Topic: 2016졸업논문 - 소스 및 드레인 전극 재료에 따른 비정질 InGaZnO 박막 트랜지스터의 소자열화 졸업작품 계획서(논문) Topic: 2016졸업논문 - 소스 및 드레인 전극 재료에 따른 비정질 InGaZnO 박막 트랜지스터의 소자열화 지도교수: 박종태 교수 Team project: 201001206 이규연(010-7573-5333) 201001207 이기훈(010-7456-9935) 201101163 강태곤 (010-9183-5376)

Team Organization Team Name Members Area/Topic LEE Kyu yeon, G1(SEMDEL’s Men) LEE Kyu yeon, KANG Taegon, LEE Kihoon (3) Area : Semiconductor Topic : Degradation of the amorphous IGZO thin film transistor according to the Hot electron. What is the team name mean? -SEMDEL`s Men is abbreviation of The Semiconductor Device Lab and means the Laboratory`s Men. As IGZO TFTs is Indium, Gallium, Zinc, compound semiconductor Oxide is under spotlights in a display area. It is because it is possible to create a high resolution than conventional silicon. Our lab is primarily assess the reliability and performance characteristics of the device. Our team will evaluate the performance and reliability through the analysis of the degradation phenomenon by Hot Electron.

Background/Motivation In a electronic industry, The study of a display device that can process large volume of information is more quickly and accurately focused. TFT LCD that is Representative technique of the current has low electric mobility because it is not uniform the arrangement of the molecules. Movement of electron is also has more of an effect on the power consumption of the product. Unlike the TFT LCD with such a problem, a-IGZO TFT has good power consumption due to high mobility. In addition, The process is simple and LCD lines that can utilize existing LCD`s line would cost relatively little investment. We are going to contribute to create high reliability transistor through research to the characteristic, performance, relabililty analysis of the a-IGZO TFT.

Design Goal and Problem Definition Design Goal : Measuring the a-IGZO TFTs and compares the simulation analysis result to extract the correct performance, characteristics and the reliability data. In accordance with the direction of improvement and research. Problem Definition : Recently an innovative material that can replace silicon materials most commonly used in liquid crystal displays, such as mobile phones, tablets and notebook. But it is not commercialized yet been made, it lacks papers and materials to compare the analysis results. The transistor is not easy to manage sensitive air, vibration, and heat. The optimized measurement environment should be provided.

Solution Approach to the Problem The source and drain regions consists of a metal(NI, Ti, Al, ITO). We are going to measure the amorphous IGZO TFTs by metal. And then we will Analyzed and compared by the measured data and extracts the performance and reliability. Most of all, Hot carrier effects is an important factor. So our team will have measured the hot carrier effects of the respective elements Measuring methods are : 1. the absence of light at room temperature (give the stress for 1 hour. Gate & Drain voltage: 15V) 2. Depending on the temperature change in the no-light conditions. (ex: 50°, 70° ,90°) 3. When the light at room temperature By comparing the characteristics of the device based on the above conditions to extract the transistor having the highest reliability, and to study the improved method in accordance with the change of the characteristics. Temperature Condition Light Condition 1 Room Temperature None Condition 2 Example-50°, 70° ,90° Condition 3 On

Team Activity Structure and Required Activity for the Solution LEE Kihoon LEE Kyuyeon KANG Taegon -Create PPT -Measuring devices -Analysis devices Data Sheet -Arrange simulation files -Measurement equipment management and preparation -Device management -Research investigation and review -Measuring equipment Cleaning -Measurement data analysis -Origin program data arrangement

Expected Result/Output -To see the extent to degradation of the transistor will be the variable measures the light, temperature. Degradation as the temperature is increased and the presence of light is likely to get worse. Here, it is important to find out if the degradation progress in the some temperature.

Team Resources and Time Line LEE Kihoon -Ni with experiment -Hot carrier (no light, room tempearture) -Origin program drive LEE Kyuyeon -Ti with experiment -Hot carrier (no light, temperature change) -Origin program drive KANG Taegon -Al, ITO with experiment -Hot carrier (light, room tempearture) -Origin program drive