Cypress Introduces the Industry’s First 4Mb Serial F-RAM Quick Presentation: 4Mb Serial F-RAM™ Cypress Introduces the Industry’s First 4Mb Serial F-RAM 4Mb Serial F-RAM Quick Presentation

4Mb Serial F-RAM Quick Presentation Cypress Is the NVRAM Market Leader Cypress offers the largest portfolio of serial and parallel NVRAM products F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs   Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance1 F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages F-RAM products offer optional real-time clocks and event counters Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products 25 ns access times are available with unlimited Write Endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage Asynchronous x8, x16, x32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages Integrated real-time clocks are also available on nvSRAM products Cypress: Was the first to produce F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Provides products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times an NVM cell can be rewritten before it wears out 4Mb Serial F-RAM Quick Presentation 3b

Cypress 4Mb Serial NVRAM vs. Competition’s Feature F-RAM CY15B104Q F-RAM MB85RS2MT1 MRAM MR20H40 EEPROM M95M022 Density 4Mb 2Mb SPI Speed 40 MHz 25 MHz 50 MHz 5 MHz Sleep Mode Current 8 µA 10 µA 40 µA N/A Soak Time 0 ms 10 ms Endurance (Cycles) 1014 1013 Unlimited 1.2 x 106 Lifetime @ 10-ms Write Frequency3 31,710 years 3,171 years 208 minutes Active Write Current4 0.6 mA 2.2 mA 27.1 mA 3 mA Nonvolatile Retention 100 years 10 years 20 years 200 years Magnetic Damage Risk No Yes5 1 2Mb Fujitsu serial F-RAM; Fujitsu does not offer 4Mb serial F-RAM 2 2Mb ST serial EEPROM; ST does not offer 4Mb serial EEPROM 3 Comparable write frequency limited by EEPROM’s Soak Time 4 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, -40°C to +85°C 5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 4Mb Serial F-RAM Quick Presentation 7

F-RAM Portfolio Low Power | High Endurance SPI F-RAM I2C F-RAM Processor Companion Wireless Memory Parallel F-RAM FM25H20/V20 2Mb; H20: 2.7-3.6 V V20: 2.0-3.6 V 40 MHz SPI; Ind1 NEW CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind1 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind1 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E3 NEW FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind1 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind1 FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind1 512Kb - 8Mb FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A2 NEW CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A2 NEW FM25V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind1, Auto A2 FM24V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 3.4 MHz I2C; Ind1, Auto A2 FM33256 256Kb; 3.3V; 16 MHz SPI Ind1; RTC4; Power Fail Watchdog; Counter Wireless Memory NDA Required Contact Sales FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind1 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind1, Auto A2 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind1, Auto A2 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHz I2C; Ind1; RTC4; Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind1 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind1, Auto E3 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHz I2C; Ind1; RTC4; Power Fail; Watchdog; Counter 4Kb - 256Kb FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind1, Auto E3 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind1 1 Industrial grade −40ºC to +85ºC 2 AEC-Q100 −40ºC to +85ºC 3 AEC-Q100 −40ºC to +125ºC 4 Real-time clock Production Development QQYY Availability Sampling Concept Status 10a

4Mb Serial F-RAM Quick Presentation 4Mb SPI Serial F-RAM Applications Block Diagram Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters 4Mb SPI Serial F-RAM Control Logic 4 Control F-RAM Array Instruction Register Features 40-MHz SPI interface 100-trillion read/write cycle endurance Operating voltage range: 2.0-3.6 V Low (8-µA) sleep current 100-year data retention Industrial temperature operation Packages: 8-pin TDFN, 8-pin SOIC Address Register Serial Input Data I/O Register Serial Output Status Register Collateral Availability Preliminary Datasheet: Contact Sales Sampling: Q2 2015 Production: Q4 2015 4Mb Serial F-RAM Quick Presentation 11

Here’s How to Get Started Download the SPI Guide for F-RAM Register to access online technical support: www.cypress.com Request a preliminary datasheet: Contact Sales Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh Motor Control by SEW 4Mb Serial F-RAM Quick Presentation 12