Development of Silicon Microstrip Sensors in 150 mm p-type Wafers

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Presentation transcript:

Development of Silicon Microstrip Sensors in 150 mm p-type Wafers Y. Unno, S.Terada, Y.Ikegami, T. Kohriki, K.Hara, and the ATLAS R&D collaboration of "Development of non-inverting Silicon strip detectors for the ATLAS ID upgrade" K. Yamamura, S. Kamada (Hamamatsu Photonics) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Some History of Development 1995 p-type 4-inch (100 mm) wafer (p95) FZ(111) (~6 kΩcm) wafers 2005 p-type 4-inch (100 mm) wafer (ATLAS05) FZ(111) (~6k Ωcm) MCZ(100) (~900 Ωcm) wafers 2006 p-type 6-inch (150 mm) wafer (ATLAS06) FZ-1(100)(~6.7k Ωcm), FZ-2(100)(~6.2k Ωcm) MCZ(100)(~2.3k Ωcm) 2007 p-type 6-inch (150 mm) wafer (ATLAS07) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

p95 p-type Sensors A prototype n-in-p sensor was fabricated in 1995 6 cm x 3 cm x 300 um, 50 um pitch, common p-stop no DC-field plate over p-stop p-bulk, (111), ~6 kΩcm Irradiated up to 1.1 x 1014 p/cm2 at 12 GeV PS at KEK A report was made in NIM A383(96)159 Re-measurements after 10yrs (irrad. stored at 0 C) I-V C-V CCE with laser Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS05 p-type Sensors Investigation of isolation of n-strips p-stop with/without p-spray With/without field-plate p-stop doping levels Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS05 p-type Sensors p-type wafers Sensors 4-inch wafer for cost reason MCZ: ~900 Ωcm Orientation (100) FZ: ~6k Ωcm Orientation (111) Sensors Miniature: 1cm x 1cm Large: ((~1cm x ~6cm) x6 zones) Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS06 p-type Sensors 6 inch (150 mm) wafer FZ-1 (100), FZ-2 (100), MCZ Further R&D of isolation structures No DC-field plate Width of (common) p-stop p-stop/p-spray doping variations Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS06 p-type Sensors Many miniature (1cm x 1cm) sensors One sensor per one "Zone" Large (3cm x 6 cm) sensors with 2 striplets Variation of Polysilicon bias resistor connections Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS07 p-type Sensors 6-inch (150 mm) wafer Maximum size sensor (~10 cm x ~10 cm) prototyping R&D's Candidate isolation structures "Punch-thru Protection" structures Wide/Narrow metal effect Wide/Narrow pitch effect Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

ATLAS07 p-type Sensors Full size (9.75 cm x 9.75 cm) prototype sensors 4 segments: two "axial" and two "stereo" (inclined) strips Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Proton Irradiation at CYRIC KEK 70 MeV protons Beamline 32 Beamline 31-2 Facility associated with Univ. Tohoku, Sendai, Japan Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Proton irradiations at CYRIC AVF Cyclotron at Tohoku University Beam energy: 70 MeV Beam intensity: 10nA ~ 800nA Beam spot size: ~5 mm FWHM ~4 min. for 1x1015 at 800 nA Irradiation history Beamline 31-2 2005.10.17 - 1st and beamline study ATLAS05 - up to 5x1015 2006.01.27 +2006.03.14 +2006.06.26 + 2006.10.16 ATLAS06 - up to 2x1015 2007.05.18, Beamline 32 2007.08.28 ATLAS07 - up to 1x1015 2008.03.11 Change of beamline Machine time/user conflict in 31 Straight, simpler line in 32 Beamline 31-2 Beamline 32 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Laser for FDV and CCE Full Depletion Voltages (FDV) C-V method Laser method Charge Collection Efficiencies (CCE) Reference sensor Pulsed laser (1064nm) focused to 4um x 4um Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Full Depletion Voltages ATLAS05 CCE CV ATLAS06 CCE Very different fluence development in 4 inch and 6 inch!! All p-type 4 inch FZ (111), though FZ and MCZ are similar in 6 inch!! except below ~2x1014 , no advantage in MCZ FDV~500V!! at 1x1015 Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

CCE ATLAS06 ATLAS05 Charge loss up to 1x1015 is small not fully depleted VB=1kV Charge loss up to 1x1015 is small 2x1015 appreciably less No obvious difference is FZ and MCZ Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Microdischarge ATLAS06 Onset voltage (VMD) >600 V in FZ some trouble in MCZ Zone5 exceptional After irradiation (>1x1014) >1000 V!! Even Zone5 and MCZ Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

N-strip Isolations + p-spray Showing Vbias voltages to achieve isolation Isolation gets worse as fluence accumulates Number of observations can be seen from the plots.... Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

TCAD Simulations N-P gap was too narrow Potential of 2nd p-stops makes effective p-stop width as wide up to 2nd p-stop Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008

Summary n-in-p p-type microstrip sensors have been fabricated in p-FZ and p-MCZ wafers, for several years by now Proton irradiations, 70 MeV, are being routinely carried out at CYRIC of Tohoku Univ., Fluence development of full depletion voltage (FDV) of 4-inch (100 mm) and 6-inch (150 mm) is very different In 6-inch, FDV is ~500 V at 1x1015 neq/cm2 CCE is near full up to 1x1015 neq/cm2 Onset voltage of the microdischarge has been achieved to be >600 V in general Number of isolation structures are being investigated and we are narrowing the candidates A full size microstrip sensor has been prototyped and we have the first look in hand Y.Unno, 3rd Workshop on Advanced Silicon Radiation Detectors, Barcelona, Spain, 14-16 April. 2008