Modeling of Quantum Noise with Electron-Phonon Interactions Objective: Noise modeling for nanoscale devices with electron-phonon interactions Development of NEGF-based numerical simulators Approach: Model random motion of electrons due to various noise sources such as Contact injection Random transmission Electron-phonon interactions Silicon nanowire transistors with diameter 4 nm, length 30 nm Impact: Suggested a general approach to the quantum noise calculations Shot noise phenomena are investigated. Electron density, transfer function, and noise contribution spectrums (left) Drain current noise characteristics in the weak-inversion and strong-inversion regimes (right) Result: Pauli’s exclusion principle and the long-range Coulomb interactions suppress shot noise in the strong inversion regime.