Welcome to CRYSYS The leading supplier of high quality GaAs substrates Shinsung C&T Inc. Namdong Industrial Complex 442-82 Nonhyun-Dong, Namdong-Gu Incheon, 405-848, KOREA T) 82-32-816-6796 F) 82-32-816-6797 E-mail) ydyoon@crysys.co.kr

Who is CRYSYS? History Business 6N &7N Polycrystalline GaAs synthesis 3/2014 : Separate from Shinsung C&T 4/2014 : Establish new company Seoul [Korea map] Plant (Incheon) Business - GaAs wafer : 2”, 2.5”, 3”, 4”  Semi-conducting (SC)  Semi-insulating (SI) - GaAs polycrystalline 6N &7N Polycrystalline GaAs synthesis by VGF method - GaAs ingot

Gallium Arsenide - A Very Special Material GaAs conducts electrons with high velocity and can easily transform electrical current into light. Speed + Luminescence GaAs substrates : - Used for high frequency applications, such as amplifiers, receivers and switches in mobile phones and wireless networks - LEDs help to save valuable electricity in solid state lamps - Semiconductor laser (LD) : To play DVDs

GaAs Wafer Applications

Carrier concentration Orientation /Off orientation Products (GaAs ingot) (GaAs polycrystalline) Parameter Unit 2” wafer 3” wafer 4” wafer Growth method VGF Dopant Si Si, Undoped Carrier concentration /cm3 (0.05~4)x1018 (0.1~4)x1018 EPD /cm2 < 500 < 500, < 3,000 Orientation /Off orientation Upon request

Wafer Specifications (SC Type) Parameter Unit Diameter 2” 3” 100 mm Growth method VGF Dopant Si Conductivity type N Carrier Concentration /cm3 (0.05~4)×1018 (0.1~4)×1018 Resistivity ·cm (15~0.8)×10-3 Mobility cm2/Vs (3.5~1.5)×103 EPD Average /cm2 < 3102 < 1103 mm 50.8  0.5 76.2  0.5 100  0.5 Thickness m (240~400)  25 (300~625)  25 (350~625)  25 Orientation (1,0,0)  0.5 Off orientation Upon request Major flat length 16.0  1.5 22.2  1.5 32.5  1.5 Minor flat length 7.0  1.5 11.2  1.5 18  1.5 TTV 5 Bow 10 Warp Laser marking Polished surface P/P, P/E, As-cut

Wafer Specifications (SI Type) Parameter Unit Diameter 2” 3” 100 mm Growth method C-controlled VGF Dopant None Carrier Concentration /cm3 N/A Resistivity ·cm > 1×107 Mobility cm2/Vs > 6,000 EPD Average /cm2 < 3,000 < 5,000 mm 50.8  0.5 76.2  0.5 100  0.5 Thickness m (300~450)  25 (350~625)  25 625  25 Orientation (1,0,0)  0.5 Off orientation Upon request Major flat length 16  15 22.2  1.5 32.5  1.5 Minor flat length 7  1.5 11.2  1.5 18  1.5 TTV 5 TIR Bow 7 10 Warp Laser marking Polished surface P/P, P/E, As-cut

Manufacturing Process GROWING SHAPING SLICING EDGE GRINDING LAPPING ETCHING ETCHED STORE POLISHING CLEANING INSPECTION PACKING F/G STORE SHIPPING CHARGE PREPARATION CROPPING GRINDING INGOT STORE

Crystal Growth Technology VGF : Vertical Gradient Freeze Lowest possible temperature gradient • Home-made, fully automated VGF furnace • Furnace design and process development supported by advanced numerical simulation • Perfect diameter control due to crucible - (2 inch ~ 6 inch) • Outstanding radial symmetry, Low axial and radial temperature gradients (below 1 K/cm) • Lowest defect density available - Lower than 100/cm2 for 3, 4 inch SC wafer - 3,000/cm2 for 100 mm SI wafer

Comparison of Growth Methods VGF LEC HB Wafer Size 2” ~ 6” 3” ~ 6” ~ 2.5” Etch Pit Density Very low High Low Residual Strain Carbon Control Good - Stoichiometry/EL2 Control Moderate Poor Equipment Cost Labor Cost Amount of Waste Material

Competitive Background Cost and Quality Competitive • Automated, home made VGF furnace - Very low equipment cost and labor cost - Reduction of infrastructure cost (Electric power, Waste water etc.) - Yield improvements of crystal growth • World best crystal quality - Lowest Etch Pit Density (EPD) - Uniformity of electrical parameters on ingot and wafer • Improved wafer manufacturing technology (VGF Furnace)

Progress of Wafer Production 20,000 40,000 6,000 8,000 100,000 Y2014 Y2015 Y2016 Y2017 Y2018 Yearly, avg. 32% Capa. Up Unit : Slice/month

Technical Roadmap 2014 2015 2016 2017 2”, 3”, 4” 6” 8” Wafer Size 2”, 3”, 4” 6” 8” Applications Opto-Electronics (LED, LD, Solar cell) Micro-Electronics (Digital IC, Analog IC:GaAs MMIC) Wafer Type Semi-Conducting Semi-Insulating Wafer Description GaAs Sapphire InP, GaN