Testsystems PXD6 - testing plans overview - by Jelena NINKOVIC Hybrid Boards for PXD6 - by Christian KOFFMANE Source measurements on DEPFET matrices using.

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Presentation transcript:

Testsystems PXD6 - testing plans overview - by Jelena NINKOVIC Hybrid Boards for PXD6 - by Christian KOFFMANE Source measurements on DEPFET matrices using DCD2 readout - by Manuel KOCH Testbeam/Lab DAQ for DCDB readout – by Sergey FURLETOV Measuring DEPFET matrices: ASTEROID readout ASIC and VAKDAQ system - by Sven Herrmann Minimatrix setup - by Jan SCHEIRICH 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

PXD6 - testing plans What do we want to learn from PXD6? Wafer level testing Dynamic testing

What do we want to learn from PXD6 ? Back side contact or punch trough via front side Select preferred design Yield Homogeneity over matrix Signal height (CCE, gQ etc. ) Voltage operation window Clear scheme (CCG or CCCG) Bump bonding Compatibility of the technologies 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Wafer summary First wafers ready Sep 2010 8 (6+2) SOI wafers + 2 reference wafers 2SOI + 2 Ref in the first iteration half-modules 768x120-160 pixels bump bonded, 4 different design options (2 inner modules, 2 outer modules) 128x16 matrices for bump-bonding same design options as for the big chips (2 of each) 128x16 matrices for wire bonding 128x8 matrices for wire bonding 85 standard 8 of them on thin oxide 6 ILC (128x128) 2 of them on thin oxide – (2 best DUTs from TB2009) Mini matrices (9 of which 2 on thin oxide) single DEPFETs (24 pairs with varied channel and clear gate geometry) Special test structures First wafers ready Sep 2010 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Pre testing after front side processing Wafer level measurements Goal: punch through biasing  define complexity of back side processing M1-M2 yield Planed for July 2010 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Testing plans Static measurements - Wafer level measurements: Special test devices – qualification of the production quality Leakage currents Depletion voltage Threshold voltage of DEPFET Threshold voltage of Clear Break down voltages of oxides : Poly 1 to Poly 2 and Al 1 and Al 2 Contact resistance Sheet resistance Matrices pretesting – selection of matrices for further testing Leakage current of the back diode Clear vs. Source Gate vs. Source Clear Gate vs. Gate Some representative sample of IV curves Planned for end September/October 2010 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Testing systems status Wafer level Semiautomatic wafer probing is planned (1-2 weeks /wafer) SUSS PA150 Semiautomatic Probe System Existing system I/V,C/V – wafer level on diodes and matrices 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Wafer map 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Wafer map 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Wafer map 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Second PA system – making of a clone Used PA200 Refurbishment/ upgrade - ordered Measurement system order - ongoing Backup system for the PXD6 testing Cu line testing 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Testing plans Dynamic measurements – Bonded structures Functionality of the matrices (laser and source measurements) Gain Noise Homogeneity Read-out schemes … 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Dynamic tests Milestones: 1. Testing of DCDB/DCDRO fine New hybrid New firmware for FPGA board New DAQ system 2. PXD6 production Test the system using PXD5 matrices (Christian’s talk!) Labtest DCDB read out system for PXD6 BelleII and ILC type matrices 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Bonded structures : Dynamic measurements 128 channel : Working S3B System can be used for ILC type matrices (CURO & SW3) New read out system based on DCD & Switcher B (DCDB & DCDRO & SWB ) for Belle and ILC matrices (only smaller part of the ILC type matrix) 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Bonded structures : Dynamic measurements All Si Module: Bump bonding of chips to the matrix 2 batches – DCDB & DCDRO  FPGA DCDB & DHP  new FPGA Alternative : testing on the probe station with probe card contacts and an external switcher pro : fast testing of yield non dependant on bump bonding experience for final production con : high cost probe card specific for the layout probably we can not contact all pads in a single touch down Hybrid Board 5x SWB 3 x DCD-B DHP 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Bonded structures : Dynamic measurements Mini matrices: 4 structures on 5x5 mm2 chip different channel length same other geometry System ready Single pixel setup 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Time schedule for the test system with DCDB/DCDRO ??? SWB is back  testing  adapter boards are needed –> July 2010 DCDB/DCDRO  waiting for hybrid Hybrid for DCDB/DCDRO ready till mid Jun 2010 Firmware and DAQ changes Jun 2010 PXD5 matrix - debugging and testing of the system September /October preparations/changes for PXD6 matrix 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

1 month from the production end till first hybrid test!!! Time schedule PXD6 First wafer tests in July or August – before backside processing punch trough biasing yield of double metal process Full wafer tests by end September/October – fully processed wafers 2 weeks 1-2 weeks wafer Clean room Diced wafer static measurements wafer cutting Bonding 1week 1 month from the production end till first hybrid test!!! First test hybrid 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Dynamic tests Milestones: 1. Testing of DCDB/DCDRO PROBLEMS Use S3Bsystem for PXD6 New hybrid with SWB Modification of FPGA 2. PXD6 production Use reference thick wafers to have higher signal Thin wafers with CURO still fine but at the limit Labtest S3B read out system for PXD6 BelleII and ILC type matrices 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor

Modular Hybrid Concept All-Silicon Module & Bump Bond Matrix Hybrid Board 5x SWB 3 x DCD-B DHP To measure the signals of SWB and inject currents for testing DCD-B/DCDRO Pin Header Connectors Debug Board Matrix Board PXD6 SWB Matrix Board DCD-B/DCDRO FPGA Board Hybrid Board Power SAMTEC ST/SS connector series High pin count, Low profile 3mm ST4-50-3.00-L-D-P-TR SS4-50-3.00-L-D-K-TR 4th International Workshop on DEPFET Detectors and Applications (May 2-5, 2010, Ringberg Castle, Germany) Jelena Ninkovic, MPI Halbleiterlabor