EOS Elettronica Organica per Strumentazione Innovativa di Ricerca.

Slides:



Advertisements
Similar presentations
MICROWAVE FET Microwave FET : operates in the microwave frequencies
Advertisements

Slides based on Kewal Saluja
Derek Wright Monday, March 7th, 2005
Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.
Chun-Chieh Lu Carbon-based devices on flexible substrate 1.
SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Power MOSFETs SD Lab. SOGANG Univ. Doohyung Cho.
Crystallization of Perylene Diimides for Organic Field Effect Transistors Bristee Das October 3, 2014.
Solution processible Inorganic Nanocrystal based Thin-film Transistor Hongki Kang EE235 April
Nanoscale molecular- switch crossbar circuits Group 2 J. R. Edwards Pierre Emelie Mike Logue Zhuang Wu.
Outline Introduction – “Is there a limit?”
Fig 10: I-V characteristics of Au/PDNC/Al/Au junction. This shows that the molecule has rectification towards the positive bias. Current (A) M I A M I.
ECE/ChE 4752: Microelectronics Processing Laboratory
An Introduction to SIMS and the MiniSIMS ToF © Millbrook Instruments Limited Blackburn, UK
An Introduction to SIMS and the MiniSIMS alpha
VFET – A Transistor Structure for Amorphous semiconductors Michael Greenman, Ariel Ben-Sasson, Nir Tessler Sara and Moshe Zisapel Nano-Electronic Center,
Microcantilevers III Cantilever based sensors: 1 The cantilever based sensors can be classified into three groups (i)General detection of any short range.
Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.
Basic MOSFET I-V characteristic(1/3) High circuit operation speed  large I ON small Subthreshold Slope (SS) Low power consumption  small I OFF (Silicon-on-insulator.
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE122 – Lab 7 MOSFET Parameters.
Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First-Time User Guide to MOSFET.
Influence of carrier mobility and interface trap states on the transfer characteristics of organic thin film transistors. INFM A. Bolognesi, A. Di Carlo.
Application of Silicon-Germanium in the Fabrication of Ultra-shallow Extension Junctions of Sub-100 nm PMOSFETs P. Ranade, H. Takeuchi, W.-H. Lee, V. Subramanian,
Ferroelectric Nanolithography Extended to Flexible Substrates Dawn A. Bonnell, University of Pennsylvania, DMR Recent advances in materials synthesis.
HO #3: ELEN Review MOS TransistorsPage 1S. Saha Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended.
Electronic transport through Single Organic Crystals
PAIS-2001 “TRANS” Organic Transistors: design, fabrication and characterization.
Questions/Problems on SEM microcharacterization Explain why Field Emission Gun (FEG) SEM is preferred in SEM? How is a contrast generated in an SEM? What.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.
UTB SOI for LER/RDF EECS Min Hee Cho. Outline  Introduction  LER (Line Edge Roughness)  RDF (Random Dopant Fluctuation)  Variation  Solution – UTB.
Chieh Chang EE 235 – Presentation IMarch 20, 2007 Nanoimprint Lithography for Hybrid Plastic Electronics Michael C. McAlpine, Robin S. Friedman, and Charles.
Ali Javey, SungWoo Nam, Robin S.Friedman, Hao Yan, and Charles M. Lieber Ting-Ta Yen.
1 SIMS Characterization of Impurity Elements in Nb: The Effect of Heat Treatments ncsu.edu/aif jlab.org 1 P. Maheshwari, F. Stevie, D. Griffis, M. Rigsbee.
The Devices: MOS Transistor
Chapter 6 The Field Effect Transistor
Power MOSFET Pranjal Barman.
Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges
Corrosion resistant ALD coatings
Circuit characterization and Performance Estimation
MOS Field-Effect Transistors (MOSFETs)
Recall Last Lecture Common collector Voltage gain and Current gain
M. Mahdouani a, W. Boukhili a, C. Tozlu b, R. Bourguigaa
DMT 241 – Introduction to IC Layout
VLSI design Short channel Effects in Deep Submicron CMOS
Kai Nia, Enxia Zhanga, Ronald D. Schrimpfa,
Lecture 22 OUTLINE The MOSFET (cont’d) MOSFET scaling
Intro to Semiconductors and p-n junction devices
6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.
VLSI Design MOSFET Scaling and CMOS Latch Up
EE141 Chapter 3 VLSI Design The Devices March 28, 2003.
Nanowire Gate-All-Around (GAA) FETs
Lecture 22 OUTLINE The MOSFET (cont’d) Velocity saturation
Lecture 16 ANNOUNCEMENTS OUTLINE MOS capacitor (cont’d)
Lecture 19 OUTLINE The MOSFET: Structure and operation
Optional Reading: Pierret 4; Hu 3
Qualitative Discussion of MOS Transistors
Reading: Finish Chapter 19.2
Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:
Chapter 9: Short channel effects and
Paper introduction Yuna Kim
Lecture 22 OUTLINE The MOSFET (cont’d) MOSFET scaling
Parasitic resistance in MOSFETs
Lecture 19 OUTLINE The MOS Capacitor (cont’d) The MOSFET:
Lecture 22 OUTLINE The MOSFET (cont’d) Velocity saturation
Device Engineering Team
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Beyond Si MOSFETs Part IV.
Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride by Daowei He, Jingsi Qiao, Linglong Zhang,
Beyond Si MOSFETs Part 1.
Chapter 4 Field-Effect Transistors
Presentation transcript:

EOS Elettronica Organica per Strumentazione Innovativa di Ricerca

Outline Introduction PDIF-CN2: n-type behaviour and good properties Flexible n-type and p-type OTFTs Performances & Reliability Circuit Simulations Conclusions

Introduction Reliable Organic CMOS Circuits requires p- and n-type devices with: Comparable performances Stability of electrical characteristics Exploitation in flexible electronics: Plastic substrates (devices must keep high performances) P-type devices (developed, evaporated and solution-processed semiconductors, stability) N-type devices (development of evaporated materials, perylene-diimide based) PDIF-CN2 interesting performances: High crystalline films mobility (up to 6cm2/Vs) Transistor models: DC model (developed) AC model (under testing) Transient model (under testing)

Fabrication p-type channel PEN (100μm) Cytop P-type developed transitor (100 um channel length) First batch of transistors Al-Gate Cytop The molecule for p-type is under patent agreement!! © SAM channel SAM Source-Au Drain - Au PEN (100μm) Transistor architecture

Fabrication n-type Au S/D contact HMDS treatment before perylene-diimide evaporation to increase chemical stability No patent on this tipology! PEN flexible substrate Bottom-Contact/Top-Gate Au- S/D contacts, no SAM PDIF-CN2 evaporated (SPIN) (Tsub=100 °C) Gate dielectric: Cytop (550nm) Metal gate: Al Source-Au Al-Gate Drain - Au PDIF-CN2 channel Cytop PEN (100μm)

ToF-SIMS Time of Flight Secondary Ions Mass Spectrometry Ion gun Elements (ppm/ppb) Information obtained Detection of all elements and isotopes(1 – 12000 uma) Chemical information via molecular and cluster ions Detection Limits ppm of a monolayer for elements sub-fmol for molecules Spatial Location high lateral resolution (< 60 nm) high surface sensitivity (< 1 nm) high depth resolution (< 1 nm) Mass resolution 10.000 Bi+ Molecules (sub-fmol) Bi3+

ToF-SIMS – Spectra and Imaging PDIF-CN2 is homogeneously distributed. PDIF-CN2 molecular peak is present.

ToF-SIMS – Depth Profiling 29 nm

TFTs On Bare PEN Substrates Electrical Characteristics L=100 μm W=245 μm Long Channel High Ioff Good Linearity L=10 μm W=230 μm Short Channel High Ioff Contact Effects

Sample N03 HMDS treatment before PDIF-CN2 evaporation TFTs On HMDS-treated Substrates Electrical Characteristics Sample N03 HMDS treatment before PDIF-CN2 evaporation Higher mFE More negative Vth Lower Sub-Threshold Slope Higher Ion/off Still Good Linearity when channel length is scaled down

Gate-bias Stress on bare and HMDS-treated substrate devices Electrical Stability Gate-bias Stress on bare and HMDS-treated substrate devices Vgs-stress=+30V Bare Substrate Comments: Both TFTs on bare substrate and HMDS-treated substrate show very good stability with only small variation of the transfer characteristics HMDS-treated Substrate

P-type experimental characterization

P-type model

NOT in PMOS technology Standar NOT design It could be a PMOS active load

Dedicated NOT design EOS NOT design

Simulation In INV 1 INV 2 INV 3

OR Port with pass transistor approach W=120u L=5u W=120u L=5u W=10u L=100u W=10u L=100u W=10u L=100u W=10u L=100u W=10u L=100u W=10u L=100u

Conclusions N-type OTFT was analyzed with TOF-SIMS technic to improve processes and performances P-type OTFT was modelized and different logic port solutions was tested At the moment p-type OTFT circuits are under production at CNR-IMM (Rome)

Thank you!!!

Contact Resistance Contact resistance by TLM-method Rc: influence of contact resistance on characteristics of devices with different L Deviation from linear behavior Bare HMDS TLM method In both bare and HMDS-treated substrates, devices show contact resistance Rc of the same order (30 kW*cm) No SAM treatment of S/D contacts has been performed HMDS-treatment can improve the interface between PEN and PDIF-CN2 but it does not induce any improvement on contact characteristics

Chemical side ongoing OTFTs on Flexible Substrate: N-type OTFTs with evaporated PDIF-CN2 active layer have been fabricated on bare and HMDS-treated PEN substrates Devices show good performances and stability Effects of HMDS-treatment on PEN substrate: Improvement of morphological properties of evaporated PDIF-CN2 Devices made on treated-PEN show better performances with higher mFE and lower SS Rc keep the same order in the two cases Reliability: Both devices show good stability after prolonged bias stress with smaller variations of the curves at high Vgs Good stability is due to the top-gate structure and hydrophobic properties of fluoropolymer acting as gate dielectric, preventing by water/gas diffusion Future work: Future efforts will be devoted to minimize the contact resistance effects through proper functionalization of the S/D electrodes (use of SAM)