Using a laser to place known good die at 100 million units/hour

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Presentation transcript:

Using a laser to place known good die at 100 million units/hour massively-parallel laser die placement Using a laser to place known good die at 100 million units/hour July 2017

Uniqarta, Inc. Founded 2013 Cambridge, MA and Fargo, ND Ultra-thin chip assembly Founded 2013 Cambridge, MA and Fargo, ND Six employees (3 PhD’s) Funded by individual investors and government grants flexible display driver Ultra-fast chip assembly Laser Enabled Advanced Packaging (LEAP)

Emerging Electronics Require New Manufacturing Capabilities Thinner/Flexible Faster/Cheaper Internet-of-Things Wearable Electronics LED Lighting Displays Structural Electronics

Today’s Placement Technology is Unusable for Tomorrow’s Products Emerging Display/Lighting Products Require Placement of Millions of LEDs If today’s placement technology is used: Manufacture time for one unit: >1 month Minimum LED size: 300 µm (10-50X larger than required

Laser-Enabled Massively Parallel Transfer Ultra-fast placement (>100 million units/hour) Known good die selectivity Wide range of component types and sizes Large or small display formats

Actuation Mechanism: Thermo-Mechanical Laser Transfer Diced wafer attached to transparent carrier Laser focused at selected die Dynamic release layer blisters -> detaches die from carrier -> directs it to substrate laser pulse transparent carrier dynamic release layer die 10 – 100 µm substrate 3D confocal image of DRL blisters (blister side up) DRL blister (post-die release)

Laser Actuation Enables Ultra-High Placement Rates Laser blistering mechanism: 50 µs Places dies >1000x faster than mechanical means Beam scanning: 8 m/s Places dies in rapid succession Beam splitting Places multiple dies in parallel

Single- and Multi-Beam Modes Used for Known-Good-Die Placement 1. Bad Die Removal single-beam mode 2. Good Die Placement multi-beam mode 3. Fill-In single-beam mode transfer field bad dies Wafer placed dies fully- populated substrate Substrate (none) missing dies

Modeled Placement Rates wafer movement wafer replacement beam scanning bad die removal & replacement today’s placement rates: 0.01 – 0.05 M/hr 5.5 Inches 70 Inches 1080p 4K

Multi-beam Arrays Most Effective at High Wafer Yields today’s placement time: 20 – 100 days 4K Resolution, 70 Inches 4K Resolution, 5.5 Inches

Simultaneous 5x5 Array Transfers Demonstrated view from above looking through glass carrier 5x5 array transfer video glass carrier untransferred dies on carrier underside locations of previously transferred dies 5x5 array to be transferred die size: 45x45 µm Mechanical stepper being replaced by electronic scanner 4Q17

2017 Development Activity Scanned arrays Reduced die size MiniLED and microLED circuit connections Improved accuracy