Single Anodic bonding process Temperature: 350 °C Na + O-O- O-O- O-O- O-O- O-O- Silicon Pyrex Voltage: 1000 V - ions start to move to the opposite pole.

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Presentation transcript:

Single Anodic bonding process Temperature: 350 °C Na + O-O- O-O- O-O- O-O- O-O- Silicon Pyrex Voltage: 1000 V - ions start to move to the opposite pole Na 2 O Si

Single Anodic bonding process Current: ~15 mA  10 % initial value Na + O OOOOO Si Bad bonding  defects -Perfect cleaning of the surfaces -High voltage -High temperature -Low surface roughness

Single Anodic bonding process SB6 bonding machine in CMi cleanroom Sperimental set-up in LMIS4 lab 350°C ½ h I init I init / 10 V bond Time Bond Gently cooling

Test in LMIS4 lab Electrodes -Oven -Voltage source -Amperometer -Voltmeter

Test in LMIS4 lab Bonding set-up + - Text VI MCN V mA Aus Ein Anode Silicon Pyrex Pyrex Dirt Cathode Nabertherm Program Controller S27 __.__mA __.__V

Double Anodic bonding process Pyrex Silicon Na 2 O Si Silicon Si In literature the double anodic bonding has already been done with thick Pyrex wafers! Aim= bonding three wafers at the same time…

Silicon Pyrex Na 2 O Si Double Anodic bonding process Silicon Si O O O O O O Temperature: 350°C Voltage: 400 V Now what we are doing is….

Silicon Pyrex Na 2 O Si Double Anodic bonding process Si O O O O O O Temperature: 350°C Voltage: 400 V We would like to…. Silicon Pyrex Na 2 O Si O O O O O O Hole in the cover wafer to reach the Pyrex Pyrex layer too thin!!!!

Anodic bonding program -Build a new bonder machine -New electrode with a hole and a wire inside to reach the Pyrex -Connect the voltmeter and amperometer to the pc through the RS232 interface -Make tests according to the recepies found in the state of art -Adding pressure?