manchester, 24/02/2010 G.-F. Dalla Betta After a meeting in Liverpool in Dec. 2006, the ATLAS 3D Sensor Collaboration was started Its goal is the “Development, Testing and Industrialization of Full-3D Active-Edge and Modified-3D Silicon Radiation Pixel Sensors with Extreme Radiation Hardness” The Collaboration includes 18 Institutions and a few processing facilities: the 3D Consortium (SINTEF- Stanford), CNM, and FBK. Recently, also VTT joined. Test results in proved comparable performance for 3D sensors made at different foundries. The ATLAS 3D Sensor Collaboration

Manchester, 24/02/2010 G.-F. Dalla Betta The ATLAS pixel Insertable B-Layer (IBL) 7.6mm 8mmactive 2.8mm FE-I3 74% active 16.8mm 20.2mm ~2mm ~200 μ m FE-I4 ~89% Chartered reticule (24 x 32) IBM reticule ~19 mm New FE-I4 Pixel size = 250 x 50 µm 2 Pixels = 80 x 336 Technology = 0.13µm Power = 0.5 W/cm 2 Total area ~ 4cm 2 FE-I3 A new layer will be inserted as close and 3.4cm from the beam inside the existing pixel layers of the ATLAS experiment. The proximity to the interaction point will therefore require new radiation hard technologies for both the sensors and the front end electronics (FE-I4, biggest front end chip of this kind) See talk from G. Darbo

Manchester, 24/02/2010 G.-F. Dalla Betta Motivation In order to speed up the transition between R&D and industrialization of a novel technology like 3D, the processing facilities started a joint effort aimed at the ATLAS IBL challenge. The “3D processing working group” was started after a meeting in Venice in June 2009 to study the best strategy for the production of 3D sensors prototypes in It was decided to go for a ‘common floor-plan’ layout aimed at full mechanical compatibility and equivalence in performance of all 3D sensors produced, while maintaining the specific flavors of the different technologies.

Manchester, 24/02/2010 G.-F. Dalla Betta The available technologies DDTC Full 3D with active edge The 3D Consortium (SINTEF/Stanford) CNM FBK DDTC Full 3D - DDTC CNM and FBK also accepted to process in parallel Full 3D with active edge

Manchester, 24/02/2010 G.-F. Dalla Betta Slide from C. Da Via Venice, June 5, wafers purchased by INFN Udine

Manchester, 24/02/2010 G.-F. Dalla Betta Key design aspects To ensure full-mechanical compatibility, the following problems should be addressed: –Sensor termination (active edge vs passive edge) –Substrate bias (back-side vs front-side) To prevent bad devices from being bond- bonded, on-wafer I-V tests of pixels should be made possible The design should maximize process yield for FE-I4 and leave a reasonable number of FE-I3 samples and test structures

Manchester, 24/02/2010 G.-F. Dalla Betta FEI4 layout with ohmic fence TOP EDGE (200 um) LAT EDGE (400 um)

Manchester, 24/02/2010 G.-F. Dalla Betta LATERAL EDGE (simplified) TOP EDGE Simulation domains

Manchester, 24/02/2010 G.-F. Dalla Betta Depletion (before irrad.)

Manchester, 24/02/2010 G.-F. Dalla Betta Depletion (before irrad.) 1d cut at 100 um depth

Manchester, 24/02/2010 G.-F. Dalla Betta Depletion (after irrad.)

Manchester, 24/02/2010 G.-F. Dalla Betta Depletion (after irrad.) 1d cut at 100 um depth

Manchester, 24/02/2010 G.-F. Dalla Betta TOP LAT BEFORE IRRADIATION AFTER 5e15 1MeV n/cm2 Simulated currents TOP LAT

Manchester, 24/02/2010 G.-F. Dalla Betta The test grid A temporary metal grid shorting all pixels allows for on-wafer I-V tests and sorting of detectors suitable for bump-bonding

Manchester, 24/02/2010 G.-F. Dalla Betta Common floor-plan Wide safety Margin for all pixels (1cm) FE-I4 (8x) FE-I3 (9x) CMS (3x) Test structures at the periphery

Manchester, 24/02/2010 G.-F. Dalla Betta FE-I4 sensor  m (including scribe lines)  m (including scribe lines) Lateral extension for substrate bias tab in single-side version

Manchester, 24/02/2010 G.-F. Dalla Betta FE-I3 sensor 9930  m (including scribe lines) 7760  m (including scribe lines) Lateral extension for substrate bias tab in single-side version

Manchester, 24/02/2010 G.-F. Dalla Betta CMS sensor 9980  m (including scribe lines) 8660  m (including scribe lines) Lateral extension for substrate bias tab in single-side version

Manchester, 24/02/2010 G.-F. Dalla Betta List of structures Pixel sensor FEI4 (8x) Pixel sensor FEI3 (9x) Pixel sensor CMS (3x) Strip sensor ATLAS FE-I4-like (2x) Diode sensor ATLAS FE-I4-like (16x) Test structures for CMS pixel capacitance (7x) Diode sensor CMS-like (7x) Strip sensor pitch 80 um (4x) Diode sensor pitch 80 um (15x) Planar test structures (4x)

Manchester, 24/02/2010 G.-F. Dalla Betta Processing/testing strategy for 2010 Layout complete (to be formally approved) Processing about to start, to be completed by June/July till August/September at different foundries. Full 3D with active edge batches processed at Sintef, Stanford, CNM and FBK (20x4=80 wafers) wafers with double-sided processing also made at CNM and FBK with a similar timescale Lab tests before FE-I4 is available will be performed with FE-I3 size test samples and after bump-bonding with strip- readout compatible FE-I4 dummies. Test beam and irradiation tests have been booked for Summer/Autumn 2010.

Manchester, 24/02/2010 G.-F. Dalla Betta Conclusion We have reported on the main design and technological issues related to the “common floor-plan” of the ATLAS IBL 3D sensor prototypes The layout is ready and fabrication is starting We have adopted a non conventional collaboration model involving all the processing facilities in a joint effort As a result, we believe we have been more effective in addressing the design problems, and also the overall costs for the prototypes will be reduced Whether this strategy will be fully successful and 3D pixel sensor swill be the choice for the IBL, we will know soon !

Manchester, 24/02/2010 G.-F. Dalla Betta Acknowledgements Special thanks to Mario Paolo Giordani (INFN Udine), Heinz Pernegger (CERN), Oswin Ehrmann/Thomas Fritzsch (IZM Berlin), Gianluca Alimonti (INFN Milano) for their support